Alan Jacobs
U.S. Naval Research Laboratory, Washington DC
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May 01, 2019 // 5:20pm – 5:40pm
12.5 Activation of Ion Implanted Si in Semi-Insulating C-Doped GaN by High Pressure Annealing for Photoconductive Semiconductor Switch (PCSS) Applications
Download PaperAlan Jacobs, U.S. Naval Research Laboratory, Washington DCBoris Feigelson, Naval Research Laboratory -
9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes
Alan Jacobs, U.S. Naval Research Laboratory, Washington DCMona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research LaboratoryJames Gallagher, U.S. Naval Research LaboratoryMarko J. Tadjer, U.S. Naval Research LaboratoryJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLJennifer K. Hite, Naval Research LaboratoryN. Mahadik, U.S. Naval Research LaboratoryRobert Kaplar, Sandia National Labs, Albuquerque, NMO. Aktas, Sandia National Labs, Albuquerque, NM -
10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes
James Gallagher, U.S. Naval Research LaboratoryMichael A. Mastro, U.S. Naval Research LaboratoryMona Ebrish, Vanderbilt University, Nashville, TNAlan Jacobs, U.S. Naval Research Laboratory, Washington DCBrendan. P. Gunning, Sandia National Labs, Albuquerque, NMRobert Kaplar, Sandia National Labs, Albuquerque, NM -
11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor
Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRLJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLTatyana Feygelson, Naval Research LaboratoryJoseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia TechTatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de MadridJennifer K. Hite, Naval Research LaboratoryDaniel Pennachio, U.S. Naval Research Laboratory, Washington DCAlan Jacobs, U.S. Naval Research Laboratory, Washington DCBoris Feygelson, U.S. Naval Research LaboratoryKohei Sasaki, Novel Crystal TechnologyAkito Kuramata, Novel Crystal Technology, IncPai-Ying Liao, Purdue UniversityPeide Ye, Purdue UniversityBradford Pate, Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research LaboratoryMarko J. Tadjer, U.S. Naval Research Laboratory -
15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices
Alan Jacobs, U.S. Naval Research Laboratory, Washington DCBoris N. Feigelson, Naval Research LaboratoryJennifer Hite, U.S. Naval Research LaboratoryJoseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia TechPrakash Pandey, University of Toledo, Toledo OHDaniel G. Georgiev, University of Toledo, Toledo OHRaghav Khanna, University of Toledo, Toledo OHMarko J. Tadjer, U.S. Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research Laboratory