Huili-(Grace) , Xing

Cornell University
- May 11, 2022 // 11:10am
  
  8.2 How to Unleash Power of Ga2O3?
  
  Xing Huili-(Grace), Cornell University
  
  Wenshen Li, Cornell University
  
  Zongyang Hu, Cornell University
  
  Kazuki Nomoto, Cornell University
  
  Debdeep Jena, Cornell University
  
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Abdallah, Zeina

University of Bristol, Bristol, UK
- May 11, 2022 // 5:30pm
  
  12.4 Novel thermoreflectance-based method for in-situ die attach thermal conductivity assessment in packaged devices
  
  Zeina Abdallah, University of Bristol, Bristol, UK
  
  Nathawat Poopakdec, University of Bristol, Bristol, UK and Navaminda Kasatriyadhiraj Royal Air Force Academny
  
  Matin Kuball, University of Bristol, Bristol, UK,
  
  James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
  
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Ahmed, S.

University of Arkansas, Fayetteville
- May 12, 2022 // 2:50pm
  
  17.5 High-Temperature SiC Power Module with Integrated LTCC-Based Gate Driver
  
  P. Lai, University of Arkansas, Fayetteville
  
  S. Chinnaiyan, University of Arkansas, Fayetteville
  
  S. Ahmed, University of Arkansas, Fayetteville
  
  A. Mantooth, University of Arkansas, Fayetteville
  
  Z. Chen, University of Arkansas, Fayetteville
  
  D. Gonzalez, University of Arkansas, Fayetteville
  
  Student Presentation
  
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Aktas, O.

Sandia National Labs, Albuquerque, NM
- March 10, 2022 // 8:45am
  
  13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
  
  Cem Basceri, QROMIS, USA
  
  Vlad Odnoblyudov, QROMIS, USA
  
  O. Aktas, Sandia National Labs, Albuquerque, NM
  
  Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
  
  Karen Geens, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  D. Fahle, AIXTRON SE Germany
  
  Stefaan Decoutere, Imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  M. Heuken, AIXTRON SE Germany
  
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Allford, Craig

Cardiff University
- May 11, 2022 // 12:00pm
  
  7.4 Impact of Strain-Induced Bow on the Manufacture of VCSELs on 150mm GaAs- and Ge-Substrate Wafers
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Thomas Peach, Cardiff University
  
  Craig Allford, Cardiff University
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University. IQE plc
  
  Peter M. Smowton, Cardiff University, IQE plc
  
  Student Presentation
  
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Alt, B.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Amano, Hiroshi

Nagoya University
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Arkun, Erdem

HRL Laboratories, Malibu, CA,
- May 10, 2022 // 5:10pm
  
  4.4 Improving manufacturability of highly scaled RF GaN HEMTs
  
  Georges Siddiqi, HRL Laboratories
  
  Andrea Corrion, HRL Laboratories
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Michael Johnson, HRL Laboratories
  
  Dan Denninghoff, HRL Laboratories
  
  Joseph Nedy, HRL Laboratories
  
  Hannah Robinson, HRL Laboratories
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Haidang Tran, HRL Laboratories
  
  Quang Lam, HRL Laboratories
  
  Luis Fortin, HRL Laboratories
  
  Florian Herrault, HRL Laboratories
  
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- May 12, 2022 // 9:15am
  
  13.3 Highly-Linear and Efficient mm-Wave GaN HEMT Technology
  
  Jeong-Sun Moon, HRL Laboratories, Malibu, CA,
  
  Robert Grabar, HRL Laboratories, Malibu, CA,
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Joe Tai, HRL Laboratories, Malibu, CA,
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Patrick Fay, University of Notre Dame
  
  Joel Wong, HRL Laboratories, Malibu, CA,
  
  Didiel Vazquez-Morales, HRL Laboratories, Malibu, CA,
  
  Chuong Dao, HRL Laboratories, Malibu, CA,
  
  Shyam Bharadwaj, HRL Laboratories, Malibu, CA,
  
  Nivedhita Venkatesan, University of Notre Dame
  
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Asel, Thaddeus

Air Force Research Laboratory, Wright Patterson AFB, OH, USA
- May 12, 2022 // 2:30pm
  
  16.4 Delta Doping β-Ga2O3 Grown Via Plasma Assisted Molecular Beam Epitaxy Using Germanium
  
  Thaddeus Asel, Air Force Research Laboratory, Wright Patterson AFB, OH, USA
  
  Shin Mou, Air Force Research Laboratory, Wright Patterson AFB, OH
  
  Erich Steinbrunner, Air Force Research Laboratory, Wright Patterson AFB, OH, USA and Wright State University, Dayton, OH
  
  Jessica Hendricks, AFRL, Air Force Institute of Technology, Wright State University, Dayton, OH and Southwestern Ohio Council for Higher Education
  
  Adam T. Neal, Air Force Research Laboratory, Wright Patterson AFB, OH
  
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Ayari, T.

Yole Developpement, France
- May 10, 2022 // 12:00pm – 12:19pm
  
  1.6 Thrilling Compound Semiconductor Business Opportunities in China
  
  P. Chiu, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  T. Ayari, Yole Developpement, France
  
  C. Troadec, Yole Developpement, France
  
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- May 11, 2022 // 12:00pm
  
  8.4 Rise and Rise of SiC and GaN in Power Electronic Industry
  
  C. Troadec, Yole Developpement, France
  
  P. Chiu, Yole Developpement, France
  
  T. Ayari, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  R. Della-Giustina, Yole Developpement, France
  
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Baclet, Stephanie

Oxford Instruments Plasma Technology
- May 11, 2022 // 3:00pm
  
  9.4 Etching of GaAs/AlGaAs VCSEL Mesa for High Volume Production
  
  Katie Hore, Oxford Instruments Plasma Technology
  
  Ning Zhang, Oxford Instruments Plasma Technology
  
  Stephanie Baclet, Oxford Instruments Plasma Technology
  
  Ligang Deng, Oxford Instruments Plasma Technology
  
  David Hooper, Oxford Instruments
  
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Bahl, Sandeep

Texas Instruments, Inc.
- May 11, 2022 // 4:20pm
  
  11.1 Achieving Application-reliable GaN using a Standardized Approach
  
  Sandeep Bahl, Texas Instruments, Inc.
  
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Baker, Jack

Cardiff University
- May 11, 2022 // 12:00pm
  
  7.4 Impact of Strain-Induced Bow on the Manufacture of VCSELs on 150mm GaAs- and Ge-Substrate Wafers
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Thomas Peach, Cardiff University
  
  Craig Allford, Cardiff University
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University. IQE plc
  
  Peter M. Smowton, Cardiff University, IQE plc
  
  Student Presentation
  
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Baker, Troy

Eta Research
- May 12, 2022 // 3:20pm
  
  18.5 Warp of 4” Free-standing GaN Wafers
  
  Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
  
  Y. Yang, Global Communication Semiconductors, LLC
  
  Troy Baker, Eta Research
  
  Jinfeng Tang, Eta Research
  
  Yun Lai, Eta Research
  
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Bakeroot, Benoit

imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
- March 10, 2022 // 8:45am
  
  13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
  
  Cem Basceri, QROMIS, USA
  
  Vlad Odnoblyudov, QROMIS, USA
  
  O. Aktas, Sandia National Labs, Albuquerque, NM
  
  Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
  
  Karen Geens, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  D. Fahle, AIXTRON SE Germany
  
  Stefaan Decoutere, Imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  M. Heuken, AIXTRON SE Germany
  
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Bakhtiary Noodeh, Marzieh

Georgia Institute of Technology, Atlanta, GA
- May 12, 2022 // 3:20pm
  
  18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Ted Laurence, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
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Bartle, Dylan

Skyworks Solutions Inc.
- May 12, 2022 // 11:10am
  
  15.2 BiHEMT Idss Control for Yield Improvement
  
  Eric Finchem, MACOM
  
  Dylan Bartle, Skyworks Solutions Inc.
  
  Sam Mony, Skyworks Solution Inc.
  
  M. J. Miller, Skyworks Solutions Inc.
  
  S. Singh, Skyworks Solutions Inc.
  
  A. Chao, Skyworks Solutions Inc.
  
  A. Canlas, Skyworks Solutions Inc.
  
  E. Burke, Skyworks Solutions Inc.
  
  C. Munoz, Skyworks Solutions Inc.
  
  M. A. Zeeshan, Skyworks Solutions Inc.
  
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Basceri, Cem

QROMIS, USA
- March 10, 2022 // 8:45am
  
  13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
  
  Cem Basceri, QROMIS, USA
  
  Vlad Odnoblyudov, QROMIS, USA
  
  O. Aktas, Sandia National Labs, Albuquerque, NM
  
  Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
  
  Karen Geens, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  D. Fahle, AIXTRON SE Germany
  
  Stefaan Decoutere, Imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  M. Heuken, AIXTRON SE Germany
  
  Invited Presentation
  
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Beheshti, Mohammadsadegh

Skyworks Solutions Inc.
- May 12, 2022 // 3:20pm
  
  18.8 Solution-Phase Processed Zinc Oxide Vertical Schottky Diode using Flow-limited Field-Injection Electrostatic Spraying
  
  Samuel Mony, Skyworks Solutions, Inc.
  
  Jiang Li, Skyworks Solutions, Inc.
  
  Nercy Ebrahimi, Skyworks Solution Inc.
  
  Mohammadsadegh Beheshti, Skyworks Solutions Inc.
  
  Student Presentation
  
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- May 12, 2022 // 3:20pm
  
  18.9 Optimization in Noble Metal Hard Mask Selectivity in Chlorine-Based Plasma Etch
  
  Mohammadsadegh Beheshti, Skyworks Solutions Inc.
  
  Samuel Mony, Skyworks Solutions, Inc.
  
  Jiang Li, Skyworks Solutions, Inc.
  
  Nercy Ebrahimi, Skyworks Solution Inc.
  
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Bell, J.

Integra Technologies
- May 11, 2022 // 5:30pm
  
  11.4 1E7 Hours MTTF At 200°C Of 100V RF AlGaN/GaN-SiC HEMT Through ALT Characterization
  
  Gabriele Formicone, Integra Technologies, Inc.
  
  J. Bell, Integra Technologies
  
  D. Hou, Global Communication Semiconductors, LLC
  
  S. Wang, Global Communication Semiconductors, Inc.
  
  D. Wang, Global Communication Semiconductors, Inc.
  
  J. Burger, Integra Technologies
  
  W. Cheng, Integra Technologies
  
  W. Fan, Momentive Technologies
  
  J. McKay, Global Communications
  
  D. Mohata, Global Communications
  
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Benjamin, Mark

Lehighton Electronics Inc,
- May 19, 2022 // 1:50pm
  
  17.2 Top Surface Edge Contact for Wafer Level Electrical Characterization of 2DEG in AlGaN/GaN on Semi-insulating Wafers
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  Bret Schrayer, Semilab SDI, Tampa, FL,
  
  Mark Benjamin, Lehighton Electronics Inc,
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
  Marshall Wilson, Semilab SDI, Tampa, FL,
  
  D. Nguyen, Semilab LEI, Lehighton, PA
  
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Bharadwaj, Shyam

HRL Laboratories, Malibu, CA,
- May 12, 2022 // 9:15am
  
  13.3 Highly-Linear and Efficient mm-Wave GaN HEMT Technology
  
  Jeong-Sun Moon, HRL Laboratories, Malibu, CA,
  
  Robert Grabar, HRL Laboratories, Malibu, CA,
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Joe Tai, HRL Laboratories, Malibu, CA,
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Patrick Fay, University of Notre Dame
  
  Joel Wong, HRL Laboratories, Malibu, CA,
  
  Didiel Vazquez-Morales, HRL Laboratories, Malibu, CA,
  
  Chuong Dao, HRL Laboratories, Malibu, CA,
  
  Shyam Bharadwaj, HRL Laboratories, Malibu, CA,
  
  Nivedhita Venkatesan, University of Notre Dame
  
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Bi, F.

Akoustis Technologies
- May 11, 2022 // 1:40pm
  
  10.1 Single Crystal AlScN-on-Silicon XBAW RF Filter Technology for Wide Bandwidth, High Frequency 5G and WiFi Applications
  
  Jeffrey Shealy, Akoustis Technologies
  
  Pinal Patel, Akoustis Technologies
  
  Michael D Hodge, Akoustis Technologies
  
  Mary Winters, Akoustis Technologies
  
  C. Moe, Akoustis Technologies
  
  J. Leathersich, Akoustis Technologies
  
  F. Bi, Akoustis Technologies
  
  D. Kim, Akoustis Technologies
  
  A. Kochhar, Akoustis Technologies
  
  E. Mehdizadeh, Akoustis Technologies
  
  Invited Presentation
  
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Blevins, John

Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
- May 12, 2022 // 2:50pm
  
  16.5 Manufacturing Challenges of Czochralski Growth and Fabrication of 2-inch Semi-Insulating Beta Gallium Oxide Substrates
  
  John Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
  
  G. Foundos, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
  V, Gambin, Northrop-Grumman (AS), Redondo Beach, CA
  
  W. Everson, Penn State University, PA,
  
  C. Scott, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
  D. Synder, Penn State University
  
  A. Brady, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
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- May 12, 2022 // 1:20pm
  
  17.1 Manufacturing Expansion of COVID-19 Foam Testing Swabs
  
  John Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
  
  Scott Wellman, Puritan Medical Products, Guilford, ME
  
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Bolton, C.

SPTS, Newport, UK
- May 12, 2022 // 3:20pm
  
  18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs
  
  Kevin Riddell, SPTS, Newport, UK
  
  A. Croot, SPTS, Newport, UK
  
  C. Bolton, SPTS, Newport, UK
  
  B. Jones, Swansea University, Swansea, UK
  
  F. Monaghan, Swansea University, Swansea, UK
  
  J. Mitchell, Swansea University, Swansea, UK
  
  M. R. Jennings, Swansea University, Swansea, UK
  
  O. J. Guy, Swansea University, Swansea, UK
  
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Bonse, Mathias

Keysight Technologies, Inc.
- May 10, 2022 // 4:30pm
  
  5.2 GaAsSb/InP DHBT Extrinsic Base Regrowth Using In-situ Hydrogen Plasma Surface Treatment and Molecular Beam Epitaxy
  
  Barry Wu, Keysight Technologies, Inc.
  
  Martin Dvorak, Keysight Technologies, Inc.
  
  Forest Huang, Keysight Technologies, Inc.
  
  Scott LaFrancois, Keysight Technologies, Inc.
  
  Mathias Bonse, Keysight Technologies, Inc.
  
  Evan Lobisser, Keysight Technologies, Inc.
  
  Masaya Iwamoto, Keysight Technologies, Inc.
  
  Ben Zaks, Keysight Technologies, Inc.
  
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Bothwell, Bryan

Qorvo Biotechnologies
- May 11, 2022 // 2:10pm
  
  10.2 COVID-19 Testing- A New Era In Detection
  
  Bryan Bothwell, Qorvo Biotechnologies
  
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Bouhamri, Zine

Yole Développement
- March 11, 2022 // 10:40am
  
  7.1 MicroLED Display: Technology and Applications Status
  
  Eric Virey, Yole Développement
  
  Zine Bouhamri, Yole Développement
  
  Claire Troadec, Yole Developpement
  
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Brady, A.

Northrop-Grumman SYNOPTICS, Charlotte, NC
- May 12, 2022 // 2:50pm
  
  16.5 Manufacturing Challenges of Czochralski Growth and Fabrication of 2-inch Semi-Insulating Beta Gallium Oxide Substrates
  
  John Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
  
  G. Foundos, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
  V, Gambin, Northrop-Grumman (AS), Redondo Beach, CA
  
  W. Everson, Penn State University, PA,
  
  C. Scott, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
  D. Synder, Penn State University
  
  A. Brady, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
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Brown, Adam

Nexperia. Manchester, UK
- May 12, 2022 // 2:30pm
  
  17.4 Clip bonded CCPAK-1212: Engineering the next generation GaN products
  
  Serge Karboyan, Nexperia. Manchester, UK
  
  Adam Brown, Nexperia. Manchester, UK
  
  Bas Verheijen, Nexperia. Manchester, UK
  
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Brunner, Frank

Ferdinand-Braun-Institut, Berlin, Germany
- May 12, 2022 // 11:10am
  
  14.2 Areal Vertical-Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN-Based Devices
  
  Eldad Bahat Treidel, Ferdinand-Braun-Institut, Berlin, Germany
  
  Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
  
  Oliver Hilt, Ferdinand-Braun-Institut, Berlin, Germany
  
  Joachim Würfl, Ferdinand-Braun-Institut, Berlin, Germany
  
  Mihaela Wolf, Ferdinand-Braun-Institut, Berlin, Germany
  
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Burger, J.

Integra Technologies
- May 11, 2022 // 5:30pm
  
  11.4 1E7 Hours MTTF At 200°C Of 100V RF AlGaN/GaN-SiC HEMT Through ALT Characterization
  
  Gabriele Formicone, Integra Technologies, Inc.
  
  J. Bell, Integra Technologies
  
  D. Hou, Global Communication Semiconductors, LLC
  
  S. Wang, Global Communication Semiconductors, Inc.
  
  D. Wang, Global Communication Semiconductors, Inc.
  
  J. Burger, Integra Technologies
  
  W. Cheng, Integra Technologies
  
  W. Fan, Momentive Technologies
  
  J. McKay, Global Communications
  
  D. Mohata, Global Communications
  
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Burke, E.

Skyworks Solutions Inc.
- May 12, 2022 // 11:10am
  
  15.2 BiHEMT Idss Control for Yield Improvement
  
  Eric Finchem, MACOM
  
  Dylan Bartle, Skyworks Solutions Inc.
  
  Sam Mony, Skyworks Solution Inc.
  
  M. J. Miller, Skyworks Solutions Inc.
  
  S. Singh, Skyworks Solutions Inc.
  
  A. Chao, Skyworks Solutions Inc.
  
  A. Canlas, Skyworks Solutions Inc.
  
  E. Burke, Skyworks Solutions Inc.
  
  C. Munoz, Skyworks Solutions Inc.
  
  M. A. Zeeshan, Skyworks Solutions Inc.
  
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Canlas, A.

Skyworks Solutions Inc.
- May 12, 2022 // 11:10am
  
  15.2 BiHEMT Idss Control for Yield Improvement
  
  Eric Finchem, MACOM
  
  Dylan Bartle, Skyworks Solutions Inc.
  
  Sam Mony, Skyworks Solution Inc.
  
  M. J. Miller, Skyworks Solutions Inc.
  
  S. Singh, Skyworks Solutions Inc.
  
  A. Chao, Skyworks Solutions Inc.
  
  A. Canlas, Skyworks Solutions Inc.
  
  E. Burke, Skyworks Solutions Inc.
  
  C. Munoz, Skyworks Solutions Inc.
  
  M. A. Zeeshan, Skyworks Solutions Inc.
  
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Cao, Y.

University of Bristol, Bristol, UK
- May 11, 2022 // 4:50pm
  
  11.2 Design and Manufacture of Edge Termination in Vertical GaN Diodes: Electric Field Distribution Probed by Second Harmonic Generation
  
  M.J. Uren, University of Bristol, Bristol, UK
  
  M. Kuball, University of Bristol, Bristol, UK
  
  B. Shankar, University of Bristol, Bristol, UK
  
  D. Ji, University of Bristol, Bristol, UK
  
  Y. Cao, University of Bristol, Bristol, UK
  
  Student Presentation
  
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Caulmilone, Raphael

SOITEC
- May 12, 2022 // 3:20pm
  
  18.18 Reduction in Thermal Boundary Conductance of Annealed Direct Wafer Bonded GaN|Si Heterojunction Interfaces
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  V. Dragoi, EV Group
  
  Eric Guiot, SOITEC
  
  Raphael Caulmilone, SOITEC
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  X. Yan, University of California Irvine
  
  T. Pfeifer, University of Virginia Charlottesville
  
  N. Razek, EV Group and R-Ray Medical
  
  X. Pan, Soitec
  
  P. E. Hopkin, University of Virginia Charlottesville
  
  J. Tomko, University of Virginia Charlottesville
  
  Student Presentation
  
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Chabak, K.

Air Force Research Laboratory, Sensors Directorate
- May 10, 2022 // 4:50pm
  
  4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
  
  G. Cueva, MACOM
  
  E. Werner, KBR, Wright-Patterson AFB
  
  A. Islam, Air Force Research Laboratory
  
  N. Miller, Air Force Research Laboratory
  
  A. Crespo, Air Force Research Laboratory, Sensors Directorate
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  D. Walker Jr., Air Force Research Laboratory
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  R. Fitch, Air Force Research Laboratory
  
  K. Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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Chabak, Kelson

Air Force Research Laboratory, Sensors Directorate
- May 11, 2022 // 11:40am
  
  8.3 Device Figure of Merit Performance of Scaled Gamma-Gate β-Ga2O3 MOSFETs
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Jeremiah Williams, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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- May 11, 2022 // 2:40pm
  
  10.3 Optimization of GaN RF Switch Device Performance using AFRL GaN140 MMIC Process
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  E. Werner, KBR, Wright-Patterson AFB
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Michael Schuette, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  John L. Ebel, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
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Chang, Chia-Ming

WIN Semiconductors Corp.
- May 10, 2022 // 4:00pm
  
  5.1 III-V Semiconductor Devices on 6-inch Wafer for sub-Terahertz Communications
  
  Jung-Tao Chung, WIN Semiconducotrs Corp
  
  Yu-An Liao, WIN Semiconductors Corp.
  
  Jung-Hao Hsu, WIN Semiconductors Corp.
  
  Hsi-Tsung Lin, WIN Semiconductors Corp.
  
  Shu-Hsiao Tsai, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp.
  
  Lung-Yi Tseng, WIN Semiconductors Corp.
  
  Chia-Ming Chang, WIN Semiconductors Corp.
  
  Invited Presentation
  
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Chang, Chun-Tse

WIN Semiconductors Corp.
- May 11, 2022 // 11:40am
  
  7.3 Reliability Assessment of 940 nm VCSEL Array based on Pulsed Mode Thermal Analysis
  
  Mingwei Tsai, WIN semiconductors
  
  Yin-Hsiang Lin, WIN Semiconductors Corp.
  
  Chun-Tse Chang, WIN Semiconductors Corp.
  
  Kai-Lun Chi, WIN Semiconductors Corp.
  
  Lap-Sum Yip, WIN Semiconductors Corp.
  
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Chang, M. C. Frank

University of California, Los Angeles, CA USA
- May 10, 2022 // 2:20pm
  
  3.2 Rising mm‐Wave Era for Sensing/Networking with Multi‐Facet System/Technology Challenges
  
  M. C. Frank Chang, University of California, Los Angeles, CA USA
  
  Invited Presentation
  
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Chang, Stephanie

Skyworks Solutions Inc.
- May 10, 2022 // 5:30pm
  
  5.5 Optimizing Process Conditions for High Uniformity and Stability of Tantalum Nitride Films Stephanie Chang, Shiban Tiku, and Lam Luu-Henderson
  
  Shiban K. Tiku, Skyworks Solutions, Inc.
  
  Lam Luu-Henderson, Skyworks Solutions Inc.
  
  Stephanie Chang, Skyworks Solutions Inc.
  
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Chao, A.

Skyworks Solutions Inc.
- May 12, 2022 // 11:10am
  
  15.2 BiHEMT Idss Control for Yield Improvement
  
  Eric Finchem, MACOM
  
  Dylan Bartle, Skyworks Solutions Inc.
  
  Sam Mony, Skyworks Solution Inc.
  
  M. J. Miller, Skyworks Solutions Inc.
  
  S. Singh, Skyworks Solutions Inc.
  
  A. Chao, Skyworks Solutions Inc.
  
  A. Canlas, Skyworks Solutions Inc.
  
  E. Burke, Skyworks Solutions Inc.
  
  C. Munoz, Skyworks Solutions Inc.
  
  M. A. Zeeshan, Skyworks Solutions Inc.
  
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Chen, C.

Momentive Technologies
- May 12, 2022 // 3:20pm
  
  18.3 Heater Performance Improvement with Ceramic Coatings for GaN MOCVD Process
  
  T. Yamamoto, Momentive Technologies
  
  B. Kozak, Momentive Technologies
  
  Y. Morikawa, Momentive Technologies
  
  T. Higuchi, Momentive Technologies
  
  Y. Matsui, Momentive Technologies
  
  D. Sabens, Momentive Technologies
  
  P. Schmidt-Sane, Momentive Technologies
  
  J. lennartz, Momentive Technologies
  
  W. Fan, Momentive Technologies
  
  C. Chen, Momentive Technologies
  
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Chen, Z.

University of Arkansas, Fayetteville
- May 12, 2022 // 2:50pm
  
  17.5 High-Temperature SiC Power Module with Integrated LTCC-Based Gate Driver
  
  P. Lai, University of Arkansas, Fayetteville
  
  S. Chinnaiyan, University of Arkansas, Fayetteville
  
  S. Ahmed, University of Arkansas, Fayetteville
  
  A. Mantooth, University of Arkansas, Fayetteville
  
  Z. Chen, University of Arkansas, Fayetteville
  
  D. Gonzalez, University of Arkansas, Fayetteville
  
  Student Presentation
  
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Cheng, Kezia

Skyworks Solutions Inc.
- May 10, 2022 // 5:10pm
  
  5.4 Effects of Deposition Rate, Beam Sweep and Crucible in an Evaporation Process
  
  Kezia Cheng, Skyworks Solutions Inc.
  
  Guoliang Zhou, Skyworks Solutions, Inc.
  
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Cheng, W.

Integra Technologies
- May 11, 2022 // 5:30pm
  
  11.4 1E7 Hours MTTF At 200°C Of 100V RF AlGaN/GaN-SiC HEMT Through ALT Characterization
  
  Gabriele Formicone, Integra Technologies, Inc.
  
  J. Bell, Integra Technologies
  
  D. Hou, Global Communication Semiconductors, LLC
  
  S. Wang, Global Communication Semiconductors, Inc.
  
  D. Wang, Global Communication Semiconductors, Inc.
  
  J. Burger, Integra Technologies
  
  W. Cheng, Integra Technologies
  
  W. Fan, Momentive Technologies
  
  J. McKay, Global Communications
  
  D. Mohata, Global Communications
  
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Chi, Kai-Lun

WIN Semiconductors Corp.
- May 11, 2022 // 11:40am
  
  7.3 Reliability Assessment of 940 nm VCSEL Array based on Pulsed Mode Thermal Analysis
  
  Mingwei Tsai, WIN semiconductors
  
  Yin-Hsiang Lin, WIN Semiconductors Corp.
  
  Chun-Tse Chang, WIN Semiconductors Corp.
  
  Kai-Lun Chi, WIN Semiconductors Corp.
  
  Lap-Sum Yip, WIN Semiconductors Corp.
  
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Chinnaiyan, S.

University of Arkansas, Fayetteville
- May 12, 2022 // 2:50pm
  
  17.5 High-Temperature SiC Power Module with Integrated LTCC-Based Gate Driver
  
  P. Lai, University of Arkansas, Fayetteville
  
  S. Chinnaiyan, University of Arkansas, Fayetteville
  
  S. Ahmed, University of Arkansas, Fayetteville
  
  A. Mantooth, University of Arkansas, Fayetteville
  
  Z. Chen, University of Arkansas, Fayetteville
  
  D. Gonzalez, University of Arkansas, Fayetteville
  
  Student Presentation
  
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Chiu, P.

Yole Developpement, France
- May 10, 2022 // 12:00pm – 12:19pm
  
  1.6 Thrilling Compound Semiconductor Business Opportunities in China
  
  P. Chiu, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  T. Ayari, Yole Developpement, France
  
  C. Troadec, Yole Developpement, France
  
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- May 11, 2022 // 12:00pm
  
  8.4 Rise and Rise of SiC and GaN in Power Electronic Industry
  
  C. Troadec, Yole Developpement, France
  
  P. Chiu, Yole Developpement, France
  
  T. Ayari, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  R. Della-Giustina, Yole Developpement, France
  
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Cho, Minkyu

Georgia Institute of Technology, Atlanta, GA
- May 12, 2022 // 3:20pm
  
  18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Ted Laurence, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Student Presentation
  
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choi, Chulsoon

Wavice Inc.
- May 10, 2022 // 2:50pm
  
  3.3 3.8 GHz 20W Compact 2 stage GaN HEMT Power Amplifier using IPD on HPSI SiC substrate
  
  Jinman Jin, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Min Han, Wavice Inc.
  
