Marko Tadjer
Naval Research Laboratory
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May 01, 2019 // 2:20pm – 2:40pm
9.3 Process Development Enabling Lateral GaN JFET Devices for Robust Power Switching on 200 mm Engineered Substrates
Marko Tadjer, Naval Research LaboratoryVladimir Odnoblyudov, QROMIS, USA -
13.1 High Aspect Ratio Vias in Silicon Carbide Etched by Inductively-Coupled Plasma
Marko Tadjer, Naval Research LaboratoryLunet Luna, U.S. Naval Research LaboratoryEugene Imhoff, Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryFritz Kub, Naval Research Laboratory -
18.2 Engineering PECVD SiN Passivation Layers to Enable AlGaN/GaN HEMTs with Low Leakage, Low Current Collapse and High Breakdown Voltage
Andrew Koehler, Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryMarko Tadjer, Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryFritz Kub, Naval Research Laboratory -
18.3 Threshold Voltage Control by Tuning Charge in ZrO2 Gate Dielectrics for Normally-off AlGaN/GaN MOS-HEMTs
Travis Anderson, Naval Research LaboratoryVirginia Wheeler, U.S. Naval Research LaboratoryDavid Shahin, University of MarylandMarko Tadjer, Naval Research LaboratoryLunet Luna, U.S. Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryFrancis Kub, U.S. Naval Research LaboratoryCharles Eddy, US Naval Research LaboratoryJr., Naval Research Laboratory -
20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems
David Shahin, University of MarylandTravis Anderson, Naval Research LaboratoryVirginia Wheeler, U.S. Naval Research LaboratoryMarko Tadjer, Naval Research LaboratoryLunet Luna, U.S. Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryCharles Eddy, US Naval Research LaboratoryJr., Naval Research LaboratoryFritz Kub, Naval Research LaboratoryAris Christou, University of Maryland-College Park -
5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors
Marko Tadjer, Naval Research LaboratoryPeter Raad, TMX Scientific and Southern Methodist UniversityTatyana Feygelson, Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryBradford Pate, Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryFritz Kub, Naval Research Laboratory -
10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs
David Shahin, University of MarylandTravis Anderson, Naval Research LaboratoryJordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryVirginia Wheeler, U.S. Naval Research LaboratoryMarko Tadjer, Naval Research LaboratoryTatyana Feygelson, Naval Research LaboratoryBradford Pate, Naval Research LaboratoryJennifer Hite, U.S. Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryCharles Eddy, US Naval Research LaboratoryJr., Naval Research LaboratoryFrancis Kub, U.S. Naval Research LaboratoryAris Christou, University of Maryland-College Park -
11.2 Effect of Surface Passivation on Current Collapse of Proton-Irradiated AlGaN/GaN HEMTs
Andrew Koehler, Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryMarko Tadjer, Naval Research LaboratoryBradley Weaver, U.S. Naval Research LaboratoryJordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research LaboratoryDavid Shahin, University of MarylandKarl Hobart, Naval Research LaboratoryFrancis Kub, U.S. Naval Research Laboratory -
11.5 Optimization of AlGaN/GaN HEMT SiN Passivation by Mixed Frequency PECVD
Marko Tadjer, Naval Research LaboratoryAndrew Koehler, Naval Research LaboratoryCharles Eddy, US Naval Research LaboratoryJr., Naval Research LaboratoryTravis Anderson, Naval Research LaboratoryKarl Hobart, Naval Research LaboratoryFritz Kub, Naval Research Laboratory