GaN is a promising material for more efficient high frequency and high voltage power switching. However, GaN still is not the common material for power electronics due to immature substrate, homoepitaxial growth, and processing technology. Electroluminescence is a promising method to predict failure points due to high field stress, which can assist in the separation of inherent defects stemming from substrate quality, and from process-induced defects as well as identify problems related to proper edge termination design. In this work, we compare the Electroluminescence signatures of devices on inhomogeneous substrates to DC I-V behavior to demonstrate the utility of the technique for process monitoring.
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Exploring the capability of Hyperspectral Electroluminescence for process monitoring in vertical GaN devices
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13.1 High Aspect Ratio Vias in Silicon Carbide Etched by Inductively-Coupled Plasma
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16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates
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18.2 Engineering PECVD SiN Passivation Layers to Enable AlGaN/GaN HEMTs with Low Leakage, Low Current Collapse and High Breakdown Voltage
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18.3 Threshold Voltage Control by Tuning Charge in ZrO2 Gate Dielectrics for Normally-off AlGaN/GaN MOS-HEMTs
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20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems
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5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors
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9.1 Improvements in the Annealing of Ion Implanted III-Nitride Materials and Related Devices
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10b.4 Reliability Assessment of Thermally-Stable Gate Materials for AlGaN/GaN HEMTs
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11.2 Effect of Surface Passivation on Current Collapse of Proton-Irradiated AlGaN/GaN HEMTs
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11.5 Optimization of AlGaN/GaN HEMT SiN Passivation by Mixed Frequency PECVD
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8.3.2023 Heterogeneous Integration of Gallium Nitride HEMTs with Single Crystal Diamond Substrates via Micro-transfer Printing for Thermal Management
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9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN Diodes
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10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN Diodes
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11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor
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15.3.2023 Characterization of Nitridated Ga2O3 for GaN-on-Ga2O3 Power Device Applications
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15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices
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Formation of Diamond Superjunctions to Enable GaN-Based Super-Lattice Power Amplifiers with Diamond Enhanced Superjunctions (SPADES)
Download PaperThe super-lattice power amplifier with diamond enhanced superjunctions (SPADES) is a device that incorporates nanocrystalline diamond superjunctions into the super-lattice castellated field effect transistor (SLCFET), to improve breakdown voltage. A diamond superjunction is formed with p-type nanocrystalline diamond to balance mutual depletion between the two-dimensional electron gas superlattices and the doped diamond in order to reduce the peak electric field in the drain access region. Formation of the diamond superjunction presents several challenges, such as managing diamond conformality, strain, and control over p-type doping. Optimization of diamond growth led to conformal films, with low stress, and linear dependence hole concentration from p-type doping, suitable for the SPADES device.
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11.3.2023 Structural and Electrical Characterization of Schottky Barrier Diodes on 100 mm HVPE β-Ga2O3 Epiwafer Technology
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18.15.2023 Characterization of Optically Modulated Semi-Insulating GaN Photoconductive Semiconductor Switches
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14.9 Fabrication of True Vertical GaN Schottky Diodes from 150 mm Engineered Substrates
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8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments
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10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction
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