  Myoungkeun Song, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Myungsoo Park, Wavice Inc.,
  
  Sangmin Lee, Wavice Inc.
  
  Hogeun Lee, Wavice Inc.,
  
  Inseop Kim, Wavice Inc.,
  
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- May 10, 2022 // 5:30pm
  
  4.5 Electrical characteristics of Wavice GaN HEMT on 4” SiC with 0.2 μm gate process for X- and Ku- band applications
  
  Min Han, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
  
  Junhyeok Lee, Wavice Inc.,
  
  Kyeongjae Lee, Wavice Inc.,
  
  Hankyul Ji, Wavice Inc.,
  
  Hogeun Lee, Wavice Inc.,
  
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Choi, Hyungsoo

University of Illinois Urbana-Champagne and Holonyak Micro and Nanotechnology Laboratory
- May 12, 2022 // 3:20pm
  
  18.7 Role of Substrate on the Reverse Leakage Behavior of the Vertical GaN Devices
  
  Riley Vesto, University of Illinois at Urbana-Champaign
  
  Kyekyoon Kim, University of Illinois at Urbana-Champaign
  
  Matthew Pianfetti, University of Illinois Urbana-Champagne
  
  Luke Hartmann, University of Illinois Urbana-Champagne
  
  Rebekah Wilson, U.S, Army Construction Engineering Research Laboratory
  
  Hyungsoo Choi, University of Illinois Urbana-Champagne and Holonyak Micro and Nanotechnology Laboratory
  
  Student Presentation
  
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Choi, Jun Hee

Samsung Advanced Institute of Technology
- May 11, 2022 // 8:45am
  
  6.2 Technology and Future Perspectives of III-V Devices
  
  Woochul Jeon, Samsung Advanced Institute of Technology
  
  Jongseob Kim, Samsung Advanced Institute of Technology
  
  Kyungwook Hwang, Samsung Advanced Institute of Technology
  
  Sanghun Lee, Samsung Advanced Institute of Technology
  
  Jai Kwang Shin, Samsung Advanced Institute of Technology
  
  Yongsung Kim, Samsung Advanced Institute of Technology
  
  Jun Hee Choi, Samsung Advanced Institute of Technology
  
  Plenary Presentation
  
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Choi, Seokgyu

Wavice Inc.
- May 10, 2022 // 2:50pm
  
  3.3 3.8 GHz 20W Compact 2 stage GaN HEMT Power Amplifier using IPD on HPSI SiC substrate
  
  Jinman Jin, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Min Han, Wavice Inc.
  
  Myoungkeun Song, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Myungsoo Park, Wavice Inc.,
  
  Sangmin Lee, Wavice Inc.
  
  Hogeun Lee, Wavice Inc.,
  
  Inseop Kim, Wavice Inc.,
  
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- May 10, 2022 // 5:30pm
  
  4.5 Electrical characteristics of Wavice GaN HEMT on 4” SiC with 0.2 μm gate process for X- and Ku- band applications
  
  Min Han, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
  
  Junhyeok Lee, Wavice Inc.,
  
  Kyeongjae Lee, Wavice Inc.,
  
  Hankyul Ji, Wavice Inc.,
  
  Hogeun Lee, Wavice Inc.,
  
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Choi, Sua

Kumoh National Institute of Technology
- May 12, 2022 // 3:20pm
  
  18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process
  
  Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Sua Choi, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Hojun Lee, Pusan National University of Korea
  
  Jeehun Jeong, Pusan National University of Korea
  
  Student Presentation
  
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Chu, Kanin

BAE Systems Inc
- May 12, 2022 // 3:20pm
  
  18.14 GaN Wafer Level AuSn Solder Deposition Wen Zhu, Kanin Chu, and Blair Coburn BAE Systems, Nashua, NH USA
  
  Wen Zhu, BAE Systems Inc
  
  Kanin Chu, BAE Systems Inc
  
  Blair Coburn, BAE Systems
  
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Chung, Jung-Tao

WIN Semiconducotrs Corp
- May 10, 2022 // 4:00pm
  
  5.1 III-V Semiconductor Devices on 6-inch Wafer for sub-Terahertz Communications
  
  Jung-Tao Chung, WIN Semiconducotrs Corp
  
  Yu-An Liao, WIN Semiconductors Corp.
  
  Jung-Hao Hsu, WIN Semiconductors Corp.
  
  Hsi-Tsung Lin, WIN Semiconductors Corp.
  
  Shu-Hsiao Tsai, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp.
  
  Lung-Yi Tseng, WIN Semiconductors Corp.
  
  Chia-Ming Chang, WIN Semiconductors Corp.
  
  Invited Presentation
  
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Clark, Andrew

IQE, Cardiff, UK
- May 11, 2022 // 2:40pm
  
  9.3 First Demonstration Of High Performance 940nm VCSELs Grown On 200mm Diameter Substrates
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Andrew Clark, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  Rodney Pelzel, IQE, Cardiff, UK
  
  Wang Wang, IQE, Cardiff, UK
  
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Coburn, Blair

BAE Systems
- May 12, 2022 // 3:20pm
  
  18.14 GaN Wafer Level AuSn Solder Deposition Wen Zhu, Kanin Chu, and Blair Coburn BAE Systems, Nashua, NH USA
  
  Wen Zhu, BAE Systems Inc
  
  Kanin Chu, BAE Systems Inc
  
  Blair Coburn, BAE Systems
  
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Cok, Ron

X-Celeprint, Research
- May 11, 2022 // 4:20pm
  
  12.1 Micro-Transfer Printing for Micro-Assembly of Heterogeneous Integrated Compound Semiconductor Components
  
  David Gomez, X-Celeprint, Inc.
  
  Tanya Moore, X-Celeprint, Inc.
  
  Alin Fecioru, X-Celeprint, Ltd., Cork, Ireland
  
  Kevin Oswalt, X-Celeprint, Research
  
  James Thostenson, X-Celeprint, Research
  
  Chris Reyes, X-Celeprint, Research
  
  Ron Cok, X-Celeprint, Research
  
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Cordovez, Juan

Global Foundries, Austin, TX
- May 10, 2022 // 8:30am
  
  1.2 GaN’s Expected Impact on the Power Electronics Industry to Electrify Our World
  
  Juan Cordovez, Global Foundries, Austin, TX
  
  1.1 New Norm
  
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Crespo, A.

Air Force Research Laboratory, Sensors Directorate
- May 10, 2022 // 4:50pm
  
  4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
  
  G. Cueva, MACOM
  
  E. Werner, KBR, Wright-Patterson AFB
  
  A. Islam, Air Force Research Laboratory
  
  N. Miller, Air Force Research Laboratory
  
  A. Crespo, Air Force Research Laboratory, Sensors Directorate
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  D. Walker Jr., Air Force Research Laboratory
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  R. Fitch, Air Force Research Laboratory
  
  K. Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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Croot, A.

SPTS, Newport, UK
- May 12, 2022 // 3:20pm
  
  18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs
  
  Kevin Riddell, SPTS, Newport, UK
  
  A. Croot, SPTS, Newport, UK
  
  C. Bolton, SPTS, Newport, UK
  
  B. Jones, Swansea University, Swansea, UK
  
  F. Monaghan, Swansea University, Swansea, UK
  
  J. Mitchell, Swansea University, Swansea, UK
  
  M. R. Jennings, Swansea University, Swansea, UK
  
  O. J. Guy, Swansea University, Swansea, UK
  
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Cuenca, Jerome

Cardiff University, Cardiff, UK
- May 12, 2022 // 3:20pm
  
  18.12 GaN-on-Si Membranes for Power Device Applications: Stress Evolution throughout Fabrication
  
  Jerome Cuenca, Cardiff University, Cardiff, UK
  
  Oliver Williams, Cardiff University, Cardiff, UK
  
  Matin Kuball, University of Bristol, Bristol, UK,
  
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Cueva, G.

MACOM
- May 10, 2022 // 4:50pm
  
  4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
  
  G. Cueva, MACOM
  
  E. Werner, KBR, Wright-Patterson AFB
  
  A. Islam, Air Force Research Laboratory
  
  N. Miller, Air Force Research Laboratory
  
  A. Crespo, Air Force Research Laboratory, Sensors Directorate
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  D. Walker Jr., Air Force Research Laboratory
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  R. Fitch, Air Force Research Laboratory
  
  K. Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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D Hodge, Michael

Akoustis Technologies
- May 11, 2022 // 1:40pm
  
  10.1 Single Crystal AlScN-on-Silicon XBAW RF Filter Technology for Wide Bandwidth, High Frequency 5G and WiFi Applications
  
  Jeffrey Shealy, Akoustis Technologies
  
  Pinal Patel, Akoustis Technologies
  
  Michael D Hodge, Akoustis Technologies
  
  Mary Winters, Akoustis Technologies
  
  C. Moe, Akoustis Technologies
  
  J. Leathersich, Akoustis Technologies
  
  F. Bi, Akoustis Technologies
  
  D. Kim, Akoustis Technologies
  
  A. Kochhar, Akoustis Technologies
  
  E. Mehdizadeh, Akoustis Technologies
  
  Invited Presentation
  
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D. Dupuis, Russell

Georgia Institute of Technology, Atlanta, GA
- May 12, 2022 // 3:20pm
  
  18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Ted Laurence, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Student Presentation
  
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Daeumer, Matthias

Lawrence Livermore National Laboratory, Livermore, CA
- May 12, 2022 // 3:20pm
  
  18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Ted Laurence, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Student Presentation
  
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Dao, Chuong

HRL Laboratories, Malibu, CA,
- May 12, 2022 // 9:15am
  
  13.3 Highly-Linear and Efficient mm-Wave GaN HEMT Technology
  
  Jeong-Sun Moon, HRL Laboratories, Malibu, CA,
  
  Robert Grabar, HRL Laboratories, Malibu, CA,
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Joe Tai, HRL Laboratories, Malibu, CA,
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Patrick Fay, University of Notre Dame
  
  Joel Wong, HRL Laboratories, Malibu, CA,
  
  Didiel Vazquez-Morales, HRL Laboratories, Malibu, CA,
  
  Chuong Dao, HRL Laboratories, Malibu, CA,
  
  Shyam Bharadwaj, HRL Laboratories, Malibu, CA,
  
  Nivedhita Venkatesan, University of Notre Dame
  
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Daubert, J.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Davenport, Michael

Quintessent, Goleta, CA,
- May 11, 2022 // 2:10pm
  
  9.2 Enabling bandwidth scaling for datacenter and AI/ML applications using III-V and silicon photonic devices
  
  Brian Koch, Quintessent, Goleta, CA,
  
  Michael Davenport, Quintessent, Goleta, CA,
  
  John Garcia, Quintessent, Goleta, CA,
  
  Alan Liu, Quintessent, Goleta, CA,
  
  Invited Presentation
  
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Davies, J. Iwan

IQE plc
- May 11, 2022 // 12:00pm
  
  7.4 Impact of Strain-Induced Bow on the Manufacture of VCSELs on 150mm GaAs- and Ge-Substrate Wafers
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Thomas Peach, Cardiff University
  
  Craig Allford, Cardiff University
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University. IQE plc
  
  Peter M. Smowton, Cardiff University, IQE plc
  
  Student Presentation
  
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Deal, W. R.

Northrop Grumman (AS), Redondo Beach, CA, USA
- May 12, 2022 // 10:40am
  
  15.1 Overcoming Challenges in Advanced InP HEMT Manufacturing
  
  F. Lian, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  I. Smorchkova, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  X. B. Mci, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  H. Ma, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  W. R. Deal, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  W Yoshida, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  Invited Presentation
  
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Decoutere, Stefaan

Imec, Leuven, Belgium
- March 10, 2022 // 8:45am
  
  13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
  
  Cem Basceri, QROMIS, USA
  
  Vlad Odnoblyudov, QROMIS, USA
  
  O. Aktas, Sandia National Labs, Albuquerque, NM
  
  Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
  
  Karen Geens, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  D. Fahle, AIXTRON SE Germany
  
  Stefaan Decoutere, Imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  M. Heuken, AIXTRON SE Germany
  
  Invited Presentation
  
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Della-Giustina, R.

Yole Developpement, France
- May 11, 2022 // 12:00pm
  
  8.4 Rise and Rise of SiC and GaN in Power Electronic Industry
  
  C. Troadec, Yole Developpement, France
  
  P. Chiu, Yole Developpement, France
  
  T. Ayari, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  R. Della-Giustina, Yole Developpement, France
  
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Deng, Ligang

Oxford Instruments Plasma Technology
- May 11, 2022 // 3:00pm
  
  9.4 Etching of GaAs/AlGaAs VCSEL Mesa for High Volume Production
  
  Katie Hore, Oxford Instruments Plasma Technology
  
  Ning Zhang, Oxford Instruments Plasma Technology
  
  Stephanie Baclet, Oxford Instruments Plasma Technology
  
  Ligang Deng, Oxford Instruments Plasma Technology
  
  David Hooper, Oxford Instruments
  
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Detchphrom, Theeradetch

Georgia Institute of Technology, Atlanta, GA
- May 12, 2022 // 3:20pm
  
  18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Ted Laurence, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Student Presentation
  
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Diaz, Jose

BAE Systems Inc
- May 12, 2022 // 3:20pm
  
  18.1 Polyimide Film Process Equipment Qualification
  
  Jose Diaz, BAE Systems Inc
  
  X. Yang, MEC, BAE Systems, IQE
  
  Amehayesus Gebreyohannes, BAE Systems
  
  Nitin Kalra, BAE Systems
  
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Dogmus, E.

Yole Developpement, France
- May 10, 2022 // 12:00pm – 12:19pm
  
  1.6 Thrilling Compound Semiconductor Business Opportunities in China
  
  P. Chiu, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  T. Ayari, Yole Developpement, France
  
  C. Troadec, Yole Developpement, France
  
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- May 11, 2022 // 12:00pm
  
  8.4 Rise and Rise of SiC and GaN in Power Electronic Industry
  
  C. Troadec, Yole Developpement, France
  
  P. Chiu, Yole Developpement, France
  
  T. Ayari, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  R. Della-Giustina, Yole Developpement, France
  
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Dong, Mei

Brewer Science
- May 11, 2022 // 5:10pm
  
  12.3 A Novel Photosensitive Permanent Bonding Material Designed for Polymer/Metal Hybrid Bonding Applications
  
  Michele Fowler, Brewer Science
  
  Mei Dong, Brewer Science
  
  Alice Guerrero, Brewer Science
  
  Baron Huang, Brewer Science
  
  Rama Puligadda, Brewer Science
  
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Dragoi, V.

EV Group
- May 12, 2022 // 3:20pm
  
  18.18 Reduction in Thermal Boundary Conductance of Annealed Direct Wafer Bonded GaN|Si Heterojunction Interfaces
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  V. Dragoi, EV Group
  
  Eric Guiot, SOITEC
  
  Raphael Caulmilone, SOITEC
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  X. Yan, University of California Irvine
  
  T. Pfeifer, University of Virginia Charlottesville
  
  N. Razek, EV Group and R-Ray Medical
  
  X. Pan, Soitec
  
  P. E. Hopkin, University of Virginia Charlottesville
  
  J. Tomko, University of Virginia Charlottesville
  
  Student Presentation
  
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Drechsler, Annaliese

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Dryden, Daniel M.

KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
- May 11, 2022 // 11:40am
  
  8.3 Device Figure of Merit Performance of Scaled Gamma-Gate β-Ga2O3 MOSFETs
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Jeremiah Williams, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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Dvorak, Martin

Keysight Technologies, Inc.
- May 10, 2022 // 4:30pm
  
  5.2 GaAsSb/InP DHBT Extrinsic Base Regrowth Using In-situ Hydrogen Plasma Surface Treatment and Molecular Beam Epitaxy
  
  Barry Wu, Keysight Technologies, Inc.
  
  Martin Dvorak, Keysight Technologies, Inc.
  
  Forest Huang, Keysight Technologies, Inc.
  
  Scott LaFrancois, Keysight Technologies, Inc.
  
  Mathias Bonse, Keysight Technologies, Inc.
  
  Evan Lobisser, Keysight Technologies, Inc.
  
  Masaya Iwamoto, Keysight Technologies, Inc.
  
  Ben Zaks, Keysight Technologies, Inc.
  
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Ebel, John L.

Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
- May 11, 2022 // 2:40pm
  
  10.3 Optimization of GaN RF Switch Device Performance using AFRL GaN140 MMIC Process
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  E. Werner, KBR, Wright-Patterson AFB
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Michael Schuette, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  John L. Ebel, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
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Ebrahimi, Nercy

Skyworks Solution Inc.
- May 12, 2022 // 3:20pm
  
  18.8 Solution-Phase Processed Zinc Oxide Vertical Schottky Diode using Flow-limited Field-Injection Electrostatic Spraying
  
  Samuel Mony, Skyworks Solutions, Inc.
  
  Jiang Li, Skyworks Solutions, Inc.
  
  Nercy Ebrahimi, Skyworks Solution Inc.
  
  Mohammadsadegh Beheshti, Skyworks Solutions Inc.
  
  Student Presentation
  
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- May 12, 2022 // 3:20pm
  
  18.9 Optimization in Noble Metal Hard Mask Selectivity in Chlorine-Based Plasma Etch
  
  Mohammadsadegh Beheshti, Skyworks Solutions Inc.
  
  Samuel Mony, Skyworks Solutions, Inc.
  
  Jiang Li, Skyworks Solutions, Inc.
  
  Nercy Ebrahimi, Skyworks Solution Inc.
  
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Edwards, N.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Evans, Sam

Nexperia Newport Wafer Fab, Newport, UK
- May 12, 2022 // 11:30am
  
  14.3 Dynamic Ron in AlGaN/GaN Structure with Different Layer Thickness
  
  Hyun-Seop Kim, University of Bristol, Bristol, UK
  
  Hassan Hirshy, IQE, Cardiff, UK
  
  Andrew Withey, Nexperia Newport Wafer Fab, Newport, UK
  
  Robert Harper, Compound Semiconductor Centre, Cardiff, UK
  
  Sam Evans, Nexperia Newport Wafer Fab, Newport, UK
  
  Matin Kuball, University of Bristol, Bristol, UK,
  
  Michael J Uren, University of Bristol, Bristol, UK
  
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Everson, W.

Penn State University, PA,
- May 12, 2022 // 2:50pm
  
  16.5 Manufacturing Challenges of Czochralski Growth and Fabrication of 2-inch Semi-Insulating Beta Gallium Oxide Substrates
  
  John Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
  
  G. Foundos, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
  V, Gambin, Northrop-Grumman (AS), Redondo Beach, CA
  
  W. Everson, Penn State University, PA,
  
  C. Scott, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
  D. Synder, Penn State University
  
  A. Brady, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
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Fahle, D.

AIXTRON SE Germany
- March 10, 2022 // 8:45am
  
  13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
  
  Cem Basceri, QROMIS, USA
  
  Vlad Odnoblyudov, QROMIS, USA
  
  O. Aktas, Sandia National Labs, Albuquerque, NM
  
  Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
  
  Karen Geens, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  D. Fahle, AIXTRON SE Germany
  
  Stefaan Decoutere, Imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  M. Heuken, AIXTRON SE Germany
  
  Invited Presentation
  
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Faili, Firooz

Element Six Technologies, Santa Clara, CA
- May 12, 2022 // 2:10pm
  
  16.3 Diamond Resistives – The Passive Way to Manage the Heat and Keep the VSWR Low at High Frequencies
  
  Firooz Faili, Element Six Technologies, Santa Clara, CA
  
  Thomas Obeloer, Element Six, Harwell, UK
  
  Daniel J. Twitchen, Element Six, Harwell, UK
  
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Fan, W.

Momentive Technologies
- May 11, 2022 // 5:30pm
  
  11.4 1E7 Hours MTTF At 200°C Of 100V RF AlGaN/GaN-SiC HEMT Through ALT Characterization
  
  Gabriele Formicone, Integra Technologies, Inc.
  
  J. Bell, Integra Technologies
  
  D. Hou, Global Communication Semiconductors, LLC
  
  S. Wang, Global Communication Semiconductors, Inc.
  
  D. Wang, Global Communication Semiconductors, Inc.
  
  J. Burger, Integra Technologies
  
  W. Cheng, Integra Technologies
  
  W. Fan, Momentive Technologies
  
  J. McKay, Global Communications
  
  D. Mohata, Global Communications
  
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- May 12, 2022 // 3:20pm
  
  18.3 Heater Performance Improvement with Ceramic Coatings for GaN MOCVD Process
  
  T. Yamamoto, Momentive Technologies
  
  B. Kozak, Momentive Technologies
  
  Y. Morikawa, Momentive Technologies
  
  T. Higuchi, Momentive Technologies
  
  Y. Matsui, Momentive Technologies
  
  D. Sabens, Momentive Technologies
  
  P. Schmidt-Sane, Momentive Technologies
  
  J. lennartz, Momentive Technologies
  
  W. Fan, Momentive Technologies
  
  C. Chen, Momentive Technologies
  
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Fanning, David

HRL Laboratories, Malibu, CA,
- May 10, 2022 // 5:10pm
  
  4.4 Improving manufacturability of highly scaled RF GaN HEMTs
  
  Georges Siddiqi, HRL Laboratories
  
  Andrea Corrion, HRL Laboratories
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Michael Johnson, HRL Laboratories
  
  Dan Denninghoff, HRL Laboratories
  
  Joseph Nedy, HRL Laboratories
  
  Hannah Robinson, HRL Laboratories
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Haidang Tran, HRL Laboratories
  
  Quang Lam, HRL Laboratories
  
  Luis Fortin, HRL Laboratories
  
  Florian Herrault, HRL Laboratories
  
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- May 12, 2022 // 9:15am
  
  13.3 Highly-Linear and Efficient mm-Wave GaN HEMT Technology
  
  Jeong-Sun Moon, HRL Laboratories, Malibu, CA,
  
  Robert Grabar, HRL Laboratories, Malibu, CA,
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Joe Tai, HRL Laboratories, Malibu, CA,
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Patrick Fay, University of Notre Dame
  
  Joel Wong, HRL Laboratories, Malibu, CA,
  
  Didiel Vazquez-Morales, HRL Laboratories, Malibu, CA,
  
  Chuong Dao, HRL Laboratories, Malibu, CA,
  
  Shyam Bharadwaj, HRL Laboratories, Malibu, CA,
  
  Nivedhita Venkatesan, University of Notre Dame
  
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Fay, Patrick

University of Notre Dame
- May 12, 2022 // 9:15am
  
  13.3 Highly-Linear and Efficient mm-Wave GaN HEMT Technology
  
  Jeong-Sun Moon, HRL Laboratories, Malibu, CA,
  
  Robert Grabar, HRL Laboratories, Malibu, CA,
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Joe Tai, HRL Laboratories, Malibu, CA,
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Patrick Fay, University of Notre Dame
  
  Joel Wong, HRL Laboratories, Malibu, CA,
  
  Didiel Vazquez-Morales, HRL Laboratories, Malibu, CA,
  
  Chuong Dao, HRL Laboratories, Malibu, CA,
  
  Shyam Bharadwaj, HRL Laboratories, Malibu, CA,
  
  Nivedhita Venkatesan, University of Notre Dame
  
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Fecioru, Alin

X-Celeprint, Ltd., Cork, Ireland
- May 11, 2022 // 4:20pm
  
  12.1 Micro-Transfer Printing for Micro-Assembly of Heterogeneous Integrated Compound Semiconductor Components
  
  David Gomez, X-Celeprint, Inc.
  
  Tanya Moore, X-Celeprint, Inc.
  
  Alin Fecioru, X-Celeprint, Ltd., Cork, Ireland
  
  Kevin Oswalt, X-Celeprint, Research
  
  James Thostenson, X-Celeprint, Research
  
  Chris Reyes, X-Celeprint, Research
  
  Ron Cok, X-Celeprint, Research
  
  Invited Presentation
  
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Field, Daniel

University of Bristol
- May 11, 2022 // 4:50pm
  
  12.2 Differences in SiC Wafer Thermal Conductivity from Face-to-Face Dependent on Polishing
  
  Daniel Field, University of Bristol
  
  Martin Kuball, University of Bristol
  
  Filip Wach, University of Bristol
  
  Student Presentation
  
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Finchem, Eric

MACOM
- May 12, 2022 // 11:10am
  
  15.2 BiHEMT Idss Control for Yield Improvement
  
  Eric Finchem, MACOM
  
  Dylan Bartle, Skyworks Solutions Inc.
  
  Sam Mony, Skyworks Solution Inc.
  
  M. J. Miller, Skyworks Solutions Inc.
  
  S. Singh, Skyworks Solutions Inc.
  
  A. Chao, Skyworks Solutions Inc.
  
  A. Canlas, Skyworks Solutions Inc.
  
  E. Burke, Skyworks Solutions Inc.
  
  C. Munoz, Skyworks Solutions Inc.
  
  M. A. Zeeshan, Skyworks Solutions Inc.
  
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Fitch, R.

Air Force Research Laboratory
- May 10, 2022 // 4:50pm
  
  4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
  
  G. Cueva, MACOM
  
  E. Werner, KBR, Wright-Patterson AFB
  
  A. Islam, Air Force Research Laboratory
  
  N. Miller, Air Force Research Laboratory
  
  A. Crespo, Air Force Research Laboratory, Sensors Directorate
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  D. Walker Jr., Air Force Research Laboratory
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  R. Fitch, Air Force Research Laboratory
  
  K. Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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Formicone, Gabriele

Integra Technologies, Inc.
- May 11, 2022 // 5:30pm
  
  11.4 1E7 Hours MTTF At 200°C Of 100V RF AlGaN/GaN-SiC HEMT Through ALT Characterization
  
  Gabriele Formicone, Integra Technologies, Inc.
  
  J. Bell, Integra Technologies
  
  D. Hou, Global Communication Semiconductors, LLC
  
  S. Wang, Global Communication Semiconductors, Inc.
  
  D. Wang, Global Communication Semiconductors, Inc.
  
  J. Burger, Integra Technologies
  
  W. Cheng, Integra Technologies
  
  W. Fan, Momentive Technologies
  
  J. McKay, Global Communications
  
  D. Mohata, Global Communications
  
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Fortin, Luis

HRL Laboratories
- May 10, 2022 // 5:10pm
  
  4.4 Improving manufacturability of highly scaled RF GaN HEMTs
  
  Georges Siddiqi, HRL Laboratories
  
  Andrea Corrion, HRL Laboratories
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Michael Johnson, HRL Laboratories
  
  Dan Denninghoff, HRL Laboratories
  
  Joseph Nedy, HRL Laboratories
  
  Hannah Robinson, HRL Laboratories
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Haidang Tran, HRL Laboratories
  
  Quang Lam, HRL Laboratories
  
  Luis Fortin, HRL Laboratories
  
  Florian Herrault, HRL Laboratories
  
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Foundos, G.

Northrop-Grumman SYNOPTICS, Charlotte, NC
- May 12, 2022 // 2:50pm
  
  16.5 Manufacturing Challenges of Czochralski Growth and Fabrication of 2-inch Semi-Insulating Beta Gallium Oxide Substrates
  
  John Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
  
  G. Foundos, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
  V, Gambin, Northrop-Grumman (AS), Redondo Beach, CA
  
  W. Everson, Penn State University, PA,
  
  C. Scott, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
  D. Synder, Penn State University
  
  A. Brady, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
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Fowler, Michele

Brewer Science
- May 11, 2022 // 5:10pm
  
  12.3 A Novel Photosensitive Permanent Bonding Material Designed for Polymer/Metal Hybrid Bonding Applications
  
  Michele Fowler, Brewer Science
  
  Mei Dong, Brewer Science
  
  Alice Guerrero, Brewer Science
  
  Baron Huang, Brewer Science
  
  Rama Puligadda, Brewer Science
  
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Friedrichs, Peter

Infineon Technologies, Neubiberg, Germany
- May 12, 2022 // 9:45am
  
  13.4 Power Devices Based on Silicon Carbide – How to Manage Them at System Level and How They Contribute to a Greener World for All of Us
  
  Peter Friedrichs, Infineon Technologies, Neubiberg, Germany
  
  Invited Presentation
  
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Gallagher, J. C.

