Alan Jacobs

U.S. Naval Research Laboratory
  • May 01, 2019 // 5:20pm – 5:40pm

    12.5 Activation of Ion Implanted Si in Semi-Insulating C-Doped GaN by High Pressure Annealing for Photoconductive Semiconductor Switch (PCSS) Applications

    Alan Jacobs, U.S. Naval Research Laboratory
    Boris Feigelson, Naval Research Laboratory
    Download Paper

  • 9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes

    Alan Jacobs, U.S. Naval Research Laboratory
    Mona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research Laboratory
    James Gallagher, U.S. Naval Research Laboratory
    Marko J. Tadjer, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Jennifer K. Hite, Naval Research Laboratory
    N. Mahadik, U.S. Naval Research Laboratory
    Robert Kaplar, Sandia National Labs, Albuquerque, NM
    O. Aktas, Sandia National Labs, Albuquerque, NM

    9.4.2023_Anderson

  • 10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes

    James Gallagher, U.S. Naval Research Laboratory
    Michael A. Mastro, U.S. Naval Research Laboratory
    Mona Ebrish, Vanderbilt University, Nashville, TN
    Alan Jacobs, U.S. Naval Research Laboratory
    Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
    Robert Kaplar, Sandia National Labs, Albuquerque, NM

    10.5.2023_Gallagher

  • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

    Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Tatyana Feygelson, U. S. Naval Research Laboratory
    Joseph Spencer, U.S. Naval Research Laboratory
    Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
    Jennifer K. Hite, Naval Research Laboratory
    Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
    Alan Jacobs, U.S. Naval Research Laboratory
    Boris Feygelson, U.S. Naval Research Laboratory
    Kohei Sasaki, Novel Crystal Technology
    Akito Kuramata, Novel Crystal Technology, Inc
    Pai-Ying Liao, Purdue University
    Peide D. Ye, Purdue University
    Bradford Pate, Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory
    Marko J. Tadjer, U.S. Naval Research Laboratory

    11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm

  • 15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices

    Alan Jacobs, U.S. Naval Research Laboratory
    Boris N. Feigelson, Naval Research Laboratory
    Jennifer Hite, U.S. Naval Research Laboratory
    Joseph Spencer, U.S. Naval Research Laboratory
    Marko Tadjer, U.S. Naval Research Laboratory
    Daniel G. Georgiev, University of Toledo, Toledo OH
    Raghav Khanna, University of Toledo, Toledo OH
    Marko J. Tadjer, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory

    15.5.2023 Alan Jacobs CS Mantech ExtAbstract_submission2

  • 2.1.3.2024 Experimentally Validated Innovative Edge Termination for Vertical GaN Diodes

    Alan Jacobs, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Daniel G. Georgiev, University of Toledo, Toledo OH
    Andrew Koehler, U. S. Naval Research Laboratory
    Raghav Khanna, University of Toledo, Toledo OH
    Marko J. Tadjer, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory

    2.1.3.2024

  • 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments

    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Alan Jacobs, U.S. Naval Research Laboratory
    Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
    Joseph Spencer, U.S. Naval Research Laboratory
    Geoffrey M. Foster, U.S. Naval Research Laboratory
    Andrew Koehler, U. S. Naval Research Laboratory
    Vladimir Odnoblyudov, Qromis, Inc.
    Marko J. Tadjer, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory

    8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors

  • 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction

    Daniel Francis, Akash Systems, San Francisco, CA, USA
    Sai Charan Vanjari, University of Bristol
    Xiaoyang Ji, University of Bristol
    Tatyana Feygelson, U. S. Naval Research Laboratory
    Joseph Spencer, U.S. Naval Research Laboratory
    Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
    Alan Jacobs, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Marko Tadjer, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Bradford Pate, Naval Research Laboratory
    James Pomeroy, University of Bristol
    Matthew Smith, University of Bristol
    Martin Kuball, University of Bristol
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  • 4B.4 – Double-Side Diamond Cooling of GaN HEMTs and Progress Towards Further Reductions in Junction-to-Package Thermal Resistance

    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    F. Vasquez, University of Connecticut
    A. J. Cruz Arzon, University of Connecticut
    T.I. Feygelson, U.S. Naval Research Laboratory, Washington DC
    Alan Jacobs, U.S. Naval Research Laboratory
    Andrew Koehler, U. S. Naval Research Laboratory
    B.B. Pate, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory
    M.A. Mastro, U.S. Naval Research Laboratory
    G. Pavlidis, University of Connecticut
    D. Francis
    M.J. Tadjer, U.S. Naval Research Laboratory

    4B.4 Final.2025

    Abstract
    Herein, we demonstrate top, bottom, and double-side thermal management strategies for gallium nitride (GaN) high electron mobility transistors (HEMTs). The cooling technologies investigated include GaN/SiC (reference), GaN/diamond (bottom-side), diamond/GaN/SiC (top-side), and diamond/GaN/diamond (double-side). We review processing methods to realize these device structures as well as the intricacies of the fabrication process. From DC output characteristics, the diamond/GaN/diamond HEMTs demonstrate over 0.6 A/mm at VGS = 2 V. From a thermal perspective, the double-side diamond cooling approach enabled operation at DC power densities of ~30 W/mm with a peak temperature rise of ~50 K at the drain-side edge of the gate electrode. Finally, we demonstrate our initial efforts towards diamond encasement of AlGaN/GaN epilayers to further reduce device-level thermal resistance.