U.S. Naval Research Laboratory
- May 12, 2022 // 3:20pm
  
  18.6 Chemical Mechanical Polishing of β-Ga2O3
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  W. Olsen, University of California, Los Angeles, CA USA
  
  X. Huang, Argonne National Laboratory
  
  M. Wojcik, Argonne National Laboratory
  
  J. C. Gallagher, U.S. Naval Research Laboratory
  
  Y. Wang, University of California, Los Angeles, CA USA
  
  Student Presentation
  
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Gambin, V,

Northrop-Grumman (AS), Redondo Beach, CA
- May 12, 2022 // 2:50pm
  
  16.5 Manufacturing Challenges of Czochralski Growth and Fabrication of 2-inch Semi-Insulating Beta Gallium Oxide Substrates
  
  John Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
  
  G. Foundos, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
  V, Gambin, Northrop-Grumman (AS), Redondo Beach, CA
  
  W. Everson, Penn State University, PA,
  
  C. Scott, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
  D. Synder, Penn State University
  
  A. Brady, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
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Gao, Z.

AIXTRON SE, Herzogenrath, Germany
- May 10, 2022 // 2:40pm
  
  2.3 Advanced MOCVD Technology for RF-HEMT Growth on SEMI-Standard Large-Area (111) Silicon Substrates
  
  C. Mauder, AIXTRON SE, Herzogenrath, Germany
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  Z. Gao, AIXTRON SE, Herzogenrath, Germany
  
  M. Marx, AIXTRON SE, Herzogenrath, Germany
  
  T. Zweipfennig, RWTH Aachen University, Germany
  
  J. Ehrler, RWTH Aachen University, Germany
  
  H. Kalisch, RWTH Aachen University, Germany
  
  J. Bolton, AMO GmbH, Aachen Germany
  
  M. Lemme, AMO GmbH, Aachen Germany
  
  A. Alian, imec vzw, Leuven, Belgium
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  M. Zhao, imec vzw, Leuven, Belgium
  
  Michael Heuken, AIXTRON SE
  
  A. Vescan, RWTH Aachen University, Germany
  
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Garcia, John

Quintessent, Goleta, CA,
- May 11, 2022 // 2:10pm
  
  9.2 Enabling bandwidth scaling for datacenter and AI/ML applications using III-V and silicon photonic devices
  
  Brian Koch, Quintessent, Goleta, CA,
  
  Michael Davenport, Quintessent, Goleta, CA,
  
  John Garcia, Quintessent, Goleta, CA,
  
  Alan Liu, Quintessent, Goleta, CA,
  
  Invited Presentation
  
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Gaur, Shri Saurabh

Ministry of Electronics & IT, New Delhi
- May 10, 2022 // 11:30am – 11:59am
  
  1.5 Enabling Compound Semiconductor Manufacturing Ecosystem in India
  
  Shri Saurabh Gaur, Ministry of Electronics & IT, New Delhi
  
  Invited Presentation
  
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Gebreyohannes, Amehayesus

BAE Systems
- May 12, 2022 // 3:20pm
  
  18.1 Polyimide Film Process Equipment Qualification
  
  Jose Diaz, BAE Systems Inc
  
  X. Yang, MEC, BAE Systems, IQE
  
  Amehayesus Gebreyohannes, BAE Systems
  
  Nitin Kalra, BAE Systems
  
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Geen, Matthew

IQE, Cardiff, UK
- May 11, 2022 // 12:00pm
  
  7.4 Impact of Strain-Induced Bow on the Manufacture of VCSELs on 150mm GaAs- and Ge-Substrate Wafers
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Thomas Peach, Cardiff University
  
  Craig Allford, Cardiff University
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University. IQE plc
  
  Peter M. Smowton, Cardiff University, IQE plc
  
  Student Presentation
  
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- May 11, 2022 // 2:40pm
  
  9.3 First Demonstration Of High Performance 940nm VCSELs Grown On 200mm Diameter Substrates
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Andrew Clark, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  Rodney Pelzel, IQE, Cardiff, UK
  
  Wang Wang, IQE, Cardiff, UK
  
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Geens, Karen

imec, Leuven, Belgium
- March 10, 2022 // 8:45am
  
  13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
  
  Cem Basceri, QROMIS, USA
  
  Vlad Odnoblyudov, QROMIS, USA
  
  O. Aktas, Sandia National Labs, Albuquerque, NM
  
  Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
  
  Karen Geens, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  D. Fahle, AIXTRON SE Germany
  
  Stefaan Decoutere, Imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  M. Heuken, AIXTRON SE Germany
  
  Invited Presentation
  
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Gillgrass, Sara

Cardiff University
- May 11, 2022 // 12:00pm
  
  7.4 Impact of Strain-Induced Bow on the Manufacture of VCSELs on 150mm GaAs- and Ge-Substrate Wafers
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Thomas Peach, Cardiff University
  
  Craig Allford, Cardiff University
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University. IQE plc
  
  Peter M. Smowton, Cardiff University, IQE plc
  
  Student Presentation
  
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Gomez, David

X-Celeprint, Inc.
- May 11, 2022 // 4:20pm
  
  12.1 Micro-Transfer Printing for Micro-Assembly of Heterogeneous Integrated Compound Semiconductor Components
  
  David Gomez, X-Celeprint, Inc.
  
  Tanya Moore, X-Celeprint, Inc.
  
  Alin Fecioru, X-Celeprint, Ltd., Cork, Ireland
  
  Kevin Oswalt, X-Celeprint, Research
  
  James Thostenson, X-Celeprint, Research
  
  Chris Reyes, X-Celeprint, Research
  
  Ron Cok, X-Celeprint, Research
  
  Invited Presentation
  
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Gonzalez, D.

University of Arkansas, Fayetteville
- May 12, 2022 // 2:50pm
  
  17.5 High-Temperature SiC Power Module with Integrated LTCC-Based Gate Driver
  
  P. Lai, University of Arkansas, Fayetteville
  
  S. Chinnaiyan, University of Arkansas, Fayetteville
  
  S. Ahmed, University of Arkansas, Fayetteville
  
  A. Mantooth, University of Arkansas, Fayetteville
  
  Z. Chen, University of Arkansas, Fayetteville
  
  D. Gonzalez, University of Arkansas, Fayetteville
  
  Student Presentation
  
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Goorsky, M.S.

University of California, Los Angeles, CA USA
- May 12, 2022 // 3:20pm
  
  18.6 Chemical Mechanical Polishing of β-Ga2O3
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  W. Olsen, University of California, Los Angeles, CA USA
  
  X. Huang, Argonne National Laboratory
  
  M. Wojcik, Argonne National Laboratory
  
  J. C. Gallagher, U.S. Naval Research Laboratory
  
  Y. Wang, University of California, Los Angeles, CA USA
  
  Student Presentation
  
  Abstract
  
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- May 12, 2022 // 3:20pm
  
  18.18 Reduction in Thermal Boundary Conductance of Annealed Direct Wafer Bonded GaN|Si Heterojunction Interfaces
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  V. Dragoi, EV Group
  
  Eric Guiot, SOITEC
  
  Raphael Caulmilone, SOITEC
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  X. Yan, University of California Irvine
  
  T. Pfeifer, University of Virginia Charlottesville
  
  N. Razek, EV Group and R-Ray Medical
  
  X. Pan, Soitec
  
  P. E. Hopkin, University of Virginia Charlottesville
  
  J. Tomko, University of Virginia Charlottesville
  
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Goutain, Eric

Kyocera SLD
- May 11, 2022 // 1:40pm
  
  9.1 High-Power GaN-Based Laser Diodes for Next Generation Applications
  
  James Raring, Kyocera SLD
  
  Paul Rudy, Kyocera SLD
  
  Eric Goutain, Kyocera SLD
  
  Alex Sztein, Kyocera SLD
  
  Thiago Melo, Kyocera SLD
  
  Dennis Van Den Broeck, Kyocera SLD
  
  Changmin Lee, Kyocera SLD
  
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Grabar, Robert

HRL Laboratories, Malibu, CA,
- May 12, 2022 // 9:15am
  
  13.3 Highly-Linear and Efficient mm-Wave GaN HEMT Technology
  
  Jeong-Sun Moon, HRL Laboratories, Malibu, CA,
  
  Robert Grabar, HRL Laboratories, Malibu, CA,
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Joe Tai, HRL Laboratories, Malibu, CA,
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Patrick Fay, University of Notre Dame
  
  Joel Wong, HRL Laboratories, Malibu, CA,
  
  Didiel Vazquez-Morales, HRL Laboratories, Malibu, CA,
  
  Chuong Dao, HRL Laboratories, Malibu, CA,
  
  Shyam Bharadwaj, HRL Laboratories, Malibu, CA,
  
  Nivedhita Venkatesan, University of Notre Dame
  
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Green, Andrew

Air Force Research Laboratory, Sensors Directorate
- May 11, 2022 // 11:40am
  
  8.3 Device Figure of Merit Performance of Scaled Gamma-Gate β-Ga2O3 MOSFETs
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Jeremiah Williams, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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- May 10, 2022 // 4:50pm
  
  4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
  
  G. Cueva, MACOM
  
  E. Werner, KBR, Wright-Patterson AFB
  
  A. Islam, Air Force Research Laboratory
  
  N. Miller, Air Force Research Laboratory
  
  A. Crespo, Air Force Research Laboratory, Sensors Directorate
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  D. Walker Jr., Air Force Research Laboratory
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  R. Fitch, Air Force Research Laboratory
  
  K. Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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Guerrero, Alice

Brewer Science
- May 11, 2022 // 5:10pm
  
  12.3 A Novel Photosensitive Permanent Bonding Material Designed for Polymer/Metal Hybrid Bonding Applications
  
  Michele Fowler, Brewer Science
  
  Mei Dong, Brewer Science
  
  Alice Guerrero, Brewer Science
  
  Baron Huang, Brewer Science
  
  Rama Puligadda, Brewer Science
  
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Guiot, Eric

SOITEC
- May 12, 2022 // 3:20pm
  
  18.18 Reduction in Thermal Boundary Conductance of Annealed Direct Wafer Bonded GaN|Si Heterojunction Interfaces
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  V. Dragoi, EV Group
  
  Eric Guiot, SOITEC
  
  Raphael Caulmilone, SOITEC
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  X. Yan, University of California Irvine
  
  T. Pfeifer, University of Virginia Charlottesville
  
  N. Razek, EV Group and R-Ray Medical
  
  X. Pan, Soitec
  
  P. E. Hopkin, University of Virginia Charlottesville
  
  J. Tomko, University of Virginia Charlottesville
  
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Guo, Jingshu

Xidian University, Xi'an, China
- May 10, 2022 // 4:50pm
  
  5.3 Normally-off InAlN/GaN HEMTs Fabricated by Atomic Layer Etching Gate Recess
  
  Siyu Liu, Xidian University, Xi'an, China
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
  Jiejie Zhu, Xidian University, Xi'an, China
  
  Minhan Mi, Xidian University
  
  Jingshu Guo, Xidian University, Xi'an, China
  
  Yue Hao, Xidian University, Xi'an, China
  
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- May 19, 2022 // 2:10pm
  
  17.3 Regrown Ohmic contact of InAlN/GaN HEMTs based on MOCVD
  
  Jingshu Guo, Xidian University, Xi'an, China
  
  Jiejie Zhu, Xidian University, Xi'an, China
  
  Siyu Liu, Xidian University, Xi'an, China
  
  Jiahao Xu, Xidian University, Xi'an, China
  
  X. Zhao, Massachusetts Institute of Technology
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
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Gutt, Thomas

Infineon Technologies, Neubiberg, Germany
- May 10, 2022 // 4:00pm
  
  4.1 Productive 4.0 – A Holistic Innovation Project Meant to Open the Potentials of Digital Industry Thomas Gutt
  
  Thomas Gutt, Infineon Technologies, Neubiberg, Germany
  
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Guy, O. J.

Swansea University, Swansea, UK
- May 12, 2022 // 3:20pm
  
  18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs
  
  Kevin Riddell, SPTS, Newport, UK
  
  A. Croot, SPTS, Newport, UK
  
  C. Bolton, SPTS, Newport, UK
  
  B. Jones, Swansea University, Swansea, UK
  
  F. Monaghan, Swansea University, Swansea, UK
  
  J. Mitchell, Swansea University, Swansea, UK
  
  M. R. Jennings, Swansea University, Swansea, UK
  
  O. J. Guy, Swansea University, Swansea, UK
  
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Hahn, H.

AIXTRON SE, Herzogenrath, Germany
- May 10, 2022 // 2:40pm
  
  2.3 Advanced MOCVD Technology for RF-HEMT Growth on SEMI-Standard Large-Area (111) Silicon Substrates
  
  C. Mauder, AIXTRON SE, Herzogenrath, Germany
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  Z. Gao, AIXTRON SE, Herzogenrath, Germany
  
  M. Marx, AIXTRON SE, Herzogenrath, Germany
  
  T. Zweipfennig, RWTH Aachen University, Germany
  
  J. Ehrler, RWTH Aachen University, Germany
  
  H. Kalisch, RWTH Aachen University, Germany
  
  J. Bolton, AMO GmbH, Aachen Germany
  
  M. Lemme, AMO GmbH, Aachen Germany
  
  A. Alian, imec vzw, Leuven, Belgium
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  M. Zhao, imec vzw, Leuven, Belgium
  
  Michael Heuken, AIXTRON SE
  
  A. Vescan, RWTH Aachen University, Germany
  
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- March 10, 2022 // 8:45am
  
  13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
  
  Cem Basceri, QROMIS, USA
  
  Vlad Odnoblyudov, QROMIS, USA
  
  O. Aktas, Sandia National Labs, Albuquerque, NM
  
  Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
  
  Karen Geens, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  D. Fahle, AIXTRON SE Germany
  
  Stefaan Decoutere, Imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  M. Heuken, AIXTRON SE Germany
  
  Invited Presentation
  
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Han, Min

Wavice Inc.
- May 10, 2022 // 2:50pm
  
  3.3 3.8 GHz 20W Compact 2 stage GaN HEMT Power Amplifier using IPD on HPSI SiC substrate
  
  Jinman Jin, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Min Han, Wavice Inc.
  
  Myoungkeun Song, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Myungsoo Park, Wavice Inc.,
  
  Sangmin Lee, Wavice Inc.
  
  Hogeun Lee, Wavice Inc.,
  
  Inseop Kim, Wavice Inc.,
  
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- May 10, 2022 // 5:30pm
  
  4.5 Electrical characteristics of Wavice GaN HEMT on 4” SiC with 0.2 μm gate process for X- and Ku- band applications
  
  Min Han, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
  
  Junhyeok Lee, Wavice Inc.,
  
  Kyeongjae Lee, Wavice Inc.,
  
  Hankyul Ji, Wavice Inc.,
  
  Hogeun Lee, Wavice Inc.,
  
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Hao, Yue

Xidian University, Xi'an, China
- May 10, 2022 // 4:50pm
  
  5.3 Normally-off InAlN/GaN HEMTs Fabricated by Atomic Layer Etching Gate Recess
  
  Siyu Liu, Xidian University, Xi'an, China
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
  Jiejie Zhu, Xidian University, Xi'an, China
  
  Minhan Mi, Xidian University
  
  Jingshu Guo, Xidian University, Xi'an, China
  
  Yue Hao, Xidian University, Xi'an, China
  
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- May 11, 2022 // 3:00pm
  
  10.4 AlN/GaN/InGaN Coupling Channel HEMTs with Improved SS Performance
  
  Yue Hao, Xidian University, Xi'an, China
  
  Hao Lu, Xidian University, Xi'an, China
  
  Bin Hou, Xidian University, Xi'an, China
  
  Ling Yang, Xidian University, Xi'an, China
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
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Harper, Robert

Compound Semiconductor Centre, Cardiff, UK
- May 12, 2022 // 11:30am
  
  14.3 Dynamic Ron in AlGaN/GaN Structure with Different Layer Thickness
  
  Hyun-Seop Kim, University of Bristol, Bristol, UK
  
  Hassan Hirshy, IQE, Cardiff, UK
  
  Andrew Withey, Nexperia Newport Wafer Fab, Newport, UK
  
  Robert Harper, Compound Semiconductor Centre, Cardiff, UK
  
  Sam Evans, Nexperia Newport Wafer Fab, Newport, UK
  
  Matin Kuball, University of Bristol, Bristol, UK,
  
  Michael J Uren, University of Bristol, Bristol, UK
  
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Hartmann, Luke

University of Illinois Urbana-Champagne
- May 12, 2022 // 3:20pm
  
  18.7 Role of Substrate on the Reverse Leakage Behavior of the Vertical GaN Devices
  
  Riley Vesto, University of Illinois at Urbana-Champaign
  
  Kyekyoon Kim, University of Illinois at Urbana-Champaign
  
  Matthew Pianfetti, University of Illinois Urbana-Champagne
  
  Luke Hartmann, University of Illinois Urbana-Champagne
  
  Rebekah Wilson, U.S, Army Construction Engineering Research Laboratory
  
  Hyungsoo Choi, University of Illinois Urbana-Champagne and Holonyak Micro and Nanotechnology Laboratory
  
  Student Presentation
  
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Haung, Chong Rong

Chang Gung University
- May 12, 2022 // 3:20pm
  
  18.15 Bilayer N-metal Lift-off Process on Thick DBRs Mesa for Low-Threshold VCSELs
  
  Chong Rong Haung, Chang Gung University
  
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- May 10, 2022 // 3:20pm
  
  18.16 Hole Injection Effect and Dynamic Characteristics Analysis of Normally-Off p-GaN HEMT with AlGaN Cap layer on Low Resistivity SiC substrate
  
  Chia-Hao Liu, Chang Gung University
  
  Chong Rong Haung, Chang Gung University
  
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- May 12, 2022 // 3:20pm
  
  18.17 Improved RF Characteristics of AlGaN/AlN/GaN HEMT by using 3C-SiC/Si Hybrid bond Substrate
  
  Chia-Hao Liu, Chang Gung University
  
  Chong Rong Haung, Chang Gung University
  
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Hendricks, Jessica

AFRL, Air Force Institute of Technology, Wright State University, Dayton, OH and Southwestern Ohio Council for Higher Education
- May 12, 2022 // 2:30pm
  
  16.4 Delta Doping β-Ga2O3 Grown Via Plasma Assisted Molecular Beam Epitaxy Using Germanium
  
  Thaddeus Asel, Air Force Research Laboratory, Wright Patterson AFB, OH, USA
  
  Shin Mou, Air Force Research Laboratory, Wright Patterson AFB, OH
  
  Erich Steinbrunner, Air Force Research Laboratory, Wright Patterson AFB, OH, USA and Wright State University, Dayton, OH
  
  Jessica Hendricks, AFRL, Air Force Institute of Technology, Wright State University, Dayton, OH and Southwestern Ohio Council for Higher Education
  
  Adam T. Neal, Air Force Research Laboratory, Wright Patterson AFB, OH
  
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Herrault, Florian

HRL Laboratories
- May 10, 2022 // 5:10pm
  
  4.4 Improving manufacturability of highly scaled RF GaN HEMTs
  
  Georges Siddiqi, HRL Laboratories
  
  Andrea Corrion, HRL Laboratories
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Michael Johnson, HRL Laboratories
  
  Dan Denninghoff, HRL Laboratories
  
  Joseph Nedy, HRL Laboratories
  
  Hannah Robinson, HRL Laboratories
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Haidang Tran, HRL Laboratories
  
  Quang Lam, HRL Laboratories
  
  Luis Fortin, HRL Laboratories
  
  Florian Herrault, HRL Laboratories
  
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Heuken, M.

AIXTRON SE Germany
- March 10, 2022 // 8:45am
  
  13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
  
  Cem Basceri, QROMIS, USA
  
  Vlad Odnoblyudov, QROMIS, USA
  
  O. Aktas, Sandia National Labs, Albuquerque, NM
  
  Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
  
  Karen Geens, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  D. Fahle, AIXTRON SE Germany
  
  Stefaan Decoutere, Imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  M. Heuken, AIXTRON SE Germany
  
  Invited Presentation
  
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Heuken, Michael

AIXTRON SE
- May 10, 2022 // 2:40pm
  
  2.3 Advanced MOCVD Technology for RF-HEMT Growth on SEMI-Standard Large-Area (111) Silicon Substrates
  
  C. Mauder, AIXTRON SE, Herzogenrath, Germany
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  Z. Gao, AIXTRON SE, Herzogenrath, Germany
  
  M. Marx, AIXTRON SE, Herzogenrath, Germany
  
  T. Zweipfennig, RWTH Aachen University, Germany
  
  J. Ehrler, RWTH Aachen University, Germany
  
  H. Kalisch, RWTH Aachen University, Germany
  
  J. Bolton, AMO GmbH, Aachen Germany
  
  M. Lemme, AMO GmbH, Aachen Germany
  
  A. Alian, imec vzw, Leuven, Belgium
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  M. Zhao, imec vzw, Leuven, Belgium
  
  Michael Heuken, AIXTRON SE
  
  A. Vescan, RWTH Aachen University, Germany
  
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Higuchi, T.

Momentive Technologies
- May 12, 2022 // 3:20pm
  
  18.3 Heater Performance Improvement with Ceramic Coatings for GaN MOCVD Process
  
  T. Yamamoto, Momentive Technologies
  
  B. Kozak, Momentive Technologies
  
  Y. Morikawa, Momentive Technologies
  
  T. Higuchi, Momentive Technologies
  
  Y. Matsui, Momentive Technologies
  
  D. Sabens, Momentive Technologies
  
  P. Schmidt-Sane, Momentive Technologies
  
  J. lennartz, Momentive Technologies
  
  W. Fan, Momentive Technologies
  
  C. Chen, Momentive Technologies
  
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Hilt, Oliver

Ferdinand-Braun-Institut, Berlin, Germany
- May 12, 2022 // 11:10am
  
  14.2 Areal Vertical-Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN-Based Devices
  
  Eldad Bahat Treidel, Ferdinand-Braun-Institut, Berlin, Germany
  
  Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
  
  Oliver Hilt, Ferdinand-Braun-Institut, Berlin, Germany
  
  Joachim Würfl, Ferdinand-Braun-Institut, Berlin, Germany
  
  Mihaela Wolf, Ferdinand-Braun-Institut, Berlin, Germany
  
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Hirshy, Hassan

IQE, Cardiff, UK
- May 12, 2022 // 11:30am
  
  14.3 Dynamic Ron in AlGaN/GaN Structure with Different Layer Thickness
  
  Hyun-Seop Kim, University of Bristol, Bristol, UK
  
  Hassan Hirshy, IQE, Cardiff, UK
  
  Andrew Withey, Nexperia Newport Wafer Fab, Newport, UK
  
  Robert Harper, Compound Semiconductor Centre, Cardiff, UK
  
  Sam Evans, Nexperia Newport Wafer Fab, Newport, UK
  
  Matin Kuball, University of Bristol, Bristol, UK,
  
  Michael J Uren, University of Bristol, Bristol, UK
  
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Honda, Yoshio

Institute of Materials and Systems for Sustainability, Nagoya University
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Hong, J.

Northrup GrumNorthrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Hooper, David

Oxford Instruments
- May 11, 2022 // 3:00pm
  
  9.4 Etching of GaAs/AlGaAs VCSEL Mesa for High Volume Production
  
  Katie Hore, Oxford Instruments Plasma Technology
  
  Ning Zhang, Oxford Instruments Plasma Technology
  
  Stephanie Baclet, Oxford Instruments Plasma Technology
  
  Ligang Deng, Oxford Instruments Plasma Technology
  
  David Hooper, Oxford Instruments
  
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Hopkin, P. E.

University of Virginia Charlottesville
- May 12, 2022 // 3:20pm
  
  18.18 Reduction in Thermal Boundary Conductance of Annealed Direct Wafer Bonded GaN|Si Heterojunction Interfaces
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  V. Dragoi, EV Group
  
  Eric Guiot, SOITEC
  
  Raphael Caulmilone, SOITEC
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  X. Yan, University of California Irvine
  
  T. Pfeifer, University of Virginia Charlottesville
  
  N. Razek, EV Group and R-Ray Medical
  
  X. Pan, Soitec
  
  P. E. Hopkin, University of Virginia Charlottesville
  
  J. Tomko, University of Virginia Charlottesville
  
  Student Presentation
  
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Hore, Katie

Oxford Instruments Plasma Technology
- May 11, 2022 // 3:00pm
  
  9.4 Etching of GaAs/AlGaAs VCSEL Mesa for High Volume Production
  
  Katie Hore, Oxford Instruments Plasma Technology
  
  Ning Zhang, Oxford Instruments Plasma Technology
  
  Stephanie Baclet, Oxford Instruments Plasma Technology
  
  Ligang Deng, Oxford Instruments Plasma Technology
  
  David Hooper, Oxford Instruments
  
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Hou, Bin

Xidian University, Xi'an, China
- May 11, 2022 // 3:00pm
  
  10.4 AlN/GaN/InGaN Coupling Channel HEMTs with Improved SS Performance
  
  Yue Hao, Xidian University, Xi'an, China
  
  Hao Lu, Xidian University, Xi'an, China
  
  Bin Hou, Xidian University, Xi'an, China
  
  Ling Yang, Xidian University, Xi'an, China
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
  Student Presentation
  
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Hou, D.

Global Communication Semiconductors, LLC
- May 11, 2022 // 5:30pm
  
  11.4 1E7 Hours MTTF At 200°C Of 100V RF AlGaN/GaN-SiC HEMT Through ALT Characterization
  
  Gabriele Formicone, Integra Technologies, Inc.
  
  J. Bell, Integra Technologies
  
  D. Hou, Global Communication Semiconductors, LLC
  
  S. Wang, Global Communication Semiconductors, Inc.
  
  D. Wang, Global Communication Semiconductors, Inc.
  
  J. Burger, Integra Technologies
  
  W. Cheng, Integra Technologies
  
  W. Fan, Momentive Technologies
  
  J. McKay, Global Communications
  
  D. Mohata, Global Communications
  
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Howell, Robert

Northrop Grumman Corporation
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Hsin, Yue-Ming

National Central University
- May 12, 2022 // 11:50am
  
  14.4 A PNP-GaN Gate AlGaN/GaN HEMT with Improved Gate Characteristics
  
  Meng-Hsuan Tsai, National Central University
  
  Chia-Jung Tsai, National Central University
  
  Xin-Rong You, National Central University
  
  Yue-Ming Hsin, National Central University
  
  Student Presentation
  
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Hsu, Jung-Hao

WIN Semiconductors Corp.
- May 10, 2022 // 4:00pm
  
  5.1 III-V Semiconductor Devices on 6-inch Wafer for sub-Terahertz Communications
  
  Jung-Tao Chung, WIN Semiconducotrs Corp
  
  Yu-An Liao, WIN Semiconductors Corp.
  
  Jung-Hao Hsu, WIN Semiconductors Corp.
  
  Hsi-Tsung Lin, WIN Semiconductors Corp.
  
  Shu-Hsiao Tsai, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp.
  
  Lung-Yi Tseng, WIN Semiconductors Corp.
  
  Chia-Ming Chang, WIN Semiconductors Corp.
  
  Invited Presentation
  
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Hu, Zongyang

Cornell University
- May 11, 2022 // 11:10am
  
  8.2 How to Unleash Power of Ga2O3?
  
  Xing Huili-(Grace), Cornell University
  
  Wenshen Li, Cornell University
  
  Zongyang Hu, Cornell University
  
  Kazuki Nomoto, Cornell University
  
  Debdeep Jena, Cornell University
  
  Invited Presentation
  
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Huang, Baron

Brewer Science
- May 11, 2022 // 5:10pm
  
  12.3 A Novel Photosensitive Permanent Bonding Material Designed for Polymer/Metal Hybrid Bonding Applications
  
  Michele Fowler, Brewer Science
  
  Mei Dong, Brewer Science
  
  Alice Guerrero, Brewer Science
  
  Baron Huang, Brewer Science
  
  Rama Puligadda, Brewer Science
  
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Huang, Forest

Keysight Technologies, Inc.
- May 10, 2022 // 4:30pm
  
  5.2 GaAsSb/InP DHBT Extrinsic Base Regrowth Using In-situ Hydrogen Plasma Surface Treatment and Molecular Beam Epitaxy
  
  Barry Wu, Keysight Technologies, Inc.
  
  Martin Dvorak, Keysight Technologies, Inc.
  
  Forest Huang, Keysight Technologies, Inc.
  
  Scott LaFrancois, Keysight Technologies, Inc.
  
  Mathias Bonse, Keysight Technologies, Inc.
  
  Evan Lobisser, Keysight Technologies, Inc.
  
  Masaya Iwamoto, Keysight Technologies, Inc.
  
  Ben Zaks, Keysight Technologies, Inc.
  
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Huang, X.

Argonne National Laboratory
- May 12, 2022 // 3:20pm
  
  18.6 Chemical Mechanical Polishing of β-Ga2O3
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  W. Olsen, University of California, Los Angeles, CA USA
  
  X. Huang, Argonne National Laboratory
  
  M. Wojcik, Argonne National Laboratory
  
  J. C. Gallagher, U.S. Naval Research Laboratory
  
  Y. Wang, University of California, Los Angeles, CA USA
  
  Student Presentation
  
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Hughes, Gary

Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
- May 10, 2022 // 4:50pm
  
  4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
  
  G. Cueva, MACOM
  
  E. Werner, KBR, Wright-Patterson AFB
  
  A. Islam, Air Force Research Laboratory
  
  N. Miller, Air Force Research Laboratory
  
  A. Crespo, Air Force Research Laboratory, Sensors Directorate
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  D. Walker Jr., Air Force Research Laboratory
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  R. Fitch, Air Force Research Laboratory
  
  K. Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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- May 11, 2022 // 2:40pm
  
  10.3 Optimization of GaN RF Switch Device Performance using AFRL GaN140 MMIC Process
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  E. Werner, KBR, Wright-Patterson AFB
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Michael Schuette, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  John L. Ebel, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
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Huynh, K.

University of California, Los Angeles, CA USA
- May 12, 2022 // 3:20pm
  
  18.6 Chemical Mechanical Polishing of β-Ga2O3
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  W. Olsen, University of California, Los Angeles, CA USA
  
  X. Huang, Argonne National Laboratory
  
  M. Wojcik, Argonne National Laboratory
  
  J. C. Gallagher, U.S. Naval Research Laboratory
  
  Y. Wang, University of California, Los Angeles, CA USA
  
  Student Presentation
  
  Abstract
  
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- May 12, 2022 // 3:20pm
  
  18.18 Reduction in Thermal Boundary Conductance of Annealed Direct Wafer Bonded GaN|Si Heterojunction Interfaces
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  V. Dragoi, EV Group
  
  Eric Guiot, SOITEC
  
  Raphael Caulmilone, SOITEC
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  X. Yan, University of California Irvine
  
  T. Pfeifer, University of Virginia Charlottesville
  
  N. Razek, EV Group and R-Ray Medical
  
  X. Pan, Soitec
  
  P. E. Hopkin, University of Virginia Charlottesville
  
  J. Tomko, University of Virginia Charlottesville
  
  Student Presentation
  
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Hwang, Kyungwook

Samsung Advanced Institute of Technology
- May 11, 2022 // 8:45am
  
  6.2 Technology and Future Perspectives of III-V Devices
  
  Woochul Jeon, Samsung Advanced Institute of Technology
  
  Jongseob Kim, Samsung Advanced Institute of Technology
  
  Kyungwook Hwang, Samsung Advanced Institute of Technology
  
  Sanghun Lee, Samsung Advanced Institute of Technology
  
  Jai Kwang Shin, Samsung Advanced Institute of Technology
  
  Yongsung Kim, Samsung Advanced Institute of Technology
  
  Jun Hee Choi, Samsung Advanced Institute of Technology
  
  Plenary Presentation
  
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Imanishi, Masayuki

Osaka University
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Islam, A.

Air Force Research Laboratory
- May 10, 2022 // 4:50pm
  
  4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
  
  G. Cueva, MACOM
  
  E. Werner, KBR, Wright-Patterson AFB
  
  A. Islam, Air Force Research Laboratory
  
  N. Miller, Air Force Research Laboratory
  
  A. Crespo, Air Force Research Laboratory, Sensors Directorate
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  D. Walker Jr., Air Force Research Laboratory
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  R. Fitch, Air Force Research Laboratory
  
  K. Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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Islam, Ahmad

Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
- May 11, 2022 // 2:40pm
  
  10.3 Optimization of GaN RF Switch Device Performance using AFRL GaN140 MMIC Process
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  E. Werner, KBR, Wright-Patterson AFB
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Michael Schuette, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  John L. Ebel, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
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- May 11, 2022 // 11:40am
  
  8.3 Device Figure of Merit Performance of Scaled Gamma-Gate β-Ga2O3 MOSFETs
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Jeremiah Williams, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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Iwamoto, Masaya

Keysight Technologies, Inc.
- May 10, 2022 // 4:30pm
  
  5.2 GaAsSb/InP DHBT Extrinsic Base Regrowth Using In-situ Hydrogen Plasma Surface Treatment and Molecular Beam Epitaxy
  
  Barry Wu, Keysight Technologies, Inc.
  
  Martin Dvorak, Keysight Technologies, Inc.
  
  Forest Huang, Keysight Technologies, Inc.
  
  Scott LaFrancois, Keysight Technologies, Inc.
  
  Mathias Bonse, Keysight Technologies, Inc.
  
  Evan Lobisser, Keysight Technologies, Inc.
  
  Masaya Iwamoto, Keysight Technologies, Inc.
  
  Ben Zaks, Keysight Technologies, Inc.
  
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J Uren, Michael

University of Bristol, Bristol, UK
- May 12, 2022 // 11:30am
  
  14.3 Dynamic Ron in AlGaN/GaN Structure with Different Layer Thickness
  
  Hyun-Seop Kim, University of Bristol, Bristol, UK
  
  Hassan Hirshy, IQE, Cardiff, UK
  
  Andrew Withey, Nexperia Newport Wafer Fab, Newport, UK
  
  Robert Harper, Compound Semiconductor Centre, Cardiff, UK
  
  Sam Evans, Nexperia Newport Wafer Fab, Newport, UK
  
  Matin Kuball, University of Bristol, Bristol, UK,
  
  Michael J Uren, University of Bristol, Bristol, UK
  
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J. Green, Andrew

Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
- May 11, 2022 // 2:40pm
  
  10.3 Optimization of GaN RF Switch Device Performance using AFRL GaN140 MMIC Process
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  E. Werner, KBR, Wright-Patterson AFB
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Michael Schuette, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  John L. Ebel, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
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J. Twitchen, Daniel

Element Six, Harwell, UK
- May 12, 2022 // 2:10pm
  
  16.3 Diamond Resistives – The Passive Way to Manage the Heat and Keep the VSWR Low at High Frequencies
  
  Firooz Faili, Element Six Technologies, Santa Clara, CA
  
  Thomas Obeloer, Element Six, Harwell, UK
  
  Daniel J. Twitchen, Element Six, Harwell, UK
  
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Jena, Debdeep

Cornell University
- May 11, 2022 // 11:10am
  
  8.2 How to Unleash Power of Ga2O3?
  
  Xing Huili-(Grace), Cornell University
  
  Wenshen Li, Cornell University
  
  Zongyang Hu, Cornell University
  
  Kazuki Nomoto, Cornell University
  
  Debdeep Jena, Cornell University
  
  Invited Presentation
  
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Jennings, M. R.

Swansea University, Swansea, UK
- May 12, 2022 // 3:20pm
  
  18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs
  
  Kevin Riddell, SPTS, Newport, UK
  
  A. Croot, SPTS, Newport, UK
  
  C. Bolton, SPTS, Newport, UK
  
  B. Jones, Swansea University, Swansea, UK
  
  F. Monaghan, Swansea University, Swansea, UK
  
  J. Mitchell, Swansea University, Swansea, UK
  
  M. R. Jennings, Swansea University, Swansea, UK
  
  O. J. Guy, Swansea University, Swansea, UK
  
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Jeon, Woochul

Samsung Advanced Institute of Technology
- May 11, 2022 // 8:45am
  
  6.2 Technology and Future Perspectives of III-V Devices
  
  Woochul Jeon, Samsung Advanced Institute of Technology
  
  Jongseob Kim, Samsung Advanced Institute of Technology
  
  Kyungwook Hwang, Samsung Advanced Institute of Technology
  
  Sanghun Lee, Samsung Advanced Institute of Technology
  
  Jai Kwang Shin, Samsung Advanced Institute of Technology
  
  Yongsung Kim, Samsung Advanced Institute of Technology
  
  Jun Hee Choi, Samsung Advanced Institute of Technology
  
  Plenary Presentation
  
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Jeong, Jeehun

Pusan National University of Korea
- May 12, 2022 // 3:20pm
  
  18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process
  
  Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Sua Choi, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Hojun Lee, Pusan National University of Korea
  
  Jeehun Jeong, Pusan National University of Korea
  
  Student Presentation
  
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Ji, D.

University of Bristol, Bristol, UK
- May 11, 2022 // 4:50pm
  
  11.2 Design and Manufacture of Edge Termination in Vertical GaN Diodes: Electric Field Distribution Probed by Second Harmonic Generation
  
  M.J. Uren, University of Bristol, Bristol, UK
  
  M. Kuball, University of Bristol, Bristol, UK
  
  B. Shankar, University of Bristol, Bristol, UK
  
  D. Ji, University of Bristol, Bristol, UK
  
  Y. Cao, University of Bristol, Bristol, UK
  
  Student Presentation
  
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Ji, Hankyul

Wavice Inc.,
- May 10, 2022 // 5:30pm
  
  4.5 Electrical characteristics of Wavice GaN HEMT on 4” SiC with 0.2 μm gate process for X- and Ku- band applications
  
  Min Han, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
  
  Junhyeok Lee, Wavice Inc.,
  
  Kyeongjae Lee, Wavice Inc.,
  
  Hankyul Ji, Wavice Inc.,
  
  Hogeun Lee, Wavice Inc.,
  
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Jin, Jinman

Wavice Inc.
- May 10, 2022 // 2:50pm
  
  3.3 3.8 GHz 20W Compact 2 stage GaN HEMT Power Amplifier using IPD on HPSI SiC substrate
  
  Jinman Jin, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Min Han, Wavice Inc.
  
  Myoungkeun Song, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Myungsoo Park, Wavice Inc.,
  
  Sangmin Lee, Wavice Inc.
  
  Hogeun Lee, Wavice Inc.,
  
  Inseop Kim, Wavice Inc.,
  
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Joel, Andrew

IQE, Cardiff, UK
- May 11, 2022 // 12:00pm
  
  7.4 Impact of Strain-Induced Bow on the Manufacture of VCSELs on 150mm GaAs- and Ge-Substrate Wafers
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Thomas Peach, Cardiff University
  
  Craig Allford, Cardiff University
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University. IQE plc
  
  Peter M. Smowton, Cardiff University, IQE plc
  
  Student Presentation
  
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- May 11, 2022 // 2:40pm
  
  9.3 First Demonstration Of High Performance 940nm VCSELs Grown On 200mm Diameter Substrates
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Andrew Clark, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  Rodney Pelzel, IQE, Cardiff, UK
  
  Wang Wang, IQE, Cardiff, UK
  
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Johnson, Andrew D.

IQE, Cardiff, UK
- May 11, 2022 // 12:00pm
  
  7.4 Impact of Strain-Induced Bow on the Manufacture of VCSELs on 150mm GaAs- and Ge-Substrate Wafers
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Thomas Peach, Cardiff University
  
  Craig Allford, Cardiff University
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University. IQE plc
  
  Peter M. Smowton, Cardiff University, IQE plc
  
  Student Presentation
  
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- May 11, 2022 // 2:40pm
  
  9.3 First Demonstration Of High Performance 940nm VCSELs Grown On 200mm Diameter Substrates
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Andrew Clark, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  Rodney Pelzel, IQE, Cardiff, UK
  
  Wang Wang, IQE, Cardiff, UK
  
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Johnson, Wayne

IQE MA, Taunton USA
- May 10, 2022 // 3:00pm
  
  2.4 Advances in Homoepitaxial GaN grown by MOCVD for Vertical Electronic Devices
  
  F. Kaess, IQE MA, Taunton USA
  
  O. Laboutin, IQE MA, Taunton USA
  
  H. Marchand, IQE MA, Taunton USA
  
  C.-K Kao, IQE MA, Taunton USA
  
  Wayne Johnson, IQE MA, Taunton USA
  
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Johnson, Wayne

IQE
- March 10, 2022 // 8:00am
  
  13.1 Compound Semiconductor Materials: From Atoms to Applications
  
  Wayne Johnson, IQE
  
  Plenary Presentation
Jolivet, E.

Yole Developpement, France
- May 10, 2022 // 2:00pm
  
  2.2 Epitaxy Equipment Towards a Billion-Dollar Mark
  
  V. Kumaresan, Yole Developpement, France
  
  E. Jolivet, Yole Developpement, France
  
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Jones, B.

Swansea University, Swansea, UK
- May 12, 2022 // 3:20pm
  
  18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs
  
  Kevin Riddell, SPTS, Newport, UK
  
  A. Croot, SPTS, Newport, UK
  
  C. Bolton, SPTS, Newport, UK
  
  B. Jones, Swansea University, Swansea, UK
  
  F. Monaghan, Swansea University, Swansea, UK
  
  J. Mitchell, Swansea University, Swansea, UK
  
  M. R. Jennings, Swansea University, Swansea, UK
  
  O. J. Guy, Swansea University, Swansea, UK
  
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Jones, Gregory

DARPA, Microsystems Technology Office
- May 10, 2022 // 10:30am – 10:59am
  
  1.3 Heterogeneous Heterostructures: A Path to Next Generation High Performance Compound Semiconductor Devices
  
  Thomas Kazior, DARPA, Microsystems Technology Office
  
  Gregory Jones, DARPA, Microsystems Technology Office
  
  S. Woodruff, Northrop Grumman Electronic Systems
  
  Invited Presentation
  
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Jun, Byoungchul

Wavice Inc.
- May 10, 2022 // 2:50pm
  
  3.3 3.8 GHz 20W Compact 2 stage GaN HEMT Power Amplifier using IPD on HPSI SiC substrate
  
  Jinman Jin, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Min Han, Wavice Inc.
  
  Myoungkeun Song, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Myungsoo Park, Wavice Inc.,
  
  Sangmin Lee, Wavice Inc.
  
  Hogeun Lee, Wavice Inc.,
  
  Inseop Kim, Wavice Inc.,
  
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- May 10, 2022 // 5:30pm
  
  4.5 Electrical characteristics of Wavice GaN HEMT on 4” SiC with 0.2 μm gate process for X- and Ku- band applications
  
  Min Han, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
  
  Junhyeok Lee, Wavice Inc.,
  
  Kyeongjae Lee, Wavice Inc.,
  
  Hankyul Ji, Wavice Inc.,
  
  Hogeun Lee, Wavice Inc.,
  
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K. Tiku, Shiban

Skyworks Solutions, Inc.
- May 10, 2022 // 5:30pm
  
  5.5 Optimizing Process Conditions for High Uniformity and Stability of Tantalum Nitride Films Stephanie Chang, Shiban Tiku, and Lam Luu-Henderson
  
  Shiban K. Tiku, Skyworks Solutions, Inc.
  
  Lam Luu-Henderson, Skyworks Solutions Inc.
  
  Stephanie Chang, Skyworks Solutions Inc.
  
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Kalra, Nitin

BAE Systems
- May 12, 2022 // 3:20pm
  
  18.1 Polyimide Film Process Equipment Qualification
  
  Jose Diaz, BAE Systems Inc
  
  X. Yang, MEC, BAE Systems, IQE
  
  Amehayesus Gebreyohannes, BAE Systems
  
  Nitin Kalra, BAE Systems
  
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Karboyan, Serge

Nexperia. Manchester, UK
- May 12, 2022 // 2:30pm
  
  17.4 Clip bonded CCPAK-1212: Engineering the next generation GaN products
  
  Serge Karboyan, Nexperia. Manchester, UK
  
  Adam Brown, Nexperia. Manchester, UK
  
  Bas Verheijen, Nexperia. Manchester, UK
  
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Kasu, Makoto

Saga University
- May 10, 2022 // 1:50pm
  
  2.1 Two-Inch High Quality Diamond Heteroepitaxial Growth on Sapphire for Power Devices
  
  Seong-Woo Kim, Adamant Namiki Precision Jewel Co., Ltd., Tokyo, Japan
  
  Makoto Kasu, Saga University
  
  Invited Presentation
  
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Kazior, Thomas

DARPA, Microsystems Technology Office
- May 10, 2022 // 10:30am – 10:59am
  
  1.3 Heterogeneous Heterostructures: A Path to Next Generation High Performance Compound Semiconductor Devices
  
  Thomas Kazior, DARPA, Microsystems Technology Office
  
  Gregory Jones, DARPA, Microsystems Technology Office
  
  S. Woodruff, Northrop Grumman Electronic Systems
  
  Invited Presentation
  
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Kelliher, J.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Kelly, Frank

University of Illinois at Urbana-Champaign
- May 12, 2022 // 1:50pm
  
  16.2 Investigation of Silicon Nitride Shadowed Selective Area Growth as an Enabling Technology for GaN Vertical Device Processing
  
  Matthew Landi, University of Illinois at Urbana-Champaign
  
  Frank Kelly, University of Illinois at Urbana-Champaign
  
  Kyekyoon Kim, University of Illinois at Urbana-Champaign
  
  Student Presentation
  
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- May 12, 2022 // 3:20pm
  
  18.10 Processing of Vertical GaN Power Devices via Silicon Nitride Shadowed Selective Area Growth
  
  Frank Kelly, University of Illinois at Urbana-Champaign
  
  Matthew Landi, University of Illinois at Urbana-Champaign
  
  Kyekyoon Kim, University of Illinois at Urbana-Champaign
  
  Student Presentation
  
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Kidera, Kazunori

Panasonic Corporation
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Kim, D.

Akoustis Technologies
- May 11, 2022 // 1:40pm
  
  10.1 Single Crystal AlScN-on-Silicon XBAW RF Filter Technology for Wide Bandwidth, High Frequency 5G and WiFi Applications
  
  Jeffrey Shealy, Akoustis Technologies
  
  Pinal Patel, Akoustis Technologies
  
  Michael D Hodge, Akoustis Technologies
  
  Mary Winters, Akoustis Technologies
  
  C. Moe, Akoustis Technologies
  
  J. Leathersich, Akoustis Technologies
  
  F. Bi, Akoustis Technologies
  
  D. Kim, Akoustis Technologies
  
  A. Kochhar, Akoustis Technologies
  
  E. Mehdizadeh, Akoustis Technologies
  
  Invited Presentation
  
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Kim, Hyun-Seop

University of Bristol, Bristol, UK
- May 12, 2022 // 11:30am
  
  14.3 Dynamic Ron in AlGaN/GaN Structure with Different Layer Thickness
  
  Hyun-Seop Kim, University of Bristol, Bristol, UK
  
  Hassan Hirshy, IQE, Cardiff, UK
  
  Andrew Withey, Nexperia Newport Wafer Fab, Newport, UK
  
  Robert Harper, Compound Semiconductor Centre, Cardiff, UK
  
  Sam Evans, Nexperia Newport Wafer Fab, Newport, UK
  
  Matin Kuball, University of Bristol, Bristol, UK,
  
  Michael J Uren, University of Bristol, Bristol, UK
  
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Kim, Inseop

Wavice Inc.,
- May 10, 2022 // 2:50pm
  
  3.3 3.8 GHz 20W Compact 2 stage GaN HEMT Power Amplifier using IPD on HPSI SiC substrate
  
  Jinman Jin, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Min Han, Wavice Inc.
  
  Myoungkeun Song, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Myungsoo Park, Wavice Inc.,
  
  Sangmin Lee, Wavice Inc.
  
  Hogeun Lee, Wavice Inc.,
  
  Inseop Kim, Wavice Inc.,
  
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Kim, Jongseob

Samsung Advanced Institute of Technology
- May 11, 2022 // 8:45am
  
  6.2 Technology and Future Perspectives of III-V Devices
  
  Woochul Jeon, Samsung Advanced Institute of Technology
  
  Jongseob Kim, Samsung Advanced Institute of Technology
  
  Kyungwook Hwang, Samsung Advanced Institute of Technology
  
  Sanghun Lee, Samsung Advanced Institute of Technology
  
  Jai Kwang Shin, Samsung Advanced Institute of Technology
  
  Yongsung Kim, Samsung Advanced Institute of Technology
  
  Jun Hee Choi, Samsung Advanced Institute of Technology
  
  Plenary Presentation
  
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Kim, Kyekyoon

University of Illinois at Urbana-Champaign
- May 12, 2022 // 1:50pm
  
  16.2 Investigation of Silicon Nitride Shadowed Selective Area Growth as an Enabling Technology for GaN Vertical Device Processing
  
  Matthew Landi, University of Illinois at Urbana-Champaign
  
  Frank Kelly, University of Illinois at Urbana-Champaign
  
  Kyekyoon Kim, University of Illinois at Urbana-Champaign
  
  Student Presentation
  
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- May 12, 2022 // 3:20pm
  
  18.7 Role of Substrate on the Reverse Leakage Behavior of the Vertical GaN Devices
  
  Riley Vesto, University of Illinois at Urbana-Champaign
  
  Kyekyoon Kim, University of Illinois at Urbana-Champaign
  
  Matthew Pianfetti, University of Illinois Urbana-Champagne
  
  Luke Hartmann, University of Illinois Urbana-Champagne
  
  Rebekah Wilson, U.S, Army Construction Engineering Research Laboratory
  
  Hyungsoo Choi, University of Illinois Urbana-Champagne and Holonyak Micro and Nanotechnology Laboratory
  
  Student Presentation
  
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- May 12, 2022 // 3:20pm
  
  18.10 Processing of Vertical GaN Power Devices via Silicon Nitride Shadowed Selective Area Growth
  
  Frank Kelly, University of Illinois at Urbana-Champaign
  
  Matthew Landi, University of Illinois at Urbana-Champaign
  
  Kyekyoon Kim, University of Illinois at Urbana-Champaign
  
  Student Presentation
  
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Kim, Seong-Woo

Adamant Namiki Precision Jewel Co., Ltd., Tokyo, Japan
- May 10, 2022 // 1:50pm
  
  2.1 Two-Inch High Quality Diamond Heteroepitaxial Growth on Sapphire for Power Devices
  
  Seong-Woo Kim, Adamant Namiki Precision Jewel Co., Ltd., Tokyo, Japan
  
  Makoto Kasu, Saga University
  
  Invited Presentation
  
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Kim, Yongsung

Samsung Advanced Institute of Technology
- May 11, 2022 // 8:45am
  
  6.2 Technology and Future Perspectives of III-V Devices
  
  Woochul Jeon, Samsung Advanced Institute of Technology
  
  Jongseob Kim, Samsung Advanced Institute of Technology
  
  Kyungwook Hwang, Samsung Advanced Institute of Technology
  
  Sanghun Lee, Samsung Advanced Institute of Technology
  
  Jai Kwang Shin, Samsung Advanced Institute of Technology
  
  Yongsung Kim, Samsung Advanced Institute of Technology
  
  Jun Hee Choi, Samsung Advanced Institute of Technology
  
  Plenary Presentation
  
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Koch, Brian

Quintessent, Goleta, CA,
- May 11, 2022 // 2:10pm
  
  9.2 Enabling bandwidth scaling for datacenter and AI/ML applications using III-V and silicon photonic devices
  
  Brian Koch, Quintessent, Goleta, CA,
  
  Michael Davenport, Quintessent, Goleta, CA,
  
  John Garcia, Quintessent, Goleta, CA,
  
  Alan Liu, Quintessent, Goleta, CA,
  
  Invited Presentation
  
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Kochhar, A.

Akoustis Technologies
- May 11, 2022 // 1:40pm
  
  10.1 Single Crystal AlScN-on-Silicon XBAW RF Filter Technology for Wide Bandwidth, High Frequency 5G and WiFi Applications
  
  Jeffrey Shealy, Akoustis Technologies
  
  Pinal Patel, Akoustis Technologies
  
  Michael D Hodge, Akoustis Technologies
  
  Mary Winters, Akoustis Technologies
  
  C. Moe, Akoustis Technologies
  
  J. Leathersich, Akoustis Technologies
  
  F. Bi, Akoustis Technologies
  
  D. Kim, Akoustis Technologies
  
  A. Kochhar, Akoustis Technologies
  
  E. Mehdizadeh, Akoustis Technologies
  
  Invited Presentation
  
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Kozak, B.

Momentive Technologies
- May 12, 2022 // 3:20pm
  
  18.3 Heater Performance Improvement with Ceramic Coatings for GaN MOCVD Process
  
  T. Yamamoto, Momentive Technologies
  
  B. Kozak, Momentive Technologies
  
  Y. Morikawa, Momentive Technologies
  
  T. Higuchi, Momentive Technologies
  
  Y. Matsui, Momentive Technologies
  
  D. Sabens, Momentive Technologies
  
  P. Schmidt-Sane, Momentive Technologies
  
  J. lennartz, Momentive Technologies
  
  W. Fan, Momentive Technologies
  
  C. Chen, Momentive Technologies
  
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Kraman, Mark

University of Illinois Urbana-Champagne
- May 11, 2022 // 3:20pm
  
  9.5 Impact of Diffusion Mask Strain on Impurity-Induced Disordered VCSELs Designed for Single-Fundamental-Mode Operation
  
  Patrick Su, University of Illinois at Urbana-Champaign
  
  John M Dallesasse, University of Illinois at Urbana-Champaign
  
  Mark Kraman, University of Illinois Urbana-Champagne
  
  Kevin P. Pikul, University of Illinois Urbana-Champagne
  
  Student Presentation
  
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Kuball, M.

University of Bristol, Bristol, UK
- May 11, 2022 // 4:50pm
  
  11.2 Design and Manufacture of Edge Termination in Vertical GaN Diodes: Electric Field Distribution Probed by Second Harmonic Generation
  
  M.J. Uren, University of Bristol, Bristol, UK
  
  M. Kuball, University of Bristol, Bristol, UK
  
  B. Shankar, University of Bristol, Bristol, UK
  
  D. Ji, University of Bristol, Bristol, UK
  
  Y. Cao, University of Bristol, Bristol, UK
  
  Student Presentation
  
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Kuball, Martin

University of Bristol
- May 11, 2022 // 4:50pm
  
  12.2 Differences in SiC Wafer Thermal Conductivity from Face-to-Face Dependent on Polishing
  
  Daniel Field, University of Bristol
  
  Martin Kuball, University of Bristol
  
  Filip Wach, University of Bristol
  
  Student Presentation
  
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Kuball, Matin

University of Bristol, Bristol, UK,
- May 12, 2022 // 3:20pm
  
  18.12 GaN-on-Si Membranes for Power Device Applications: Stress Evolution throughout Fabrication
  
  Jerome Cuenca, Cardiff University, Cardiff, UK
  
  Oliver Williams, Cardiff University, Cardiff, UK
  
  Matin Kuball, University of Bristol, Bristol, UK,
  
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- May 11, 2022 // 5:30pm
  
  12.4 Novel thermoreflectance-based method for in-situ die attach thermal conductivity assessment in packaged devices
  
  Zeina Abdallah, University of Bristol, Bristol, UK
  
  Nathawat Poopakdec, University of Bristol, Bristol, UK and Navaminda Kasatriyadhiraj Royal Air Force Academny
  
  Matin Kuball, University of Bristol, Bristol, UK,
  
  James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
  
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- May 12, 2022 // 11:30am
  
  14.3 Dynamic Ron in AlGaN/GaN Structure with Different Layer Thickness
  
  Hyun-Seop Kim, University of Bristol, Bristol, UK
  
  Hassan Hirshy, IQE, Cardiff, UK
  
  Andrew Withey, Nexperia Newport Wafer Fab, Newport, UK
  
  Robert Harper, Compound Semiconductor Centre, Cardiff, UK
  
  Sam Evans, Nexperia Newport Wafer Fab, Newport, UK
  
  Matin Kuball, University of Bristol, Bristol, UK,
  
  Michael J Uren, University of Bristol, Bristol, UK
  
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Kwon, Jihun

Wavice Inc.
- May 10, 2022 // 2:50pm
  
  3.3 3.8 GHz 20W Compact 2 stage GaN HEMT Power Amplifier using IPD on HPSI SiC substrate
  
  Jinman Jin, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Min Han, Wavice Inc.
  
  Myoungkeun Song, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Myungsoo Park, Wavice Inc.,
  
  Sangmin Lee, Wavice Inc.
  
  Hogeun Lee, Wavice Inc.,
  
  Inseop Kim, Wavice Inc.,
  
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- May 10, 2022 // 5:30pm
  
  4.5 Electrical characteristics of Wavice GaN HEMT on 4” SiC with 0.2 μm gate process for X- and Ku- band applications
  
  Min Han, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
  
  Junhyeok Lee, Wavice Inc.,
  
  Kyeongjae Lee, Wavice Inc.,
  
  Hankyul Ji, Wavice Inc.,
  
  Hogeun Lee, Wavice Inc.,
  
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LaFrancois, Scott

Keysight Technologies, Inc.
- May 10, 2022 // 4:30pm
  
  5.2 GaAsSb/InP DHBT Extrinsic Base Regrowth Using In-situ Hydrogen Plasma Surface Treatment and Molecular Beam Epitaxy
  
  Barry Wu, Keysight Technologies, Inc.
  
  Martin Dvorak, Keysight Technologies, Inc.
  
  Forest Huang, Keysight Technologies, Inc.
  
  Scott LaFrancois, Keysight Technologies, Inc.
  
  Mathias Bonse, Keysight Technologies, Inc.
  
  Evan Lobisser, Keysight Technologies, Inc.
  
  Masaya Iwamoto, Keysight Technologies, Inc.
  
  Ben Zaks, Keysight Technologies, Inc.
  
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Lagowski, Jacek

Semilab SDI, Tampa, FL,
- May 19, 2022 // 1:50pm
  
  17.2 Top Surface Edge Contact for Wafer Level Electrical Characterization of 2DEG in AlGaN/GaN on Semi-insulating Wafers
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  Bret Schrayer, Semilab SDI, Tampa, FL,
  
  Mark Benjamin, Lehighton Electronics Inc,
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
  Marshall Wilson, Semilab SDI, Tampa, FL,
  
  D. Nguyen, Semilab LEI, Lehighton, PA
  
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Lai, P.

University of Arkansas, Fayetteville
- May 12, 2022 // 2:50pm
  
  17.5 High-Temperature SiC Power Module with Integrated LTCC-Based Gate Driver
  
  P. Lai, University of Arkansas, Fayetteville
  
  S. Chinnaiyan, University of Arkansas, Fayetteville
  
  S. Ahmed, University of Arkansas, Fayetteville
  
  A. Mantooth, University of Arkansas, Fayetteville
  
  Z. Chen, University of Arkansas, Fayetteville
  
  D. Gonzalez, University of Arkansas, Fayetteville
  
  Student Presentation
  
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Lai, Yun

Eta Research
- May 12, 2022 // 3:20pm
  
  18.5 Warp of 4” Free-standing GaN Wafers
  
  Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
  
  Y. Yang, Global Communication Semiconductors, LLC
  
  Troy Baker, Eta Research
  
  Jinfeng Tang, Eta Research
  
  Yun Lai, Eta Research
  
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Landi, Matthew

University of Illinois at Urbana-Champaign
- May 12, 2022 // 1:50pm
  
  16.2 Investigation of Silicon Nitride Shadowed Selective Area Growth as an Enabling Technology for GaN Vertical Device Processing
  
  Matthew Landi, University of Illinois at Urbana-Champaign
  
  Frank Kelly, University of Illinois at Urbana-Champaign
  
  Kyekyoon Kim, University of Illinois at Urbana-Champaign
  
  Student Presentation
  
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- May 12, 2022 // 3:20pm
  
  18.10 Processing of Vertical GaN Power Devices via Silicon Nitride Shadowed Selective Area Growth
  
  Frank Kelly, University of Illinois at Urbana-Champaign
  
  Matthew Landi, University of Illinois at Urbana-Champaign
  
  Kyekyoon Kim, University of Illinois at Urbana-Champaign
  
  Student Presentation
  
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Laurence, Ted

2Lawrence Livermore National Laboratory, Livermore, CA
- May 12, 2022 // 3:20pm
  
  18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Ted Laurence, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Student Presentation
  
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Leathersich, J.

Akoustis Technologies
- May 11, 2022 // 1:40pm
  
  10.1 Single Crystal AlScN-on-Silicon XBAW RF Filter Technology for Wide Bandwidth, High Frequency 5G and WiFi Applications
  
  Jeffrey Shealy, Akoustis Technologies
  
  Pinal Patel, Akoustis Technologies
  
  Michael D Hodge, Akoustis Technologies
  
  Mary Winters, Akoustis Technologies
  
  C. Moe, Akoustis Technologies
  
  J. Leathersich, Akoustis Technologies
  
  F. Bi, Akoustis Technologies
  
  D. Kim, Akoustis Technologies
  
  A. Kochhar, Akoustis Technologies
  
  E. Mehdizadeh, Akoustis Technologies
  
  Invited Presentation
  
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Lee, Changmin

Kyocera SLD
- May 11, 2022 // 1:40pm
  
  9.1 High-Power GaN-Based Laser Diodes for Next Generation Applications
  
  James Raring, Kyocera SLD
  
  Paul Rudy, Kyocera SLD
  
  Eric Goutain, Kyocera SLD
  
  Alex Sztein, Kyocera SLD
  
  Thiago Melo, Kyocera SLD
  
  Dennis Van Den Broeck, Kyocera SLD
  
  Changmin Lee, Kyocera SLD
  
  Invited Presentation
  
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Lee, Hogeun

Wavice Inc.,
- May 10, 2022 // 5:30pm
  
  4.5 Electrical characteristics of Wavice GaN HEMT on 4” SiC with 0.2 μm gate process for X- and Ku- band applications
  
  Min Han, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
  
  Junhyeok Lee, Wavice Inc.,
  
  Kyeongjae Lee, Wavice Inc.,
  
  Hankyul Ji, Wavice Inc.,
  
  Hogeun Lee, Wavice Inc.,
  
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- May 10, 2022 // 2:50pm
  
  3.3 3.8 GHz 20W Compact 2 stage GaN HEMT Power Amplifier using IPD on HPSI SiC substrate
  
  Jinman Jin, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Min Han, Wavice Inc.
  
  Myoungkeun Song, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Myungsoo Park, Wavice Inc.,
  
  Sangmin Lee, Wavice Inc.
  
  Hogeun Lee, Wavice Inc.,
  
  Inseop Kim, Wavice Inc.,
  
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Lee, Hojun

Pusan National University of Korea
- May 12, 2022 // 3:20pm
  
  18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process
  
  Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Sua Choi, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Hojun Lee, Pusan National University of Korea
  
  Jeehun Jeong, Pusan National University of Korea
  
  Student Presentation
  
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Lee, Junhyeok

Wavice Inc.,
- May 10, 2022 // 5:30pm
  
  4.5 Electrical characteristics of Wavice GaN HEMT on 4” SiC with 0.2 μm gate process for X- and Ku- band applications
  
  Min Han, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
  
  Junhyeok Lee, Wavice Inc.,
  
  Kyeongjae Lee, Wavice Inc.,
  
  Hankyul Ji, Wavice Inc.,
  
  Hogeun Lee, Wavice Inc.,
  
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Lee, Kyeongjae

Wavice Inc.,
- May 10, 2022 // 5:30pm
  
  4.5 Electrical characteristics of Wavice GaN HEMT on 4” SiC with 0.2 μm gate process for X- and Ku- band applications
  
  Min Han, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
  
  Junhyeok Lee, Wavice Inc.,
  
  Kyeongjae Lee, Wavice Inc.,
  
  Hankyul Ji, Wavice Inc.,
  
  Hogeun Lee, Wavice Inc.,
  
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Lee, M.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Lee, Sanghun

Samsung Advanced Institute of Technology
- May 11, 2022 // 8:45am
  
  6.2 Technology and Future Perspectives of III-V Devices
  
  Woochul Jeon, Samsung Advanced Institute of Technology
  
  Jongseob Kim, Samsung Advanced Institute of Technology
  
  Kyungwook Hwang, Samsung Advanced Institute of Technology
  
  Sanghun Lee, Samsung Advanced Institute of Technology
  
  Jai Kwang Shin, Samsung Advanced Institute of Technology
  
  Yongsung Kim, Samsung Advanced Institute of Technology
  
  Jun Hee Choi, Samsung Advanced Institute of Technology
  
  Plenary Presentation
  
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Lee, Sangmin

Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
Lee, Sangmin

Wavice Inc.
- May 10, 2022 // 2:50pm
  
  3.3 3.8 GHz 20W Compact 2 stage GaN HEMT Power Amplifier using IPD on HPSI SiC substrate
  
  Jinman Jin, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Min Han, Wavice Inc.
  
  Myoungkeun Song, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Myungsoo Park, Wavice Inc.,
  
  Sangmin Lee, Wavice Inc.
  
  Hogeun Lee, Wavice Inc.,
  
  Inseop Kim, Wavice Inc.,
  
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lennartz, J.

Momentive Technologies
- May 12, 2022 // 3:20pm
  
  18.3 Heater Performance Improvement with Ceramic Coatings for GaN MOCVD Process
  
  T. Yamamoto, Momentive Technologies
  
  B. Kozak, Momentive Technologies
  
  Y. Morikawa, Momentive Technologies
  
  T. Higuchi, Momentive Technologies
  
  Y. Matsui, Momentive Technologies
  
  D. Sabens, Momentive Technologies
  
  P. Schmidt-Sane, Momentive Technologies
  
  J. lennartz, Momentive Technologies
  
  W. Fan, Momentive Technologies
  
  C. Chen, Momentive Technologies
  
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Lewis, R.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Li, Jiang

Skyworks Solutions, Inc.
- May 12, 2022 // 3:20pm
  
  18.8 Solution-Phase Processed Zinc Oxide Vertical Schottky Diode using Flow-limited Field-Injection Electrostatic Spraying
  
  Samuel Mony, Skyworks Solutions, Inc.
  
  Jiang Li, Skyworks Solutions, Inc.
  
  Nercy Ebrahimi, Skyworks Solution Inc.
  
  Mohammadsadegh Beheshti, Skyworks Solutions Inc.
  
  Student Presentation
  
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- May 12, 2022 // 3:20pm
  
  18.9 Optimization in Noble Metal Hard Mask Selectivity in Chlorine-Based Plasma Etch
  
  Mohammadsadegh Beheshti, Skyworks Solutions Inc.
  
  Samuel Mony, Skyworks Solutions, Inc.
  
  Jiang Li, Skyworks Solutions, Inc.
  
  Nercy Ebrahimi, Skyworks Solution Inc.
  
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Li, Wenshen

Cornell University
- May 11, 2022 // 11:10am
  
  8.2 How to Unleash Power of Ga2O3?
  
  Xing Huili-(Grace), Cornell University
  
  Wenshen Li, Cornell University
  
  Zongyang Hu, Cornell University
  
  Kazuki Nomoto, Cornell University
  
  Debdeep Jena, Cornell University
  
  Invited Presentation
  
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Lian, F.

Northrop Grumman (AS), Redondo Beach, CA, USA
- May 12, 2022 // 10:40am
  
  15.1 Overcoming Challenges in Advanced InP HEMT Manufacturing
  
  F. Lian, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  I. Smorchkova, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  X. B. Mci, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  H. Ma, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  W. R. Deal, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  W Yoshida, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  Invited Presentation
  
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Liao, M. E.

University of California, Los Angeles, CA USA
- May 12, 2022 // 3:20pm
  
  18.6 Chemical Mechanical Polishing of β-Ga2O3
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  W. Olsen, University of California, Los Angeles, CA USA
  
  X. Huang, Argonne National Laboratory
  
  M. Wojcik, Argonne National Laboratory
  
  J. C. Gallagher, U.S. Naval Research Laboratory
  
  Y. Wang, University of California, Los Angeles, CA USA
  
  Student Presentation
  
  Abstract
  
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- May 12, 2022 // 3:20pm
  
  18.18 Reduction in Thermal Boundary Conductance of Annealed Direct Wafer Bonded GaN|Si Heterojunction Interfaces
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  V. Dragoi, EV Group
  
  Eric Guiot, SOITEC
  
  Raphael Caulmilone, SOITEC
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  X. Yan, University of California Irvine
  
  T. Pfeifer, University of Virginia Charlottesville
  
  N. Razek, EV Group and R-Ray Medical
  
  X. Pan, Soitec
  
  P. E. Hopkin, University of Virginia Charlottesville
  
  J. Tomko, University of Virginia Charlottesville
  
  Student Presentation
  
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Liao, Yu-An

WIN Semiconductors Corp.
- May 10, 2022 // 4:00pm
  
  5.1 III-V Semiconductor Devices on 6-inch Wafer for sub-Terahertz Communications
  
  Jung-Tao Chung, WIN Semiconducotrs Corp
  
  Yu-An Liao, WIN Semiconductors Corp.
  
  Jung-Hao Hsu, WIN Semiconductors Corp.
  
  Hsi-Tsung Lin, WIN Semiconductors Corp.
  
  Shu-Hsiao Tsai, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp.
  
  Lung-Yi Tseng, WIN Semiconductors Corp.
  
  Chia-Ming Chang, WIN Semiconductors Corp.
  
  Invited Presentation
  
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Liddy, Kyle

Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
- May 10, 2022 // 4:50pm
  
  4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
  
  G. Cueva, MACOM
  
  E. Werner, KBR, Wright-Patterson AFB
  
  A. Islam, Air Force Research Laboratory
  
  N. Miller, Air Force Research Laboratory
  
  A. Crespo, Air Force Research Laboratory, Sensors Directorate
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  D. Walker Jr., Air Force Research Laboratory
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  R. Fitch, Air Force Research Laboratory
  
  K. Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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- May 11, 2022 // 11:40am
  
  8.3 Device Figure of Merit Performance of Scaled Gamma-Gate β-Ga2O3 MOSFETs
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Jeremiah Williams, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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Lim, Sung Wook

IQE, Cardiff, UK
- May 11, 2022 // 12:00pm
  
  7.4 Impact of Strain-Induced Bow on the Manufacture of VCSELs on 150mm GaAs- and Ge-Substrate Wafers
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Thomas Peach, Cardiff University
  
  Craig Allford, Cardiff University
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University. IQE plc
  
  Peter M. Smowton, Cardiff University, IQE plc
  
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- May 11, 2022 // 2:40pm
  
  9.3 First Demonstration Of High Performance 940nm VCSELs Grown On 200mm Diameter Substrates
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Andrew Clark, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  Rodney Pelzel, IQE, Cardiff, UK
  
  Wang Wang, IQE, Cardiff, UK
  
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Lin, Cheng-Kuo

WIN Semiconductors Corp
- May 10, 2022 // 4:30pm
  
  4.2 Machine Learning-Based Methods For In-Time Monitoring Equipment Conditions Wei-You Chen
  
  Wei-You Chen, WIN Semiconductors Corp.
  
  Min-Chung Chuang, WIN Semiconductors Corp.
  
  Yu-Min Hsu, WIN Semiconductors Corp.
  
  Chi-Hsiang Kuo, WIN Semiconductors Corp.
  
  Cheng-Kuo Lin, WIN Semiconductors Corp
  
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Lin, Cheng-Kuo

WIN Semiconductors Corp.
- May 10, 2022 // 4:00pm
  
  5.1 III-V Semiconductor Devices on 6-inch Wafer for sub-Terahertz Communications
  
  Jung-Tao Chung, WIN Semiconducotrs Corp
  
  Yu-An Liao, WIN Semiconductors Corp.
  
  Jung-Hao Hsu, WIN Semiconductors Corp.
  
  Hsi-Tsung Lin, WIN Semiconductors Corp.
  
  Shu-Hsiao Tsai, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp.
  
  Lung-Yi Tseng, WIN Semiconductors Corp.
  
  Chia-Ming Chang, WIN Semiconductors Corp.
  
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Lin, Hsi-Tsung

WIN Semiconductors Corp.
- May 10, 2022 // 4:00pm
  
  5.1 III-V Semiconductor Devices on 6-inch Wafer for sub-Terahertz Communications
  
  Jung-Tao Chung, WIN Semiconducotrs Corp
  
  Yu-An Liao, WIN Semiconductors Corp.
  
  Jung-Hao Hsu, WIN Semiconductors Corp.
  
  Hsi-Tsung Lin, WIN Semiconductors Corp.
  
  Shu-Hsiao Tsai, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp.
  
  Lung-Yi Tseng, WIN Semiconductors Corp.
  
  Chia-Ming Chang, WIN Semiconductors Corp.
  
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Lin, Yin-Hsiang

WIN Semiconductors Corp.
- May 11, 2022 // 11:40am
  
  7.3 Reliability Assessment of 940 nm VCSEL Array based on Pulsed Mode Thermal Analysis
  
  Mingwei Tsai, WIN semiconductors
  
  Yin-Hsiang Lin, WIN Semiconductors Corp.
  
  Chun-Tse Chang, WIN Semiconductors Corp.
  
  Kai-Lun Chi, WIN Semiconductors Corp.
  
  Lap-Sum Yip, WIN Semiconductors Corp.
  
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Liu, Alan

Quintessent, Goleta, CA,
- May 11, 2022 // 2:10pm
  
  9.2 Enabling bandwidth scaling for datacenter and AI/ML applications using III-V and silicon photonic devices
  
  Brian Koch, Quintessent, Goleta, CA,
  
  Michael Davenport, Quintessent, Goleta, CA,
  
  John Garcia, Quintessent, Goleta, CA,
  
  Alan Liu, Quintessent, Goleta, CA,
  
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Liu, Chia-Hao

Chang Gung University
- May 10, 2022 // 3:20pm
  
  18.16 Hole Injection Effect and Dynamic Characteristics Analysis of Normally-Off p-GaN HEMT with AlGaN Cap layer on Low Resistivity SiC substrate
  
  Chia-Hao Liu, Chang Gung University
  
  Chong Rong Haung, Chang Gung University
  
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- May 12, 2022 // 3:20pm
  
  18.17 Improved RF Characteristics of AlGaN/AlN/GaN HEMT by using 3C-SiC/Si Hybrid bond Substrate
  
  Chia-Hao Liu, Chang Gung University
  
  Chong Rong Haung, Chang Gung University
  
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- May 12, 2022 // 3:20pm
  
  18.15 Bilayer N-metal Lift-off Process on Thick DBRs Mesa for Low-Threshold VCSELs
  
  Chong Rong Haung, Chang Gung University
  
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Liu, Siyu

Xidian University, Xi'an, China
- May 10, 2022 // 4:50pm
  
  5.3 Normally-off InAlN/GaN HEMTs Fabricated by Atomic Layer Etching Gate Recess
  
  Siyu Liu, Xidian University, Xi'an, China
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
  Jiejie Zhu, Xidian University, Xi'an, China
  
  Minhan Mi, Xidian University
  
  Jingshu Guo, Xidian University, Xi'an, China
  
  Yue Hao, Xidian University, Xi'an, China
  
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- May 19, 2022 // 2:10pm
  
  17.3 Regrown Ohmic contact of InAlN/GaN HEMTs based on MOCVD
  
  Jingshu Guo, Xidian University, Xi'an, China
  
  Jiejie Zhu, Xidian University, Xi'an, China
  
  Siyu Liu, Xidian University, Xi'an, China
  
  Jiahao Xu, Xidian University, Xi'an, China
  
  X. Zhao, Massachusetts Institute of Technology
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
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Lobisser, Evan

Keysight Technologies, Inc.
- May 10, 2022 // 4:30pm
  
  5.2 GaAsSb/InP DHBT Extrinsic Base Regrowth Using In-situ Hydrogen Plasma Surface Treatment and Molecular Beam Epitaxy
  
  Barry Wu, Keysight Technologies, Inc.
  
  Martin Dvorak, Keysight Technologies, Inc.
  
  Forest Huang, Keysight Technologies, Inc.
  
  Scott LaFrancois, Keysight Technologies, Inc.
  
  Mathias Bonse, Keysight Technologies, Inc.
  
  Evan Lobisser, Keysight Technologies, Inc.
  
  Masaya Iwamoto, Keysight Technologies, Inc.
  
  Ben Zaks, Keysight Technologies, Inc.
  
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Lu, Hao

Xidian University, Xi'an, China
- May 11, 2022 // 3:00pm
  
  10.4 AlN/GaN/InGaN Coupling Channel HEMTs with Improved SS Performance
  
  Yue Hao, Xidian University, Xi'an, China
  
  Hao Lu, Xidian University, Xi'an, China
  
  Bin Hou, Xidian University, Xi'an, China
  
  Ling Yang, Xidian University, Xi'an, China
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
  Student Presentation
  
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Luo, Xiaorong

University of Electronic Science and Technology of China, Chengdu, China
- May 12, 2022 // 3:20pm
  
  18.5 Warp of 4” Free-standing GaN Wafers
  
  Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
  
  Y. Yang, Global Communication Semiconductors, LLC
  
  Troy Baker, Eta Research
  
  Jinfeng Tang, Eta Research
  
  Yun Lai, Eta Research
  
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Luu-Henderson, Lam

Skyworks Solutions Inc.
- May 10, 2022 // 5:30pm
  
  5.5 Optimizing Process Conditions for High Uniformity and Stability of Tantalum Nitride Films Stephanie Chang, Shiban Tiku, and Lam Luu-Henderson
  
  Shiban K. Tiku, Skyworks Solutions, Inc.
  
  Lam Luu-Henderson, Skyworks Solutions Inc.
  
  Stephanie Chang, Skyworks Solutions Inc.
  
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M Dallesasse, John

University of Illinois at Urbana-Champaign
- May 11, 2022 // 3:20pm
  
  9.5 Impact of Diffusion Mask Strain on Impurity-Induced Disordered VCSELs Designed for Single-Fundamental-Mode Operation
  
  Patrick Su, University of Illinois at Urbana-Champaign
  
  John M Dallesasse, University of Illinois at Urbana-Champaign
  
  Mark Kraman, University of Illinois Urbana-Champagne
  
  Kevin P. Pikul, University of Illinois Urbana-Champagne
  
  Student Presentation
  
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Ma, H.

Northrop Grumman (AS), Redondo Beach, CA, USA
- May 12, 2022 // 10:40am
  
  15.1 Overcoming Challenges in Advanced InP HEMT Manufacturing
  
  F. Lian, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  I. Smorchkova, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  X. B. Mci, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  H. Ma, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  W. R. Deal, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  W Yoshida, Northrop Grumman (AS), Redondo Beach, CA, USA
  
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Mantooth, A.

University of Arkansas, Fayetteville
- May 12, 2022 // 2:50pm
  
  17.5 High-Temperature SiC Power Module with Integrated LTCC-Based Gate Driver
  
  P. Lai, University of Arkansas, Fayetteville
  
  S. Chinnaiyan, University of Arkansas, Fayetteville
  
  S. Ahmed, University of Arkansas, Fayetteville
  
  A. Mantooth, University of Arkansas, Fayetteville
  
  Z. Chen, University of Arkansas, Fayetteville
  
  D. Gonzalez, University of Arkansas, Fayetteville
  
  Student Presentation
  
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Marinskiy, Dmitriy

Semilab SDI, Tampa, FL,
- May 19, 2022 // 1:50pm
  
  17.2 Top Surface Edge Contact for Wafer Level Electrical Characterization of 2DEG in AlGaN/GaN on Semi-insulating Wafers
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  Bret Schrayer, Semilab SDI, Tampa, FL,
  
  Mark Benjamin, Lehighton Electronics Inc,
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
  Marshall Wilson, Semilab SDI, Tampa, FL,
  
  D. Nguyen, Semilab LEI, Lehighton, PA
  
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Marrakchi El Fellah, A.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Mason, J.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Matias, Vladimir

iBeam Materials, Santa Fe, NM,
- May 12, 2022 // 1:20pm
  
  16.1 Roll-to-roll Manufacturing of Epi-GaN Sheets on Metal Foil for LEDs and Transistor Devices
  
  Vladimir Matias, iBeam Materials, Santa Fe, NM,
  
  Chris Sheehan, iBeam Materials, Santa Fe, NM,
  
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Matsui, Y.

Momentive Technologies
- May 12, 2022 // 3:20pm
  
  18.3 Heater Performance Improvement with Ceramic Coatings for GaN MOCVD Process
  
  T. Yamamoto, Momentive Technologies
  
  B. Kozak, Momentive Technologies
  
  Y. Morikawa, Momentive Technologies
  
  T. Higuchi, Momentive Technologies
  
  Y. Matsui, Momentive Technologies
  
  D. Sabens, Momentive Technologies
  
  P. Schmidt-Sane, Momentive Technologies
  
  J. lennartz, Momentive Technologies
  
  W. Fan, Momentive Technologies
  
  C. Chen, Momentive Technologies
  
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Mauder, C.

AIXTRON SE, Herzogenrath, Germany
- May 10, 2022 // 2:40pm
  
  2.3 Advanced MOCVD Technology for RF-HEMT Growth on SEMI-Standard Large-Area (111) Silicon Substrates
  
  C. Mauder, AIXTRON SE, Herzogenrath, Germany
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  Z. Gao, AIXTRON SE, Herzogenrath, Germany
  
  M. Marx, AIXTRON SE, Herzogenrath, Germany
  
  T. Zweipfennig, RWTH Aachen University, Germany
  
  J. Ehrler, RWTH Aachen University, Germany
  
  H. Kalisch, RWTH Aachen University, Germany
  
  J. Bolton, AMO GmbH, Aachen Germany
  
  M. Lemme, AMO GmbH, Aachen Germany
  
  A. Alian, imec vzw, Leuven, Belgium
  
  B. Parvais, imec vzw, Leuven, Belgium
  
  M. Zhao, imec vzw, Leuven, Belgium
  
  Michael Heuken, AIXTRON SE
  
  A. Vescan, RWTH Aachen University, Germany
  
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Mci, X. B.

Northrop Grumman (AS), Redondo Beach, CA, USA
- May 12, 2022 // 10:40am
  
  15.1 Overcoming Challenges in Advanced InP HEMT Manufacturing
  
  F. Lian, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  I. Smorchkova, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  X. B. Mci, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  H. Ma, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  W. R. Deal, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  W Yoshida, Northrop Grumman (AS), Redondo Beach, CA, USA
  
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McKay, J.

Global Communications
- May 11, 2022 // 5:30pm
  
  11.4 1E7 Hours MTTF At 200°C Of 100V RF AlGaN/GaN-SiC HEMT Through ALT Characterization
  
  Gabriele Formicone, Integra Technologies, Inc.
  
  J. Bell, Integra Technologies
  
  D. Hou, Global Communication Semiconductors, LLC
  
  S. Wang, Global Communication Semiconductors, Inc.
  
  D. Wang, Global Communication Semiconductors, Inc.
  
  J. Burger, Integra Technologies
  
  W. Cheng, Integra Technologies
  
  W. Fan, Momentive Technologies
  
  J. McKay, Global Communications
  
  D. Mohata, Global Communications
  
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Mehdizadeh, E.

Akoustis Technologies
- May 11, 2022 // 1:40pm
  
  10.1 Single Crystal AlScN-on-Silicon XBAW RF Filter Technology for Wide Bandwidth, High Frequency 5G and WiFi Applications
  
  Jeffrey Shealy, Akoustis Technologies
  
  Pinal Patel, Akoustis Technologies
  
  Michael D Hodge, Akoustis Technologies
  
  Mary Winters, Akoustis Technologies
  
  C. Moe, Akoustis Technologies
  
  J. Leathersich, Akoustis Technologies
  
  F. Bi, Akoustis Technologies
  
  D. Kim, Akoustis Technologies
  
  A. Kochhar, Akoustis Technologies
  
  E. Mehdizadeh, Akoustis Technologies
  
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Melo, Thiago

Kyocera SLD
- May 11, 2022 // 1:40pm
  
  9.1 High-Power GaN-Based Laser Diodes for Next Generation Applications
  
  James Raring, Kyocera SLD
  
  Paul Rudy, Kyocera SLD
  
  Eric Goutain, Kyocera SLD
  
  Alex Sztein, Kyocera SLD
  
  Thiago Melo, Kyocera SLD
  
  Dennis Van Den Broeck, Kyocera SLD
  
  Changmin Lee, Kyocera SLD
  
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Meuchel, Craig

Classone Technology
- May 12, 2022 // 3:20pm
  
  18.4 Using End Point Detection When Wet Processing Compound Semiconductor Substrates
  
  Craig Meuchel, Classone Technology
  
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Mi, Minhan

Xidian University
- May 10, 2022 // 4:50pm
  
  5.3 Normally-off InAlN/GaN HEMTs Fabricated by Atomic Layer Etching Gate Recess
  
  Siyu Liu, Xidian University, Xi'an, China
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
  Jiejie Zhu, Xidian University, Xi'an, China
  
  Minhan Mi, Xidian University
  
  Jingshu Guo, Xidian University, Xi'an, China
  
  Yue Hao, Xidian University, Xi'an, China
  
  Student Presentation
  
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Miller, M. J.

Skyworks Solutions Inc.
- May 12, 2022 // 11:10am
  
  15.2 BiHEMT Idss Control for Yield Improvement
  
  Eric Finchem, MACOM
  
  Dylan Bartle, Skyworks Solutions Inc.
  
  Sam Mony, Skyworks Solution Inc.
  
  M. J. Miller, Skyworks Solutions Inc.
  
  S. Singh, Skyworks Solutions Inc.
  
  A. Chao, Skyworks Solutions Inc.
  
  A. Canlas, Skyworks Solutions Inc.
  
  E. Burke, Skyworks Solutions Inc.
  
  C. Munoz, Skyworks Solutions Inc.
  
  M. A. Zeeshan, Skyworks Solutions Inc.
  
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Miller, N.

Air Force Research Laboratory
- May 10, 2022 // 4:50pm
  
  4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
  
  G. Cueva, MACOM
  
  E. Werner, KBR, Wright-Patterson AFB
  
  A. Islam, Air Force Research Laboratory
  
  N. Miller, Air Force Research Laboratory
  
  A. Crespo, Air Force Research Laboratory, Sensors Directorate
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  D. Walker Jr., Air Force Research Laboratory
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  R. Fitch, Air Force Research Laboratory
  
  K. Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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Mishima, Tomoyoshi

Osaka University
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Mitchell, J.

Swansea University, Swansea, UK
- May 12, 2022 // 3:20pm
  
  18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs
  
  Kevin Riddell, SPTS, Newport, UK
  
  A. Croot, SPTS, Newport, UK
  
  C. Bolton, SPTS, Newport, UK
  
  B. Jones, Swansea University, Swansea, UK
  
  F. Monaghan, Swansea University, Swansea, UK
  
  J. Mitchell, Swansea University, Swansea, UK
  
  M. R. Jennings, Swansea University, Swansea, UK
  
  O. J. Guy, Swansea University, Swansea, UK
  
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Mlack, J.T.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Moe, C.

Akoustis Technologies
- May 11, 2022 // 1:40pm
  
  10.1 Single Crystal AlScN-on-Silicon XBAW RF Filter Technology for Wide Bandwidth, High Frequency 5G and WiFi Applications
  
  Jeffrey Shealy, Akoustis Technologies
  
  Pinal Patel, Akoustis Technologies
  
  Michael D Hodge, Akoustis Technologies
  
  Mary Winters, Akoustis Technologies
  
  C. Moe, Akoustis Technologies
  
  J. Leathersich, Akoustis Technologies
  
  F. Bi, Akoustis Technologies
  
  D. Kim, Akoustis Technologies
  
  A. Kochhar, Akoustis Technologies
  
  E. Mehdizadeh, Akoustis Technologies
  
  Invited Presentation
  
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Mohata, D.

Global Communications
- May 11, 2022 // 5:30pm
  
  11.4 1E7 Hours MTTF At 200°C Of 100V RF AlGaN/GaN-SiC HEMT Through ALT Characterization
  
  Gabriele Formicone, Integra Technologies, Inc.
  
  J. Bell, Integra Technologies
  
  D. Hou, Global Communication Semiconductors, LLC
  
  S. Wang, Global Communication Semiconductors, Inc.
  
  D. Wang, Global Communication Semiconductors, Inc.
  
  J. Burger, Integra Technologies
  
  W. Cheng, Integra Technologies
  
  W. Fan, Momentive Technologies
  
  J. McKay, Global Communications
  
  D. Mohata, Global Communications
  
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Monaghan, F.

Swansea University, Swansea, UK
- May 12, 2022 // 3:20pm
  
  18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs
  
  Kevin Riddell, SPTS, Newport, UK
  
  A. Croot, SPTS, Newport, UK
  
  C. Bolton, SPTS, Newport, UK
  
  B. Jones, Swansea University, Swansea, UK
  
  F. Monaghan, Swansea University, Swansea, UK
  
  J. Mitchell, Swansea University, Swansea, UK
  
  M. R. Jennings, Swansea University, Swansea, UK
  
  O. J. Guy, Swansea University, Swansea, UK
  
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Mony, Sam

Skyworks Solution Inc.
- May 12, 2022 // 11:10am
  
  15.2 BiHEMT Idss Control for Yield Improvement
  
  Eric Finchem, MACOM
  
  Dylan Bartle, Skyworks Solutions Inc.
  
  Sam Mony, Skyworks Solution Inc.
  
  M. J. Miller, Skyworks Solutions Inc.
  
  S. Singh, Skyworks Solutions Inc.
  
  A. Chao, Skyworks Solutions Inc.
  
  A. Canlas, Skyworks Solutions Inc.
  
  E. Burke, Skyworks Solutions Inc.
  
  C. Munoz, Skyworks Solutions Inc.
  
  M. A. Zeeshan, Skyworks Solutions Inc.
  
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Mony, Samuel

Skyworks Solutions, Inc.
- May 12, 2022 // 3:20pm
  
  18.8 Solution-Phase Processed Zinc Oxide Vertical Schottky Diode using Flow-limited Field-Injection Electrostatic Spraying
  
  Samuel Mony, Skyworks Solutions, Inc.
  
  Jiang Li, Skyworks Solutions, Inc.
  
  Nercy Ebrahimi, Skyworks Solution Inc.
  
  Mohammadsadegh Beheshti, Skyworks Solutions Inc.
  
  Student Presentation
  
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- May 12, 2022 // 3:20pm
  
  18.9 Optimization in Noble Metal Hard Mask Selectivity in Chlorine-Based Plasma Etch
  
  Mohammadsadegh Beheshti, Skyworks Solutions Inc.
  
  Samuel Mony, Skyworks Solutions, Inc.
  
  Jiang Li, Skyworks Solutions, Inc.
  
  Nercy Ebrahimi, Skyworks Solution Inc.
  
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Moon, Jeong-Sun

HRL Laboratories, Malibu, CA,
- May 12, 2022 // 9:15am
  
  13.3 Highly-Linear and Efficient mm-Wave GaN HEMT Technology
  
  Jeong-Sun Moon, HRL Laboratories, Malibu, CA,
  
  Robert Grabar, HRL Laboratories, Malibu, CA,
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Joe Tai, HRL Laboratories, Malibu, CA,
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Patrick Fay, University of Notre Dame
  
  Joel Wong, HRL Laboratories, Malibu, CA,
  
  Didiel Vazquez-Morales, HRL Laboratories, Malibu, CA,
  
  Chuong Dao, HRL Laboratories, Malibu, CA,
  
  Shyam Bharadwaj, HRL Laboratories, Malibu, CA,
  
  Nivedhita Venkatesan, University of Notre Dame
  
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Moore, Tanya

X-Celeprint, Inc.
- May 11, 2022 // 4:20pm
  
  12.1 Micro-Transfer Printing for Micro-Assembly of Heterogeneous Integrated Compound Semiconductor Components
  
  David Gomez, X-Celeprint, Inc.
  
  Tanya Moore, X-Celeprint, Inc.
  
  Alin Fecioru, X-Celeprint, Ltd., Cork, Ireland
  
  Kevin Oswalt, X-Celeprint, Research
  
  James Thostenson, X-Celeprint, Research
  
  Chris Reyes, X-Celeprint, Research
  
  Ron Cok, X-Celeprint, Research
  
  Invited Presentation
  
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Mori, Y.

Osaka University
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Morikawa, Y.

Momentive Technologies
- May 12, 2022 // 3:20pm
  
  18.3 Heater Performance Improvement with Ceramic Coatings for GaN MOCVD Process
  
  T. Yamamoto, Momentive Technologies
  
  B. Kozak, Momentive Technologies
  
  Y. Morikawa, Momentive Technologies
  
  T. Higuchi, Momentive Technologies
  
  Y. Matsui, Momentive Technologies
  
  D. Sabens, Momentive Technologies
  
  P. Schmidt-Sane, Momentive Technologies
  
  J. lennartz, Momentive Technologies
  
  W. Fan, Momentive Technologies
  
  C. Chen, Momentive Technologies
  
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Moser A., Neil

Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
- May 11, 2022 // 11:40am
  
  8.3 Device Figure of Merit Performance of Scaled Gamma-Gate β-Ga2O3 MOSFETs
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Jeremiah Williams, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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- May 11, 2022 // 2:40pm
  
  10.3 Optimization of GaN RF Switch Device Performance using AFRL GaN140 MMIC Process
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  E. Werner, KBR, Wright-Patterson AFB
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Michael Schuette, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  John L. Ebel, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
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Mou, Shin

Air Force Research Laboratory, Wright Patterson AFB, OH
- May 12, 2022 // 2:30pm
  
  16.4 Delta Doping β-Ga2O3 Grown Via Plasma Assisted Molecular Beam Epitaxy Using Germanium
  
  Thaddeus Asel, Air Force Research Laboratory, Wright Patterson AFB, OH, USA
  
  Shin Mou, Air Force Research Laboratory, Wright Patterson AFB, OH
  
  Erich Steinbrunner, Air Force Research Laboratory, Wright Patterson AFB, OH, USA and Wright State University, Dayton, OH
  
  Jessica Hendricks, AFRL, Air Force Institute of Technology, Wright State University, Dayton, OH and Southwestern Ohio Council for Higher Education
  
  Adam T. Neal, Air Force Research Laboratory, Wright Patterson AFB, OH
  
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Munoz, C.

Skyworks Solutions Inc.
- May 12, 2022 // 11:10am
  
  15.2 BiHEMT Idss Control for Yield Improvement
  
  Eric Finchem, MACOM
  
  Dylan Bartle, Skyworks Solutions Inc.
  
  Sam Mony, Skyworks Solution Inc.
  
  M. J. Miller, Skyworks Solutions Inc.
  
  S. Singh, Skyworks Solutions Inc.
  
  A. Chao, Skyworks Solutions Inc.
  
  A. Canlas, Skyworks Solutions Inc.
  
  E. Burke, Skyworks Solutions Inc.
  
  C. Munoz, Skyworks Solutions Inc.
  
  M. A. Zeeshan, Skyworks Solutions Inc.
  
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Neal, Adam T.

Air Force Research Laboratory, Wright Patterson AFB, OH
- May 12, 2022 // 2:30pm
  
  16.4 Delta Doping β-Ga2O3 Grown Via Plasma Assisted Molecular Beam Epitaxy Using Germanium
  
  Thaddeus Asel, Air Force Research Laboratory, Wright Patterson AFB, OH, USA
  
  Shin Mou, Air Force Research Laboratory, Wright Patterson AFB, OH
  
  Erich Steinbrunner, Air Force Research Laboratory, Wright Patterson AFB, OH, USA and Wright State University, Dayton, OH
  
  Jessica Hendricks, AFRL, Air Force Institute of Technology, Wright State University, Dayton, OH and Southwestern Ohio Council for Higher Education
  
  Adam T. Neal, Air Force Research Laboratory, Wright Patterson AFB, OH
  
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Nguyen, D.

Semilab LEI, Lehighton, PA
- May 19, 2022 // 1:50pm
  
  17.2 Top Surface Edge Contact for Wafer Level Electrical Characterization of 2DEG in AlGaN/GaN on Semi-insulating Wafers
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  Bret Schrayer, Semilab SDI, Tampa, FL,
  
  Mark Benjamin, Lehighton Electronics Inc,
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
  Marshall Wilson, Semilab SDI, Tampa, FL,
  
  D. Nguyen, Semilab LEI, Lehighton, PA
  
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Nomoto, Kazuki

Cornell University
- May 11, 2022 // 11:10am
  
  8.2 How to Unleash Power of Ga2O3?
  
  Xing Huili-(Grace), Cornell University
  
  Wenshen Li, Cornell University
  
  Zongyang Hu, Cornell University
  
  Kazuki Nomoto, Cornell University
  
  Debdeep Jena, Cornell University
  
  Invited Presentation
  
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Novak, B.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Obeloer, Thomas

Element Six, Harwell, UK
- May 12, 2022 // 2:10pm
  
  16.3 Diamond Resistives – The Passive Way to Manage the Heat and Keep the VSWR Low at High Frequencies
  
  Firooz Faili, Element Six Technologies, Santa Clara, CA
  
  Thomas Obeloer, Element Six, Harwell, UK
  
  Daniel J. Twitchen, Element Six, Harwell, UK
  
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Odnoblyudov, Vlad

QROMIS, USA
- March 10, 2022 // 8:45am
  
  13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
  
  Cem Basceri, QROMIS, USA
  
  Vlad Odnoblyudov, QROMIS, USA
  
  O. Aktas, Sandia National Labs, Albuquerque, NM
  
  Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
  
  Karen Geens, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  D. Fahle, AIXTRON SE Germany
  
  Stefaan Decoutere, Imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  M. Heuken, AIXTRON SE Germany
  
  Invited Presentation
  
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Ohta, Hiroshi

Osaka University
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Okamoto, Naoya

Fujitsu Laboratories Ltd.
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Okayama, Yoshio

Panasonic Corporation
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Olsen, W.

University of California, Los Angeles, CA USA
- May 12, 2022 // 3:20pm
  
  18.6 Chemical Mechanical Polishing of β-Ga2O3
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  W. Olsen, University of California, Los Angeles, CA USA
  
  X. Huang, Argonne National Laboratory
  
  M. Wojcik, Argonne National Laboratory
  
  J. C. Gallagher, U.S. Naval Research Laboratory
  
  Y. Wang, University of California, Los Angeles, CA USA
  
  Student Presentation
  
  Abstract
  
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Oswalt, Kevin

X-Celeprint, Research
- May 11, 2022 // 4:20pm
  
  12.1 Micro-Transfer Printing for Micro-Assembly of Heterogeneous Integrated Compound Semiconductor Components
  
  David Gomez, X-Celeprint, Inc.
  
  Tanya Moore, X-Celeprint, Inc.
  
  Alin Fecioru, X-Celeprint, Ltd., Cork, Ireland
  
  Kevin Oswalt, X-Celeprint, Research
  
  James Thostenson, X-Celeprint, Research
  
  Chris Reyes, X-Celeprint, Research
  
  Ron Cok, X-Celeprint, Research
  
  Invited Presentation
  
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Otoki, Yohei

SCIOCS
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Pan, X.

Soitec
- May 12, 2022 // 3:20pm
  
  18.18 Reduction in Thermal Boundary Conductance of Annealed Direct Wafer Bonded GaN|Si Heterojunction Interfaces
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  V. Dragoi, EV Group
  
  Eric Guiot, SOITEC
  
  Raphael Caulmilone, SOITEC
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  X. Yan, University of California Irvine
  
  T. Pfeifer, University of Virginia Charlottesville
  
  N. Razek, EV Group and R-Ray Medical
  
  X. Pan, Soitec
  
  P. E. Hopkin, University of Virginia Charlottesville
  
  J. Tomko, University of Virginia Charlottesville
  
  Student Presentation
  
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Parizi, Saman

Qorvo, USA
- May 12, 2022 // 11:30am
  
  15.3 Characterization of Electrostatic Chuck (ESC) Performance with Changes in Wafer Warpage, and Backside Cooling Conditions
  
  Saman Parizi, Qorvo, USA
  
  Eleanor Rackoff, Qorvo, USA
  
  John Setty, Qorvo, USA
  
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Park, Myungsoo

Wavice Inc.,
- May 10, 2022 // 2:50pm
  
  3.3 3.8 GHz 20W Compact 2 stage GaN HEMT Power Amplifier using IPD on HPSI SiC substrate
  
  Jinman Jin, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Min Han, Wavice Inc.
  
  Myoungkeun Song, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Myungsoo Park, Wavice Inc.,
  
  Sangmin Lee, Wavice Inc.
  
  Hogeun Lee, Wavice Inc.,
  
  Inseop Kim, Wavice Inc.,
  
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Park, Yeongeun

Kumoh National Institute of Technology
- May 12, 2022 // 3:20pm
  
  18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process
  
  Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Sua Choi, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Hojun Lee, Pusan National University of Korea
  
  Jeehun Jeong, Pusan National University of Korea
  
  Student Presentation
  
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Parke, J.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Patel, Pinal

Akoustis Technologies
- May 11, 2022 // 1:40pm
  
  10.1 Single Crystal AlScN-on-Silicon XBAW RF Filter Technology for Wide Bandwidth, High Frequency 5G and WiFi Applications
  
  Jeffrey Shealy, Akoustis Technologies
  
  Pinal Patel, Akoustis Technologies
  
  Michael D Hodge, Akoustis Technologies
  
  Mary Winters, Akoustis Technologies
  
  C. Moe, Akoustis Technologies
  
  J. Leathersich, Akoustis Technologies
  
  F. Bi, Akoustis Technologies
  
  D. Kim, Akoustis Technologies
  
  A. Kochhar, Akoustis Technologies
  
  E. Mehdizadeh, Akoustis Technologies
  
  Invited Presentation
  
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Peach, Thomas

Cardiff University
- May 11, 2022 // 12:00pm
  
  7.4 Impact of Strain-Induced Bow on the Manufacture of VCSELs on 150mm GaAs- and Ge-Substrate Wafers
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Thomas Peach, Cardiff University
  
  Craig Allford, Cardiff University
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University. IQE plc
  
  Peter M. Smowton, Cardiff University, IQE plc
  
  Student Presentation
  
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Pelzel, Rodney

IQE, Cardiff, UK
- May 11, 2022 // 2:40pm
  
  9.3 First Demonstration Of High Performance 940nm VCSELs Grown On 200mm Diameter Substrates
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Andrew Clark, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  Rodney Pelzel, IQE, Cardiff, UK
  
  Wang Wang, IQE, Cardiff, UK
  
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Pezeshki, Bardia

AvicenaTech, Mountain View, CA
- May 11, 2022 // 11:10am
  
  7.2 Leveraging MicroLED Display Technology to Solve the Chip-to-Chip Data Communication Bottleneck
  
  Bardia Pezeshki, AvicenaTech, Mountain View, CA
  
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Pfeifer, T.

University of Virginia Charlottesville
- May 12, 2022 // 3:20pm
  
  18.18 Reduction in Thermal Boundary Conductance of Annealed Direct Wafer Bonded GaN|Si Heterojunction Interfaces
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  V. Dragoi, EV Group
  
  Eric Guiot, SOITEC
  
  Raphael Caulmilone, SOITEC
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  X. Yan, University of California Irvine
  
  T. Pfeifer, University of Virginia Charlottesville
  
  N. Razek, EV Group and R-Ray Medical
  
  X. Pan, Soitec
  
  P. E. Hopkin, University of Virginia Charlottesville
  
  J. Tomko, University of Virginia Charlottesville
  
  Student Presentation
  
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Pianfetti, Matthew

University of Illinois Urbana-Champagne
- May 12, 2022 // 3:20pm
  
  18.7 Role of Substrate on the Reverse Leakage Behavior of the Vertical GaN Devices
  
  Riley Vesto, University of Illinois at Urbana-Champaign
  
  Kyekyoon Kim, University of Illinois at Urbana-Champaign
  
  Matthew Pianfetti, University of Illinois Urbana-Champagne
  
  Luke Hartmann, University of Illinois Urbana-Champagne
  
  Rebekah Wilson, U.S, Army Construction Engineering Research Laboratory
  
  Hyungsoo Choi, University of Illinois Urbana-Champagne and Holonyak Micro and Nanotechnology Laboratory
  
  Student Presentation
  
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Pikul, Kevin P.

University of Illinois Urbana-Champagne
- May 11, 2022 // 3:20pm
  
  9.5 Impact of Diffusion Mask Strain on Impurity-Induced Disordered VCSELs Designed for Single-Fundamental-Mode Operation
  
  Patrick Su, University of Illinois at Urbana-Champaign
  
  John M Dallesasse, University of Illinois at Urbana-Champaign
  
  Mark Kraman, University of Illinois Urbana-Champagne
  
  Kevin P. Pikul, University of Illinois Urbana-Champagne
  
  Student Presentation
  
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Pomeroy, James

University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
- May 11, 2022 // 5:30pm
  
  12.4 Novel thermoreflectance-based method for in-situ die attach thermal conductivity assessment in packaged devices
  
  Zeina Abdallah, University of Bristol, Bristol, UK
  
  Nathawat Poopakdec, University of Bristol, Bristol, UK and Navaminda Kasatriyadhiraj Royal Air Force Academny
  
  Matin Kuball, University of Bristol, Bristol, UK,
  
  James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
  
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Pong, R.

COHERENT - INNOViON
- May 12, 2022 // 11:50am
  
  15.4 Ion Implantation Simulation and Optimization in Semiconductor Compounds
  
  J. A. Turcaud, COHERENT - INNOViON
  
  J. Schuur, COHERENT - INNOViON
  
  R. Pong, COHERENT - INNOViON
  
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Poopakdec, Nathawat

University of Bristol, Bristol, UK and Navaminda Kasatriyadhiraj Royal Air Force Academny
- May 11, 2022 // 5:30pm
  
  12.4 Novel thermoreflectance-based method for in-situ die attach thermal conductivity assessment in packaged devices
  
  Zeina Abdallah, University of Bristol, Bristol, UK
  
  Nathawat Poopakdec, University of Bristol, Bristol, UK and Navaminda Kasatriyadhiraj Royal Air Force Academny
  
  Matin Kuball, University of Bristol, Bristol, UK,
  
  James Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UK
  
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Puligadda, Rama

Brewer Science
- May 11, 2022 // 5:10pm
  
  12.3 A Novel Photosensitive Permanent Bonding Material Designed for Polymer/Metal Hybrid Bonding Applications
  
  Michele Fowler, Brewer Science
  
  Mei Dong, Brewer Science
  
  Alice Guerrero, Brewer Science
  
  Baron Huang, Brewer Science
  
  Rama Puligadda, Brewer Science
  
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Quay, Rudiger

Fraunhofer Institute for Applied Solid State Physics IAF
- May 10, 2022 // 3:10pm
  
  3.4 100-V GaN HEMT Technology with Record-High Efficiency at C-Band Frequencies
  
  Sabastian Krause, Fraunhofer Institute for Applied Solid State Physics IAF
  
  Peter Bruckner, Fraunhofer Institute for Applied Solid State Physics IAF
  
  Rudiger Quay, Fraunhofer Institute for Applied Solid State Physics IAF
  
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Rackoff, Eleanor

Qorvo, USA
- May 12, 2022 // 11:30am
  
  15.3 Characterization of Electrostatic Chuck (ESC) Performance with Changes in Wafer Warpage, and Backside Cooling Conditions
  
  Saman Parizi, Qorvo, USA
  
  Eleanor Rackoff, Qorvo, USA
  
  John Setty, Qorvo, USA
  
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Raring, James

Kyocera SLD
- May 11, 2022 // 1:40pm
  
  9.1 High-Power GaN-Based Laser Diodes for Next Generation Applications
  
  James Raring, Kyocera SLD
  
  Paul Rudy, Kyocera SLD
  
  Eric Goutain, Kyocera SLD
  
  Alex Sztein, Kyocera SLD
  
  Thiago Melo, Kyocera SLD
  
  Dennis Van Den Broeck, Kyocera SLD
  
  Changmin Lee, Kyocera SLD
  
  Invited Presentation
  
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Razek, N.

EV Group and R-Ray Medical
- May 12, 2022 // 3:20pm
  
  18.18 Reduction in Thermal Boundary Conductance of Annealed Direct Wafer Bonded GaN|Si Heterojunction Interfaces
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  V. Dragoi, EV Group
  
  Eric Guiot, SOITEC
  
  Raphael Caulmilone, SOITEC
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  X. Yan, University of California Irvine
  
  T. Pfeifer, University of Virginia Charlottesville
  
  N. Razek, EV Group and R-Ray Medical
  
  X. Pan, Soitec
  
  P. E. Hopkin, University of Virginia Charlottesville
  
  J. Tomko, University of Virginia Charlottesville
  
  Student Presentation
  
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Renaldo, K.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Reyes, Chris

X-Celeprint, Research
- May 11, 2022 // 4:20pm
  
  12.1 Micro-Transfer Printing for Micro-Assembly of Heterogeneous Integrated Compound Semiconductor Components
  
  David Gomez, X-Celeprint, Inc.
  
  Tanya Moore, X-Celeprint, Inc.
  
  Alin Fecioru, X-Celeprint, Ltd., Cork, Ireland
  
  Kevin Oswalt, X-Celeprint, Research
  
  James Thostenson, X-Celeprint, Research
  
  Chris Reyes, X-Celeprint, Research
  
  Ron Cok, X-Celeprint, Research
  
  Invited Presentation
  
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Riddell, Kevin

SPTS, Newport, UK
- May 12, 2022 // 3:20pm
  
  18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs
  
  Kevin Riddell, SPTS, Newport, UK
  
  A. Croot, SPTS, Newport, UK
  
  C. Bolton, SPTS, Newport, UK
  
  B. Jones, Swansea University, Swansea, UK
  
  F. Monaghan, Swansea University, Swansea, UK
  
  J. Mitchell, Swansea University, Swansea, UK
  
  M. R. Jennings, Swansea University, Swansea, UK
  
  O. J. Guy, Swansea University, Swansea, UK
  
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Rudy, Paul

Kyocera SLD
- May 11, 2022 // 1:40pm
  
  9.1 High-Power GaN-Based Laser Diodes for Next Generation Applications
  
  James Raring, Kyocera SLD
  
  Paul Rudy, Kyocera SLD
  
  Eric Goutain, Kyocera SLD
  
  Alex Sztein, Kyocera SLD
  
  Thiago Melo, Kyocera SLD
  
  Dennis Van Den Broeck, Kyocera SLD
  
  Changmin Lee, Kyocera SLD
  
  Invited Presentation
  
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Sabens, D.

Momentive Technologies
- May 12, 2022 // 3:20pm
  
  18.3 Heater Performance Improvement with Ceramic Coatings for GaN MOCVD Process
  
  T. Yamamoto, Momentive Technologies
  
  B. Kozak, Momentive Technologies
  
  Y. Morikawa, Momentive Technologies
  
  T. Higuchi, Momentive Technologies
  
  Y. Matsui, Momentive Technologies
  
  D. Sabens, Momentive Technologies
  
  P. Schmidt-Sane, Momentive Technologies
  
  J. lennartz, Momentive Technologies
  
  W. Fan, Momentive Technologies
  
  C. Chen, Momentive Technologies
  
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Schmidt-Sane, P.

Momentive Technologies
- May 12, 2022 // 3:20pm
  
  18.3 Heater Performance Improvement with Ceramic Coatings for GaN MOCVD Process
  
  T. Yamamoto, Momentive Technologies
  
  B. Kozak, Momentive Technologies
  
  Y. Morikawa, Momentive Technologies
  
  T. Higuchi, Momentive Technologies
  
  Y. Matsui, Momentive Technologies
  
  D. Sabens, Momentive Technologies
  
  P. Schmidt-Sane, Momentive Technologies
  
  J. lennartz, Momentive Technologies
  
  W. Fan, Momentive Technologies
  
  C. Chen, Momentive Technologies
  
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Schrayer, Bret

Semilab SDI, Tampa, FL,
- May 19, 2022 // 1:50pm
  
  17.2 Top Surface Edge Contact for Wafer Level Electrical Characterization of 2DEG in AlGaN/GaN on Semi-insulating Wafers
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  Bret Schrayer, Semilab SDI, Tampa, FL,
  
  Mark Benjamin, Lehighton Electronics Inc,
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
  Marshall Wilson, Semilab SDI, Tampa, FL,
  
  D. Nguyen, Semilab LEI, Lehighton, PA
  
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Schuette, Michael

Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
- May 11, 2022 // 2:40pm
  
  10.3 Optimization of GaN RF Switch Device Performance using AFRL GaN140 MMIC Process
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  E. Werner, KBR, Wright-Patterson AFB
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Michael Schuette, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  John L. Ebel, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
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Schuur, J.

COHERENT - INNOViON
- May 12, 2022 // 11:50am
  
  15.4 Ion Implantation Simulation and Optimization in Semiconductor Compounds
  
  J. A. Turcaud, COHERENT - INNOViON
  
  J. Schuur, COHERENT - INNOViON
  
  R. Pong, COHERENT - INNOViON
  
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Scimonelli, M.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Scott, C.

Northrop-Grumman SYNOPTICS, Charlotte, NC
- May 12, 2022 // 2:50pm
  
  16.5 Manufacturing Challenges of Czochralski Growth and Fabrication of 2-inch Semi-Insulating Beta Gallium Oxide Substrates
  
  John Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
  
  G. Foundos, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
  V, Gambin, Northrop-Grumman (AS), Redondo Beach, CA
  
  W. Everson, Penn State University, PA,
  
  C. Scott, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
  D. Synder, Penn State University
  
  A. Brady, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
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Seok, Ogyun

Kumoh National Institute of Technology, Republic of Korea
- May 12, 2022 // 3:20pm
  
  18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process
  
  Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Sua Choi, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Hojun Lee, Pusan National University of Korea
  
  Jeehun Jeong, Pusan National University of Korea
  
  Student Presentation
  
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Sepelak, Nicholas P.

KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
- May 10, 2022 // 4:50pm
  
  4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
  
  G. Cueva, MACOM
  
  E. Werner, KBR, Wright-Patterson AFB
  
  A. Islam, Air Force Research Laboratory
  
  N. Miller, Air Force Research Laboratory
  
  A. Crespo, Air Force Research Laboratory, Sensors Directorate
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  D. Walker Jr., Air Force Research Laboratory
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  R. Fitch, Air Force Research Laboratory
  
  K. Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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- May 11, 2022 // 11:40am
  
  8.3 Device Figure of Merit Performance of Scaled Gamma-Gate β-Ga2O3 MOSFETs
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Jeremiah Williams, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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Setty, John

Qorvo, USA
- May 12, 2022 // 11:30am
  
  15.3 Characterization of Electrostatic Chuck (ESC) Performance with Changes in Wafer Warpage, and Backside Cooling Conditions
  
  Saman Parizi, Qorvo, USA
  
  Eleanor Rackoff, Qorvo, USA
  
  John Setty, Qorvo, USA
  
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Shankar, B.

University of Bristol, Bristol, UK
- May 11, 2022 // 4:50pm
  
  11.2 Design and Manufacture of Edge Termination in Vertical GaN Diodes: Electric Field Distribution Probed by Second Harmonic Generation
  
  M.J. Uren, University of Bristol, Bristol, UK
  
  M. Kuball, University of Bristol, Bristol, UK
  
  B. Shankar, University of Bristol, Bristol, UK
  
  D. Ji, University of Bristol, Bristol, UK
  
  Y. Cao, University of Bristol, Bristol, UK
  
  Student Presentation
  
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Shao, Qinghui

2Lawrence Livermore National Laboratory, Livermore, CA
- May 12, 2022 // 3:20pm
  
  18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Ted Laurence, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Student Presentation
  
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Shealy, Jeffrey

Akoustis Technologies
- May 11, 2022 // 1:40pm
  
  10.1 Single Crystal AlScN-on-Silicon XBAW RF Filter Technology for Wide Bandwidth, High Frequency 5G and WiFi Applications
  
  Jeffrey Shealy, Akoustis Technologies
  
  Pinal Patel, Akoustis Technologies
  
  Michael D Hodge, Akoustis Technologies
  
  Mary Winters, Akoustis Technologies
  
  C. Moe, Akoustis Technologies
  
  J. Leathersich, Akoustis Technologies
  
  F. Bi, Akoustis Technologies
  
  D. Kim, Akoustis Technologies
  
  A. Kochhar, Akoustis Technologies
  
  E. Mehdizadeh, Akoustis Technologies
  
  Invited Presentation
  
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Sheehan, Chris

iBeam Materials, Santa Fe, NM,
- May 12, 2022 // 1:20pm
  
  16.1 Roll-to-roll Manufacturing of Epi-GaN Sheets on Metal Foil for LEDs and Transistor Devices
  
  Vladimir Matias, iBeam Materials, Santa Fe, NM,
  
  Chris Sheehan, iBeam Materials, Santa Fe, NM,
  
  Invited Presentation
  
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Shen, Shyh-Chiang

Georgia Institute of Technology, Atlanta, GA
- May 12, 2022 // 3:20pm
  
  18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Ted Laurence, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
  Student Presentation
  
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Shibata, Masatomo

SCIOCS
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Shin, Jai Kwang

Samsung Advanced Institute of Technology
- May 11, 2022 // 8:45am
  
  6.2 Technology and Future Perspectives of III-V Devices
  
  Woochul Jeon, Samsung Advanced Institute of Technology
  
  Jongseob Kim, Samsung Advanced Institute of Technology
  
  Kyungwook Hwang, Samsung Advanced Institute of Technology
  
  Sanghun Lee, Samsung Advanced Institute of Technology
  
  Jai Kwang Shin, Samsung Advanced Institute of Technology
  
  Yongsung Kim, Samsung Advanced Institute of Technology
  
  Jun Hee Choi, Samsung Advanced Institute of Technology
  
  Plenary Presentation
  
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Shiozaki, Koji

Nagoya University
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Shutts, Samuel

Cardiff University. IQE plc
- May 11, 2022 // 12:00pm
  
  7.4 Impact of Strain-Induced Bow on the Manufacture of VCSELs on 150mm GaAs- and Ge-Substrate Wafers
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Thomas Peach, Cardiff University
  
  Craig Allford, Cardiff University
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University. IQE plc
  
  Peter M. Smowton, Cardiff University, IQE plc
  
  Student Presentation
  
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Siddiqi, Georges

HRL Laboratories
- May 10, 2022 // 5:10pm
  
  4.4 Improving manufacturability of highly scaled RF GaN HEMTs
  
  Georges Siddiqi, HRL Laboratories
  
  Andrea Corrion, HRL Laboratories
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Michael Johnson, HRL Laboratories
  
  Dan Denninghoff, HRL Laboratories
  
  Joseph Nedy, HRL Laboratories
  
  Hannah Robinson, HRL Laboratories
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Haidang Tran, HRL Laboratories
  
  Quang Lam, HRL Laboratories
  
  Luis Fortin, HRL Laboratories
  
  Florian Herrault, HRL Laboratories
  
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Singh, S.

Skyworks Solutions Inc.
- May 12, 2022 // 11:10am
  
  15.2 BiHEMT Idss Control for Yield Improvement
  
  Eric Finchem, MACOM
  
  Dylan Bartle, Skyworks Solutions Inc.
  
  Sam Mony, Skyworks Solution Inc.
  
  M. J. Miller, Skyworks Solutions Inc.
  
  S. Singh, Skyworks Solutions Inc.
  
  A. Chao, Skyworks Solutions Inc.
  
  A. Canlas, Skyworks Solutions Inc.
  
  E. Burke, Skyworks Solutions Inc.
  
  C. Munoz, Skyworks Solutions Inc.
  
  M. A. Zeeshan, Skyworks Solutions Inc.
  
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Smorchkova, I.

Northrop Grumman (AS), Redondo Beach, CA, USA
- May 12, 2022 // 10:40am
  
  15.1 Overcoming Challenges in Advanced InP HEMT Manufacturing
  
  F. Lian, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  I. Smorchkova, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  X. B. Mci, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  H. Ma, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  W. R. Deal, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  W Yoshida, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  Invited Presentation
  
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Smowton, Peter M.

Cardiff University, IQE plc
- May 11, 2022 // 12:00pm
  
  7.4 Impact of Strain-Induced Bow on the Manufacture of VCSELs on 150mm GaAs- and Ge-Substrate Wafers
  
  Jack Baker, Cardiff University
  
  Sara Gillgrass, Cardiff University
  
  Thomas Peach, Cardiff University
  
  Craig Allford, Cardiff University
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  J. Iwan Davies, IQE plc
  
  Samuel Shutts, Cardiff University. IQE plc
  
  Peter M. Smowton, Cardiff University, IQE plc
  
  Student Presentation
  
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Snook, M.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Song, Myoungkeun

Wavice Inc.
- May 10, 2022 // 2:50pm
  
  3.3 3.8 GHz 20W Compact 2 stage GaN HEMT Power Amplifier using IPD on HPSI SiC substrate
  
  Jinman Jin, Wavice Inc.
  
  Byoungchul Jun, Wavice Inc.
  
  Chulsoon choi, Wavice Inc.
  
  Seokgyu Choi, Wavice Inc.
  
  Min Han, Wavice Inc.
  
  Myoungkeun Song, Wavice Inc.
  
  Jihun Kwon, Wavice Inc.
  
  Myungsoo Park, Wavice Inc.,
  
  Sangmin Lee, Wavice Inc.
  
  Hogeun Lee, Wavice Inc.,
  
  Inseop Kim, Wavice Inc.,
  
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Steinbrunner, Erich

Air Force Research Laboratory, Wright Patterson AFB, OH, USA and Wright State University, Dayton, OH
- May 12, 2022 // 2:30pm
  
  16.4 Delta Doping β-Ga2O3 Grown Via Plasma Assisted Molecular Beam Epitaxy Using Germanium
  
  Thaddeus Asel, Air Force Research Laboratory, Wright Patterson AFB, OH, USA
  
  Shin Mou, Air Force Research Laboratory, Wright Patterson AFB, OH
  
  Erich Steinbrunner, Air Force Research Laboratory, Wright Patterson AFB, OH, USA and Wright State University, Dayton, OH
  
  Jessica Hendricks, AFRL, Air Force Institute of Technology, Wright State University, Dayton, OH and Southwestern Ohio Council for Higher Education
  
  Adam T. Neal, Air Force Research Laboratory, Wright Patterson AFB, OH
  
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Su, Patrick

University of Illinois at Urbana-Champaign
- May 11, 2022 // 3:20pm
  
  9.5 Impact of Diffusion Mask Strain on Impurity-Induced Disordered VCSELs Designed for Single-Fundamental-Mode Operation
  
  Patrick Su, University of Illinois at Urbana-Champaign
  
  John M Dallesasse, University of Illinois at Urbana-Champaign
  
  Mark Kraman, University of Illinois Urbana-Champagne
  
  Kevin P. Pikul, University of Illinois Urbana-Champagne
  
  Student Presentation
  
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Synder, D.

Penn State University
- May 12, 2022 // 2:50pm
  
  16.5 Manufacturing Challenges of Czochralski Growth and Fabrication of 2-inch Semi-Insulating Beta Gallium Oxide Substrates
  
  John Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
  
  G. Foundos, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
  V, Gambin, Northrop-Grumman (AS), Redondo Beach, CA
  
  W. Everson, Penn State University, PA,
  
  C. Scott, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
  D. Synder, Penn State University
  
  A. Brady, Northrop-Grumman SYNOPTICS, Charlotte, NC
  
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Sztein, Alex

Kyocera SLD
- May 11, 2022 // 1:40pm
  
  9.1 High-Power GaN-Based Laser Diodes for Next Generation Applications
  
  James Raring, Kyocera SLD
  
  Paul Rudy, Kyocera SLD
  
  Eric Goutain, Kyocera SLD
  
  Alex Sztein, Kyocera SLD
  
  Thiago Melo, Kyocera SLD
  
  Dennis Van Den Broeck, Kyocera SLD
  
  Changmin Lee, Kyocera SLD
  
  Invited Presentation
  
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Tai, Joe

HRL Laboratories, Malibu, CA,
- May 12, 2022 // 9:15am
  
  13.3 Highly-Linear and Efficient mm-Wave GaN HEMT Technology
  
  Jeong-Sun Moon, HRL Laboratories, Malibu, CA,
  
  Robert Grabar, HRL Laboratories, Malibu, CA,
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Joe Tai, HRL Laboratories, Malibu, CA,
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Patrick Fay, University of Notre Dame
  
  Joel Wong, HRL Laboratories, Malibu, CA,
  
  Didiel Vazquez-Morales, HRL Laboratories, Malibu, CA,
  
  Chuong Dao, HRL Laboratories, Malibu, CA,
  
  Shyam Bharadwaj, HRL Laboratories, Malibu, CA,
  
  Nivedhita Venkatesan, University of Notre Dame
  
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Takino, Junichi

Panasonic Corporation
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Tamura, Satoshi

Panasonic Corporation
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Tang, Jinfeng

Eta Research
- May 12, 2022 // 3:20pm
  
  18.5 Warp of 4” Free-standing GaN Wafers
  
  Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
  
  Y. Yang, Global Communication Semiconductors, LLC
  
  Troy Baker, Eta Research
  
  Jinfeng Tang, Eta Research
  
  Yun Lai, Eta Research
  
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Thostenson, James

X-Celeprint, Research
- May 11, 2022 // 4:20pm
  
  12.1 Micro-Transfer Printing for Micro-Assembly of Heterogeneous Integrated Compound Semiconductor Components
  
  David Gomez, X-Celeprint, Inc.
  
  Tanya Moore, X-Celeprint, Inc.
  
  Alin Fecioru, X-Celeprint, Ltd., Cork, Ireland
  
  Kevin Oswalt, X-Celeprint, Research
  
  James Thostenson, X-Celeprint, Research
  
  Chris Reyes, X-Celeprint, Research
  
  Ron Cok, X-Celeprint, Research
  
  Invited Presentation
  
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Tomko, J.

University of Virginia Charlottesville
- May 12, 2022 // 3:20pm
  
  18.18 Reduction in Thermal Boundary Conductance of Annealed Direct Wafer Bonded GaN|Si Heterojunction Interfaces
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  V. Dragoi, EV Group
  
  Eric Guiot, SOITEC
  
  Raphael Caulmilone, SOITEC
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  X. Yan, University of California Irvine
  
  T. Pfeifer, University of Virginia Charlottesville
  
  N. Razek, EV Group and R-Ray Medical
  
  X. Pan, Soitec
  
  P. E. Hopkin, University of Virginia Charlottesville
  
  J. Tomko, University of Virginia Charlottesville
  
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Treidel, Eldad Bahat

Ferdinand-Braun-Institut, Berlin, Germany
- May 12, 2022 // 11:10am
  
  14.2 Areal Vertical-Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN-Based Devices
  
  Eldad Bahat Treidel, Ferdinand-Braun-Institut, Berlin, Germany
  
  Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
  
  Oliver Hilt, Ferdinand-Braun-Institut, Berlin, Germany
  
  Joachim Würfl, Ferdinand-Braun-Institut, Berlin, Germany
  
  Mihaela Wolf, Ferdinand-Braun-Institut, Berlin, Germany
  
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Troadec, C.

Yole Developpement, France
- May 10, 2022 // 12:00pm – 12:19pm
  
  1.6 Thrilling Compound Semiconductor Business Opportunities in China
  
  P. Chiu, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  T. Ayari, Yole Developpement, France
  
  C. Troadec, Yole Developpement, France
  
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- May 11, 2022 // 12:00pm
  
  8.4 Rise and Rise of SiC and GaN in Power Electronic Industry
  
  C. Troadec, Yole Developpement, France
  
  P. Chiu, Yole Developpement, France
  
  T. Ayari, Yole Developpement, France
  
  E. Dogmus, Yole Developpement, France
  
  R. Della-Giustina, Yole Developpement, France
  
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Troadec, Claire

Yole Developpement
- March 11, 2022 // 10:40am
  
  7.1 MicroLED Display: Technology and Applications Status
  
  Eric Virey, Yole Développement
  
  Zine Bouhamri, Yole Développement
  
  Claire Troadec, Yole Developpement
  
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Tsai, Chia-Jung

National Central University
- May 12, 2022 // 11:50am
  
  14.4 A PNP-GaN Gate AlGaN/GaN HEMT with Improved Gate Characteristics
  
  Meng-Hsuan Tsai, National Central University
  
  Chia-Jung Tsai, National Central University
  
  Xin-Rong You, National Central University
  
  Yue-Ming Hsin, National Central University
  
  Student Presentation
  
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Tsai, Meng-Hsuan

National Central University
- May 12, 2022 // 11:50am
  
  14.4 A PNP-GaN Gate AlGaN/GaN HEMT with Improved Gate Characteristics
  
  Meng-Hsuan Tsai, National Central University
  
  Chia-Jung Tsai, National Central University
  
  Xin-Rong You, National Central University
  
  Yue-Ming Hsin, National Central University
  
  Student Presentation
  
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Tsai, Mingwei

WIN semiconductors
- May 11, 2022 // 11:40am
  
  7.3 Reliability Assessment of 940 nm VCSEL Array based on Pulsed Mode Thermal Analysis
  
  Mingwei Tsai, WIN semiconductors
  
  Yin-Hsiang Lin, WIN Semiconductors Corp.
  
  Chun-Tse Chang, WIN Semiconductors Corp.
  
  Kai-Lun Chi, WIN Semiconductors Corp.
  
  Lap-Sum Yip, WIN Semiconductors Corp.
  
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Tsai, Shu-Hsiao

WIN Semiconductors Corp
- May 10, 2022 // 4:00pm
  
  5.1 III-V Semiconductor Devices on 6-inch Wafer for sub-Terahertz Communications
  
  Jung-Tao Chung, WIN Semiconducotrs Corp
  
  Yu-An Liao, WIN Semiconductors Corp.
  
  Jung-Hao Hsu, WIN Semiconductors Corp.
  
  Hsi-Tsung Lin, WIN Semiconductors Corp.
  
  Shu-Hsiao Tsai, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp.
  
  Lung-Yi Tseng, WIN Semiconductors Corp.
  
  Chia-Ming Chang, WIN Semiconductors Corp.
  
  Invited Presentation
  
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Tseng, Lung-Yi

WIN Semiconductors Corp.
- May 10, 2022 // 4:00pm
  
  5.1 III-V Semiconductor Devices on 6-inch Wafer for sub-Terahertz Communications
  
  Jung-Tao Chung, WIN Semiconducotrs Corp
  
  Yu-An Liao, WIN Semiconductors Corp.
  
  Jung-Hao Hsu, WIN Semiconductors Corp.
  
  Hsi-Tsung Lin, WIN Semiconductors Corp.
  
  Shu-Hsiao Tsai, WIN Semiconductors Corp
  
  Cheng-Kuo Lin, WIN Semiconductors Corp.
  
  Lung-Yi Tseng, WIN Semiconductors Corp.
  
  Chia-Ming Chang, WIN Semiconductors Corp.
  
  Invited Presentation
  
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Turcaud, J. A.

COHERENT - INNOViON
- May 12, 2022 // 11:50am
  
  15.4 Ion Implantation Simulation and Optimization in Semiconductor Compounds
  
  J. A. Turcaud, COHERENT - INNOViON
  
  J. Schuur, COHERENT - INNOViON
  
  R. Pong, COHERENT - INNOViON
  
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Uren, M.J.

University of Bristol, Bristol, UK
- May 11, 2022 // 4:50pm
  
  11.2 Design and Manufacture of Edge Termination in Vertical GaN Diodes: Electric Field Distribution Probed by Second Harmonic Generation
  
  M.J. Uren, University of Bristol, Bristol, UK
  
  M. Kuball, University of Bristol, Bristol, UK
  
  B. Shankar, University of Bristol, Bristol, UK
  
  D. Ji, University of Bristol, Bristol, UK
  
  Y. Cao, University of Bristol, Bristol, UK
  
  Student Presentation
  
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Van Den Broeck, Dennis

Kyocera SLD
- May 11, 2022 // 1:40pm
  
  9.1 High-Power GaN-Based Laser Diodes for Next Generation Applications
  
  James Raring, Kyocera SLD
  
  Paul Rudy, Kyocera SLD
  
  Eric Goutain, Kyocera SLD
  
  Alex Sztein, Kyocera SLD
  
  Thiago Melo, Kyocera SLD
  
  Dennis Van Den Broeck, Kyocera SLD
  
  Changmin Lee, Kyocera SLD
  
  Invited Presentation
  
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Vazquez-Morales, Didiel

HRL Laboratories, Malibu, CA,
- May 12, 2022 // 9:15am
  
  13.3 Highly-Linear and Efficient mm-Wave GaN HEMT Technology
  
  Jeong-Sun Moon, HRL Laboratories, Malibu, CA,
  
  Robert Grabar, HRL Laboratories, Malibu, CA,
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Joe Tai, HRL Laboratories, Malibu, CA,
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Patrick Fay, University of Notre Dame
  
  Joel Wong, HRL Laboratories, Malibu, CA,
  
  Didiel Vazquez-Morales, HRL Laboratories, Malibu, CA,
  
  Chuong Dao, HRL Laboratories, Malibu, CA,
  
  Shyam Bharadwaj, HRL Laboratories, Malibu, CA,
  
  Nivedhita Venkatesan, University of Notre Dame
  
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Veliadis, Victor

PowerAmerica
- May 11, 2022 // 10:40am
  
  8.1 SiC Device Manufacturing and Road to Volume Production
  
  Victor Veliadis, PowerAmerica
  
  Invited Presentation
  
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Venkatesan, Nivedhita

University of Notre Dame
- May 12, 2022 // 9:15am
  
  13.3 Highly-Linear and Efficient mm-Wave GaN HEMT Technology
  
  Jeong-Sun Moon, HRL Laboratories, Malibu, CA,
  
  Robert Grabar, HRL Laboratories, Malibu, CA,
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Joe Tai, HRL Laboratories, Malibu, CA,
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Patrick Fay, University of Notre Dame
  
  Joel Wong, HRL Laboratories, Malibu, CA,
  
  Didiel Vazquez-Morales, HRL Laboratories, Malibu, CA,
  
  Chuong Dao, HRL Laboratories, Malibu, CA,
  
  Shyam Bharadwaj, HRL Laboratories, Malibu, CA,
  
  Nivedhita Venkatesan, University of Notre Dame
  
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Verheijen, Bas

Nexperia. Manchester, UK
- May 12, 2022 // 2:30pm
  
  17.4 Clip bonded CCPAK-1212: Engineering the next generation GaN products
  
  Serge Karboyan, Nexperia. Manchester, UK
  
  Adam Brown, Nexperia. Manchester, UK
  
  Bas Verheijen, Nexperia. Manchester, UK
  
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Vesto, Riley

University of Illinois at Urbana-Champaign
- May 12, 2022 // 3:20pm
  
  18.7 Role of Substrate on the Reverse Leakage Behavior of the Vertical GaN Devices
  
  Riley Vesto, University of Illinois at Urbana-Champaign
  
  Kyekyoon Kim, University of Illinois at Urbana-Champaign
  
  Matthew Pianfetti, University of Illinois Urbana-Champagne
  
  Luke Hartmann, University of Illinois Urbana-Champagne
  
  Rebekah Wilson, U.S, Army Construction Engineering Research Laboratory
  
  Hyungsoo Choi, University of Illinois Urbana-Champagne and Holonyak Micro and Nanotechnology Laboratory
  
  Student Presentation
  
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Virey, Eric

Yole Développement
- March 11, 2022 // 10:40am
  
  7.1 MicroLED Display: Technology and Applications Status
  
  Eric Virey, Yole Développement
  
  Zine Bouhamri, Yole Développement
  
  Claire Troadec, Yole Developpement
  
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Vohra, A.

imec, Leuven, Belgium
- March 10, 2022 // 8:45am
  
  13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
  
  Cem Basceri, QROMIS, USA
  
  Vlad Odnoblyudov, QROMIS, USA
  
  O. Aktas, Sandia National Labs, Albuquerque, NM
  
  Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
  
  Karen Geens, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  D. Fahle, AIXTRON SE Germany
  
  Stefaan Decoutere, Imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  M. Heuken, AIXTRON SE Germany
  
  Invited Presentation
  
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Wach, Filip

University of Bristol
- May 11, 2022 // 4:50pm
  
  12.2 Differences in SiC Wafer Thermal Conductivity from Face-to-Face Dependent on Polishing
  
  Daniel Field, University of Bristol
  
  Martin Kuball, University of Bristol
  
  Filip Wach, University of Bristol
  
  Student Presentation
  
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Waduge, Pradeep

Macom Technology Solutions
- May 12, 2022 // 3:20pm
  
  18.2 Reduced Metal Spits in E-beam Metal Evaporation via Improved Crucible Liner-Hearth Power Dissipation
  
  Pradeep Waduge, Macom Technology Solutions
  
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Walker, Dennis

Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
- May 11, 2022 // 11:40am
  
  8.3 Device Figure of Merit Performance of Scaled Gamma-Gate β-Ga2O3 MOSFETs
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Jeremiah Williams, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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Walker Jr., D.

Air Force Research Laboratory
- May 10, 2022 // 4:50pm
  
  4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
  
  G. Cueva, MACOM
  
  E. Werner, KBR, Wright-Patterson AFB
  
  A. Islam, Air Force Research Laboratory
  
  N. Miller, Air Force Research Laboratory
  
  A. Crespo, Air Force Research Laboratory, Sensors Directorate
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  D. Walker Jr., Air Force Research Laboratory
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  R. Fitch, Air Force Research Laboratory
  
  K. Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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Walker Jr., Dennis E.

Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
- May 11, 2022 // 2:40pm
  
  10.3 Optimization of GaN RF Switch Device Performance using AFRL GaN140 MMIC Process
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  E. Werner, KBR, Wright-Patterson AFB
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Michael Schuette, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  John L. Ebel, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
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Wang, D.

Global Communication Semiconductors, Inc.
- May 11, 2022 // 5:30pm
  
  11.4 1E7 Hours MTTF At 200°C Of 100V RF AlGaN/GaN-SiC HEMT Through ALT Characterization
  
  Gabriele Formicone, Integra Technologies, Inc.
  
  J. Bell, Integra Technologies
  
  D. Hou, Global Communication Semiconductors, LLC
  
  S. Wang, Global Communication Semiconductors, Inc.
  
  D. Wang, Global Communication Semiconductors, Inc.
  
  J. Burger, Integra Technologies
  
  W. Cheng, Integra Technologies
  
  W. Fan, Momentive Technologies
  
  J. McKay, Global Communications
  
  D. Mohata, Global Communications
  
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Wang, S.

Global Communication Semiconductors, Inc.
- May 11, 2022 // 5:30pm
  
  11.4 1E7 Hours MTTF At 200°C Of 100V RF AlGaN/GaN-SiC HEMT Through ALT Characterization
  
  Gabriele Formicone, Integra Technologies, Inc.
  
  J. Bell, Integra Technologies
  
  D. Hou, Global Communication Semiconductors, LLC
  
  S. Wang, Global Communication Semiconductors, Inc.
  
  D. Wang, Global Communication Semiconductors, Inc.
  
  J. Burger, Integra Technologies
  
  W. Cheng, Integra Technologies
  
  W. Fan, Momentive Technologies
  
  J. McKay, Global Communications
  
  D. Mohata, Global Communications
  
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Wang, Wang

IQE, Cardiff, UK
- May 11, 2022 // 2:40pm
  
  9.3 First Demonstration Of High Performance 940nm VCSELs Grown On 200mm Diameter Substrates
  
  Andrew D. Johnson, IQE, Cardiff, UK
  
  Sung Wook Lim, IQE, Cardiff, UK
  
  Andrew Joel, IQE, Cardiff, UK
  
  Andrew Clark, IQE, Cardiff, UK
  
  Matthew Geen, IQE, Cardiff, UK
  
  Rodney Pelzel, IQE, Cardiff, UK
  
  Wang Wang, IQE, Cardiff, UK
  
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Wang, Y.

University of California, Los Angeles, CA USA
- May 12, 2022 // 3:20pm
  
  18.6 Chemical Mechanical Polishing of β-Ga2O3
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  W. Olsen, University of California, Los Angeles, CA USA
  
  X. Huang, Argonne National Laboratory
  
  M. Wojcik, Argonne National Laboratory
  
  J. C. Gallagher, U.S. Naval Research Laboratory
  
  Y. Wang, University of California, Los Angeles, CA USA
  
  Student Presentation
  
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Watanabe, Keiji

Fujitsu Laboratories Ltd.
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Wathuthanthri, I.

Northrop Grumman (MS), Linthicum, MD
- May 11, 2022 // 5:10pm
  
  11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology
  
  Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
  
  R. Lewis, Northrop Grumman (MS), Linthicum, MD
  
  J. Mason, Northrop Grumman (MS), Linthicum, MD
  
  M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
  
  M. Snook, Northrop Grumman (MS), Linthicum, MD
  
  J. Parke, Northrop Grumman (MS), Linthicum, MD
  
  K. Renaldo, Northrop Grumman (MS), Linthicum, MD
  
  M. Lee, Northrop Grumman (MS), Linthicum, MD
  
  Robert Howell, Northrop Grumman Corporation
  
  I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
  
  J. Daubert, Northrop Grumman (MS), Linthicum, MD
  
  J. Kelliher, Northrop Grumman (MS), Linthicum, MD
  
  N. Edwards, Northrop Grumman (MS), Linthicum, MD
  
  B. Alt, Northrop Grumman (MS), Linthicum, MD
  
  J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
  
  A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
  
  B. Novak, Northrop Grumman (MS), Linthicum, MD
  
  J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
  
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Wellman, Scott

Puritan Medical Products, Guilford, ME
- May 12, 2022 // 1:20pm
  
  17.1 Manufacturing Expansion of COVID-19 Foam Testing Swabs
  
  John Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
  
  Scott Wellman, Puritan Medical Products, Guilford, ME
  
  Invited Presentation
  
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Werner, E.

KBR, Wright-Patterson AFB
- May 10, 2022 // 4:50pm
  
  4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
  
  G. Cueva, MACOM
  
  E. Werner, KBR, Wright-Patterson AFB
  
  A. Islam, Air Force Research Laboratory
  
  N. Miller, Air Force Research Laboratory
  
  A. Crespo, Air Force Research Laboratory, Sensors Directorate
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  D. Walker Jr., Air Force Research Laboratory
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  R. Fitch, Air Force Research Laboratory
  
  K. Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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- May 11, 2022 // 2:40pm
  
  10.3 Optimization of GaN RF Switch Device Performance using AFRL GaN140 MMIC Process
  
  Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
  
  E. Werner, KBR, Wright-Patterson AFB
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Michael Schuette, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  John L. Ebel, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
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Williams, Jeremiah

Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
- May 11, 2022 // 11:40am
  
  8.3 Device Figure of Merit Performance of Scaled Gamma-Gate β-Ga2O3 MOSFETs
  
  Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Jeremiah Williams, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
  
  Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
  
  Andrew Green, Air Force Research Laboratory, Sensors Directorate
  
  Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
  Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
  
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Williams, Oliver

Cardiff University, Cardiff, UK
- May 12, 2022 // 3:20pm
  
  18.12 GaN-on-Si Membranes for Power Device Applications: Stress Evolution throughout Fabrication
  
  Jerome Cuenca, Cardiff University, Cardiff, UK
  
  Oliver Williams, Cardiff University, Cardiff, UK
  
  Matin Kuball, University of Bristol, Bristol, UK,
  
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Wilson, Marshall

Semilab SDI, Tampa, FL,
- May 19, 2022 // 1:50pm
  
  17.2 Top Surface Edge Contact for Wafer Level Electrical Characterization of 2DEG in AlGaN/GaN on Semi-insulating Wafers
  
  Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
  
  Bret Schrayer, Semilab SDI, Tampa, FL,
  
  Mark Benjamin, Lehighton Electronics Inc,
  
  Jacek Lagowski, Semilab SDI, Tampa, FL,
  
  Marshall Wilson, Semilab SDI, Tampa, FL,
  
  D. Nguyen, Semilab LEI, Lehighton, PA
  
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Wilson, Rebekah

U.S, Army Construction Engineering Research Laboratory
- May 12, 2022 // 3:20pm
  
  18.7 Role of Substrate on the Reverse Leakage Behavior of the Vertical GaN Devices
  
  Riley Vesto, University of Illinois at Urbana-Champaign
  
  Kyekyoon Kim, University of Illinois at Urbana-Champaign
  
  Matthew Pianfetti, University of Illinois Urbana-Champagne
  
  Luke Hartmann, University of Illinois Urbana-Champagne
  
  Rebekah Wilson, U.S, Army Construction Engineering Research Laboratory
  
  Hyungsoo Choi, University of Illinois Urbana-Champagne and Holonyak Micro and Nanotechnology Laboratory
  
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Winters, Mary

Akoustis Technologies
- May 11, 2022 // 1:40pm
  
  10.1 Single Crystal AlScN-on-Silicon XBAW RF Filter Technology for Wide Bandwidth, High Frequency 5G and WiFi Applications
  
  Jeffrey Shealy, Akoustis Technologies
  
  Pinal Patel, Akoustis Technologies
  
  Michael D Hodge, Akoustis Technologies
  
  Mary Winters, Akoustis Technologies
  
  C. Moe, Akoustis Technologies
  
  J. Leathersich, Akoustis Technologies
  
  F. Bi, Akoustis Technologies
  
  D. Kim, Akoustis Technologies
  
  A. Kochhar, Akoustis Technologies
  
  E. Mehdizadeh, Akoustis Technologies
  
  Invited Presentation
  
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Withey, Andrew

Nexperia Newport Wafer Fab, Newport, UK
- May 12, 2022 // 11:30am
  
  14.3 Dynamic Ron in AlGaN/GaN Structure with Different Layer Thickness
  
  Hyun-Seop Kim, University of Bristol, Bristol, UK
  
  Hassan Hirshy, IQE, Cardiff, UK
  
  Andrew Withey, Nexperia Newport Wafer Fab, Newport, UK
  
  Robert Harper, Compound Semiconductor Centre, Cardiff, UK
  
  Sam Evans, Nexperia Newport Wafer Fab, Newport, UK
  
  Matin Kuball, University of Bristol, Bristol, UK,
  
  Michael J Uren, University of Bristol, Bristol, UK
  
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Wohlmuth, Walter

Vanguard International Semiconductor Corporation, Taiwan
- March 10, 2022 // 8:45am
  
  13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
  
  Cem Basceri, QROMIS, USA
  
  Vlad Odnoblyudov, QROMIS, USA
  
  O. Aktas, Sandia National Labs, Albuquerque, NM
  
  Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
  
  Karen Geens, imec, Leuven, Belgium
  
  Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
  
  H. Hahn, AIXTRON SE, Herzogenrath, Germany
  
  D. Fahle, AIXTRON SE Germany
  
  Stefaan Decoutere, Imec, Leuven, Belgium
  
  A. Vohra, imec, Leuven, Belgium
  
  M. Heuken, AIXTRON SE Germany
  
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Wojcik, M.

Argonne National Laboratory
- May 12, 2022 // 3:20pm
  
  18.6 Chemical Mechanical Polishing of β-Ga2O3
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  W. Olsen, University of California, Los Angeles, CA USA
  
  X. Huang, Argonne National Laboratory
  
  M. Wojcik, Argonne National Laboratory
  
  J. C. Gallagher, U.S. Naval Research Laboratory
  
  Y. Wang, University of California, Los Angeles, CA USA
  
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Wolf, Mihaela

Ferdinand-Braun-Institut, Berlin, Germany
- May 12, 2022 // 11:10am
  
  14.2 Areal Vertical-Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN-Based Devices
  
  Eldad Bahat Treidel, Ferdinand-Braun-Institut, Berlin, Germany
  
  Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
  
  Oliver Hilt, Ferdinand-Braun-Institut, Berlin, Germany
  
  Joachim Würfl, Ferdinand-Braun-Institut, Berlin, Germany
  
  Mihaela Wolf, Ferdinand-Braun-Institut, Berlin, Germany
  
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Wong, Joel

HRL Laboratories, Malibu, CA,
- May 12, 2022 // 9:15am
  
  13.3 Highly-Linear and Efficient mm-Wave GaN HEMT Technology
  
  Jeong-Sun Moon, HRL Laboratories, Malibu, CA,
  
  Robert Grabar, HRL Laboratories, Malibu, CA,
  
  Erdem Arkun, HRL Laboratories, Malibu, CA,
  
  Joe Tai, HRL Laboratories, Malibu, CA,
  
  David Fanning, HRL Laboratories, Malibu, CA,
  
  Patrick Fay, University of Notre Dame
  
  Joel Wong, HRL Laboratories, Malibu, CA,
  
  Didiel Vazquez-Morales, HRL Laboratories, Malibu, CA,
  
  Chuong Dao, HRL Laboratories, Malibu, CA,
  
  Shyam Bharadwaj, HRL Laboratories, Malibu, CA,
  
  Nivedhita Venkatesan, University of Notre Dame
  
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Woodruff, S.

Northrop Grumman Electronic Systems
- May 10, 2022 // 10:30am – 10:59am
  
  1.3 Heterogeneous Heterostructures: A Path to Next Generation High Performance Compound Semiconductor Devices
  
  Thomas Kazior, DARPA, Microsystems Technology Office
  
  Gregory Jones, DARPA, Microsystems Technology Office
  
  S. Woodruff, Northrop Grumman Electronic Systems
  
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Wu, Barry

Keysight Technologies, Inc.
- May 10, 2022 // 4:30pm
  
  5.2 GaAsSb/InP DHBT Extrinsic Base Regrowth Using In-situ Hydrogen Plasma Surface Treatment and Molecular Beam Epitaxy
  
  Barry Wu, Keysight Technologies, Inc.
  
  Martin Dvorak, Keysight Technologies, Inc.
  
  Forest Huang, Keysight Technologies, Inc.
  
  Scott LaFrancois, Keysight Technologies, Inc.
  
  Mathias Bonse, Keysight Technologies, Inc.
  
  Evan Lobisser, Keysight Technologies, Inc.
  
  Masaya Iwamoto, Keysight Technologies, Inc.
  
  Ben Zaks, Keysight Technologies, Inc.
  
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Würfl, Joachim

Ferdinand-Braun-Institut, Berlin, Germany
- May 12, 2022 // 11:10am
  
  14.2 Areal Vertical-Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN-Based Devices
  
  Eldad Bahat Treidel, Ferdinand-Braun-Institut, Berlin, Germany
  
  Frank Brunner, Ferdinand-Braun-Institut, Berlin, Germany
  
  Oliver Hilt, Ferdinand-Braun-Institut, Berlin, Germany
  
  Joachim Würfl, Ferdinand-Braun-Institut, Berlin, Germany
  
  Mihaela Wolf, Ferdinand-Braun-Institut, Berlin, Germany
  
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Xiaohua, Ma

Xidian University, Xi'an, China
- May 10, 2022 // 4:50pm
  
  5.3 Normally-off InAlN/GaN HEMTs Fabricated by Atomic Layer Etching Gate Recess
  
  Siyu Liu, Xidian University, Xi'an, China
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
  Jiejie Zhu, Xidian University, Xi'an, China
  
  Minhan Mi, Xidian University
  
  Jingshu Guo, Xidian University, Xi'an, China
  
  Yue Hao, Xidian University, Xi'an, China
  
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- May 11, 2022 // 3:00pm
  
  10.4 AlN/GaN/InGaN Coupling Channel HEMTs with Improved SS Performance
  
  Yue Hao, Xidian University, Xi'an, China
  
  Hao Lu, Xidian University, Xi'an, China
  
  Bin Hou, Xidian University, Xi'an, China
  
  Ling Yang, Xidian University, Xi'an, China
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
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- May 19, 2022 // 2:10pm
  
  17.3 Regrown Ohmic contact of InAlN/GaN HEMTs based on MOCVD
  
  Jingshu Guo, Xidian University, Xi'an, China
  
  Jiejie Zhu, Xidian University, Xi'an, China
  
  Siyu Liu, Xidian University, Xi'an, China
  
  Jiahao Xu, Xidian University, Xi'an, China
  
  X. Zhao, Massachusetts Institute of Technology
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
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Xu, Jiahao

Xidian University, Xi'an, China
- May 19, 2022 // 2:10pm
  
  17.3 Regrown Ohmic contact of InAlN/GaN HEMTs based on MOCVD
  
  Jingshu Guo, Xidian University, Xi'an, China
  
  Jiejie Zhu, Xidian University, Xi'an, China
  
  Siyu Liu, Xidian University, Xi'an, China
  
  Jiahao Xu, Xidian University, Xi'an, China
  
  X. Zhao, Massachusetts Institute of Technology
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
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Xu, Zhiyu

Georgia Institute of Technology, Atlanta, GA
- May 12, 2022 // 3:20pm
  
  18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Ted Laurence, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
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Yamamoto, Masayoshi

Nagoya University
- May 12, 2022 // 10:40am
  
  14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems
  
  Yohei Otoki, SCIOCS
  
  Masatomo Shibata, SCIOCS
  
  Tomoyoshi Mishima, Osaka University
  
  Hiroshi Ohta, Osaka University
  
  Y. Mori, Osaka University
  
  Keiji Watanabe, Fujitsu Laboratories Ltd.
  
  Naoya Okamoto, Fujitsu Laboratories Ltd.
  
  Masayoshi Yamamoto, Nagoya University
  
  Koji Shiozaki, Nagoya University
  
  Satoshi Tamura, Panasonic Corporation
  
  Masayuki Imanishi, Osaka University
  
  Kazunori Kidera, Panasonic Corporation
  
  Junichi Takino, Panasonic Corporation
  
  Yoshio Okayama, Panasonic Corporation
  
  Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
  
  Hiroshi Amano, Nagoya University
  
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Yamamoto, T.

Momentive Technologies
- May 12, 2022 // 3:20pm
  
  18.3 Heater Performance Improvement with Ceramic Coatings for GaN MOCVD Process
  
  T. Yamamoto, Momentive Technologies
  
  B. Kozak, Momentive Technologies
  
  Y. Morikawa, Momentive Technologies
  
  T. Higuchi, Momentive Technologies
  
  Y. Matsui, Momentive Technologies
  
  D. Sabens, Momentive Technologies
  
  P. Schmidt-Sane, Momentive Technologies
  
  J. lennartz, Momentive Technologies
  
  W. Fan, Momentive Technologies
  
  C. Chen, Momentive Technologies
  
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Yan, X.

University of California Irvine
- May 12, 2022 // 3:20pm
  
  18.18 Reduction in Thermal Boundary Conductance of Annealed Direct Wafer Bonded GaN|Si Heterojunction Interfaces
  
  K. Huynh, University of California, Los Angeles, CA USA
  
  M. E. Liao, University of California, Los Angeles, CA USA
  
  V. Dragoi, EV Group
  
  Eric Guiot, SOITEC
  
  Raphael Caulmilone, SOITEC
  
  M.S. Goorsky, University of California, Los Angeles, CA USA
  
  X. Yan, University of California Irvine
  
  T. Pfeifer, University of Virginia Charlottesville
  
  N. Razek, EV Group and R-Ray Medical
  
  X. Pan, Soitec
  
  P. E. Hopkin, University of Virginia Charlottesville
  
  J. Tomko, University of Virginia Charlottesville
  
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Yang, Ling

Xidian University, Xi'an, China
- May 11, 2022 // 3:00pm
  
  10.4 AlN/GaN/InGaN Coupling Channel HEMTs with Improved SS Performance
  
  Yue Hao, Xidian University, Xi'an, China
  
  Hao Lu, Xidian University, Xi'an, China
  
  Bin Hou, Xidian University, Xi'an, China
  
  Ling Yang, Xidian University, Xi'an, China
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
  Student Presentation
  
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Yang, X.

MEC, BAE Systems, IQE
- May 12, 2022 // 3:20pm
  
  18.1 Polyimide Film Process Equipment Qualification
  
  Jose Diaz, BAE Systems Inc
  
  X. Yang, MEC, BAE Systems, IQE
  
  Amehayesus Gebreyohannes, BAE Systems
  
  Nitin Kalra, BAE Systems
  
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Yang, Y.

Global Communication Semiconductors, LLC
- May 12, 2022 // 3:20pm
  
  18.5 Warp of 4” Free-standing GaN Wafers
  
  Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
  
  Y. Yang, Global Communication Semiconductors, LLC
  
  Troy Baker, Eta Research
  
  Jinfeng Tang, Eta Research
  
  Yun Lai, Eta Research
  
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Yip, Lap-Sum

WIN Semiconductors Corp.
- May 11, 2022 // 11:40am
  
  7.3 Reliability Assessment of 940 nm VCSEL Array based on Pulsed Mode Thermal Analysis
  
  Mingwei Tsai, WIN semiconductors
  
  Yin-Hsiang Lin, WIN Semiconductors Corp.
  
  Chun-Tse Chang, WIN Semiconductors Corp.
  
  Kai-Lun Chi, WIN Semiconductors Corp.
  
  Lap-Sum Yip, WIN Semiconductors Corp.
  
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Yoo, Jae-Hyuck

Lawrence Livermore National Laboratory, Livermore, CA
- May 12, 2022 // 3:20pm
  
  18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown
  
  Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
  
  Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
  
  Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
  
  Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
  
  Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
  
  Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Ted Laurence, 2Lawrence Livermore National Laboratory, Livermore, CA
  
  Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
  
  Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
  
  Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
  
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Yoon, Hyowon

Kumoh National Institute of Technology
- May 12, 2022 // 3:20pm
  
  18.11 Prevention of 1.2 kV SiC MOSFET from Punch-through Phenomenon by Self-align Channel Process
  
  Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
  
  Hyowon Yoon, Kumoh National Institute of Technology
  
  Sua Choi, Kumoh National Institute of Technology
  
  Yeongeun Park, Kumoh National Institute of Technology
  
  Hojun Lee, Pusan National University of Korea
  
  Jeehun Jeong, Pusan National University of Korea
  
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Yoshida, W

Northrop Grumman (AS), Redondo Beach, CA, USA
- May 12, 2022 // 10:40am
  
  15.1 Overcoming Challenges in Advanced InP HEMT Manufacturing
  
  F. Lian, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  I. Smorchkova, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  X. B. Mci, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  H. Ma, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  W. R. Deal, Northrop Grumman (AS), Redondo Beach, CA, USA
  
  W Yoshida, Northrop Grumman (AS), Redondo Beach, CA, USA
  
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You, Xin-Rong

National Central University
- May 12, 2022 // 11:50am
  
  14.4 A PNP-GaN Gate AlGaN/GaN HEMT with Improved Gate Characteristics
  
  Meng-Hsuan Tsai, National Central University
  
  Chia-Jung Tsai, National Central University
  
  Xin-Rong You, National Central University
  
  Yue-Ming Hsin, National Central University
  
  Student Presentation
  
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Yuen, Al

Lumentum
- May 11, 2022 // 9:30am
  
  6.3 Foundry-based Optical Components Changing the World
  
  Al Yuen, Lumentum
  
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Zaks, Ben

Keysight Technologies, Inc.
- May 10, 2022 // 4:30pm
  
  5.2 GaAsSb/InP DHBT Extrinsic Base Regrowth Using In-situ Hydrogen Plasma Surface Treatment and Molecular Beam Epitaxy
  
  Barry Wu, Keysight Technologies, Inc.
  
  Martin Dvorak, Keysight Technologies, Inc.
  
  Forest Huang, Keysight Technologies, Inc.
  
  Scott LaFrancois, Keysight Technologies, Inc.
  
  Mathias Bonse, Keysight Technologies, Inc.
  
  Evan Lobisser, Keysight Technologies, Inc.
  
  Masaya Iwamoto, Keysight Technologies, Inc.
  
  Ben Zaks, Keysight Technologies, Inc.
  
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Zeeshan, M. A.

Skyworks Solutions Inc.
- May 12, 2022 // 11:10am
  
  15.2 BiHEMT Idss Control for Yield Improvement
  
  Eric Finchem, MACOM
  
  Dylan Bartle, Skyworks Solutions Inc.
  
  Sam Mony, Skyworks Solution Inc.
  
  M. J. Miller, Skyworks Solutions Inc.
  
  S. Singh, Skyworks Solutions Inc.
  
  A. Chao, Skyworks Solutions Inc.
  
  A. Canlas, Skyworks Solutions Inc.
  
  E. Burke, Skyworks Solutions Inc.
  
  C. Munoz, Skyworks Solutions Inc.
  
  M. A. Zeeshan, Skyworks Solutions Inc.
  
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Zhang, Ning

Oxford Instruments Plasma Technology
- May 11, 2022 // 3:00pm
  
  9.4 Etching of GaAs/AlGaAs VCSEL Mesa for High Volume Production
  
  Katie Hore, Oxford Instruments Plasma Technology
  
  Ning Zhang, Oxford Instruments Plasma Technology
  
  Stephanie Baclet, Oxford Instruments Plasma Technology
  
  Ligang Deng, Oxford Instruments Plasma Technology
  
  David Hooper, Oxford Instruments
  
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Zhao, X.

Massachusetts Institute of Technology
- May 19, 2022 // 2:10pm
  
  17.3 Regrown Ohmic contact of InAlN/GaN HEMTs based on MOCVD
  
  Jingshu Guo, Xidian University, Xi'an, China
  
  Jiejie Zhu, Xidian University, Xi'an, China
  
  Siyu Liu, Xidian University, Xi'an, China
  
  Jiahao Xu, Xidian University, Xi'an, China
  
  X. Zhao, Massachusetts Institute of Technology
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
  Student Presentation
  
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Zhou, Guoliang

Skyworks Solutions, Inc.
- May 10, 2022 // 5:10pm
  
  5.4 Effects of Deposition Rate, Beam Sweep and Crucible in an Evaporation Process
  
  Kezia Cheng, Skyworks Solutions Inc.
  
  Guoliang Zhou, Skyworks Solutions, Inc.
  
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Zhu, Jiejie

Xidian University, Xi'an, China
- May 10, 2022 // 4:50pm
  
  5.3 Normally-off InAlN/GaN HEMTs Fabricated by Atomic Layer Etching Gate Recess
  
  Siyu Liu, Xidian University, Xi'an, China
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
  Jiejie Zhu, Xidian University, Xi'an, China
  
  Minhan Mi, Xidian University
  
  Jingshu Guo, Xidian University, Xi'an, China
  
  Yue Hao, Xidian University, Xi'an, China
  
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- May 19, 2022 // 2:10pm
  
  17.3 Regrown Ohmic contact of InAlN/GaN HEMTs based on MOCVD
  
  Jingshu Guo, Xidian University, Xi'an, China
  
  Jiejie Zhu, Xidian University, Xi'an, China
  
  Siyu Liu, Xidian University, Xi'an, China
  
  Jiahao Xu, Xidian University, Xi'an, China
  
  X. Zhao, Massachusetts Institute of Technology
  
  Ma Xiaohua, Xidian University, Xi'an, China
  
  Student Presentation
  
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Zhu, Wen

BAE Systems Inc
- May 12, 2022 // 3:20pm
  
  18.14 GaN Wafer Level AuSn Solder Deposition Wen Zhu, Kanin Chu, and Blair Coburn BAE Systems, Nashua, NH USA
  
  Wen Zhu, BAE Systems Inc
  
  Kanin Chu, BAE Systems Inc
  
  Blair Coburn, BAE Systems
  
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Huili-(Grace) , Xing

8.2 How to Unleash Power of Ga2O3?

Abdallah, Zeina

12.4 Novel thermoreflectance-based method for in-situ die attach thermal conductivity assessment in packaged devices

Ahmed, S.

17.5 High-Temperature SiC Power Module with Integrated LTCC-Based Gate Driver

Aktas, O.

13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform

Allford, Craig

7.4 Impact of Strain-Induced Bow on the Manufacture of VCSELs on 150mm GaAs- and Ge-Substrate Wafers

Alt, B.

11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology

Amano, Hiroshi

14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems

Arkun, Erdem

4.4 Improving manufacturability of highly scaled RF GaN HEMTs

13.3 Highly-Linear and Efficient mm-Wave GaN HEMT Technology

Asel, Thaddeus

16.4 Delta Doping β-Ga2O3 Grown Via Plasma Assisted Molecular Beam Epitaxy Using Germanium

Ayari, T.

1.6 Thrilling Compound Semiconductor Business Opportunities in China

8.4 Rise and Rise of SiC and GaN in Power Electronic Industry

Baclet, Stephanie

9.4 Etching of GaAs/AlGaAs VCSEL Mesa for High Volume Production

Bahl, Sandeep

11.1 Achieving Application-reliable GaN using a Standardized Approach

Baker, Jack

7.4 Impact of Strain-Induced Bow on the Manufacture of VCSELs on 150mm GaAs- and Ge-Substrate Wafers

Baker, Troy

18.5 Warp of 4” Free-standing GaN Wafers

Bakeroot, Benoit

13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform

Bakhtiary Noodeh, Marzieh

18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown

Bartle, Dylan

15.2 BiHEMT Idss Control for Yield Improvement

Basceri, Cem

13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform

Beheshti, Mohammadsadegh

18.8 Solution-Phase Processed Zinc Oxide Vertical Schottky Diode using Flow-limited Field-Injection Electrostatic Spraying

18.9 Optimization in Noble Metal Hard Mask Selectivity in Chlorine-Based Plasma Etch

Bell, J.

11.4 1E7 Hours MTTF At 200°C Of 100V RF AlGaN/GaN-SiC HEMT Through ALT Characterization

Benjamin, Mark

17.2 Top Surface Edge Contact for Wafer Level Electrical Characterization of 2DEG in AlGaN/GaN on Semi-insulating Wafers

Bharadwaj, Shyam

13.3 Highly-Linear and Efficient mm-Wave GaN HEMT Technology

Bi, F.

10.1 Single Crystal AlScN-on-Silicon XBAW RF Filter Technology for Wide Bandwidth, High Frequency 5G and WiFi Applications

Blevins, John

16.5 Manufacturing Challenges of Czochralski Growth and Fabrication of 2-inch Semi-Insulating Beta Gallium Oxide Substrates

17.1 Manufacturing Expansion of COVID-19 Foam Testing Swabs

Bolton, C.

18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs

Bonse, Mathias

5.2 GaAsSb/InP DHBT Extrinsic Base Regrowth Using In-situ Hydrogen Plasma Surface Treatment and Molecular Beam Epitaxy

Bothwell, Bryan

10.2 COVID-19 Testing- A New Era In Detection

Bouhamri, Zine

7.1 MicroLED Display: Technology and Applications Status

Brady, A.

16.5 Manufacturing Challenges of Czochralski Growth and Fabrication of 2-inch Semi-Insulating Beta Gallium Oxide Substrates

Brown, Adam

17.4 Clip bonded CCPAK-1212: Engineering the next generation GaN products

Brunner, Frank

14.2 Areal Vertical-Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN-Based Devices

Burger, J.

11.4 1E7 Hours MTTF At 200°C Of 100V RF AlGaN/GaN-SiC HEMT Through ALT Characterization

Burke, E.

15.2 BiHEMT Idss Control for Yield Improvement

Canlas, A.

15.2 BiHEMT Idss Control for Yield Improvement

Cao, Y.

11.2 Design and Manufacture of Edge Termination in Vertical GaN Diodes: Electric Field Distribution Probed by Second Harmonic Generation

Caulmilone, Raphael

18.18 Reduction in Thermal Boundary Conductance of Annealed Direct Wafer Bonded GaN|Si Heterojunction Interfaces

Chabak, K.

4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab

Chabak, Kelson

8.3 Device Figure of Merit Performance of Scaled Gamma-Gate β-Ga2O3 MOSFETs